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    SURFACE MOUNT TRANSISTOR A103 Search Results

    SURFACE MOUNT TRANSISTOR A103 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SURFACE MOUNT TRANSISTOR A103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 1000 MHz A1031/ SMA1031 V3 Features • • • • Product Image HIGH EFFICIENCY: 36 mA at +5 Vdc LOW NOISE FIGURE: 2.7 dB TYP. HIGH GAIN, TWO STAGES: 28.5 dB (TYP.) MED OUTPUT POWER: +10 dBm (TYP.) Description The A1031RF amplifier is a discrete hybrid design, which uses


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    PDF A1031/ SMA1031 A1031RF MIL-STD-883 A1031 SMA1031rized

    Untitled

    Abstract: No abstract text available
    Text: A1031 / SMA1031 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features • • • • Product Image HIGH EFFICIENCY: 36 mA at +5 Vdc LOW NOISE FIGURE: 2.7 dB TYP. HIGH GAIN, TWO STAGES: 28.5 dB (TYP.) MED OUTPUT POWER: +10 dBm (TYP.) Description The A1031RF amplifier is a discrete hybrid design, which uses


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    PDF A1031 SMA1031 A1031RF MIL-STD-883

    Bipolar Integrated Technology

    Abstract: SMA1031 A1031 CA1031
    Text: A1031 / SMA1031 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features • • • • Product Image HIGH EFFICIENCY: 36 mA at +5 Vdc LOW NOISE FIGURE: 2.7 dB TYP. HIGH GAIN, TWO STAGES: 28.5 dB (TYP.) MED OUTPUT POWER: +10 dBm (TYP.) Description The A1031RF amplifier is a discrete hybrid design, which uses


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    PDF A1031 SMA1031 A1031RF MIL-STD-883 Bipolar Integrated Technology SMA1031 CA1031

    SMA1031

    Abstract: transistor a1031 A1031 CA1031 SMA-103
    Text: A1031/SMA1031 10 TO 1000 MHz CASCADABLE AMPLIFIER •HIGH EFFICIENCY: 36 mA at +5 Vdc ·LOW NOISE FIGURE: 2.7 dB TYP. ·HIGH GAIN, TWO STAGES: 28.5 dB (TYP.) ·MED OUTPUT POWER: +10 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/01)*


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    PDF A1031/SMA1031 A1031 SMA1031 CA1031 SMA1031 transistor a1031 A1031 CA1031 SMA-103

    transistor a1031

    Abstract: SMA1031 A1031 CA1031 3 w RF POWER TRANSISTOR 2.7 ghz
    Text: A1031/SMA1031 10 TO 1000 MHz CASCADABLE AMPLIFIER •HIGH EFFICIENCY: 36 mA at +5 Vdc ·LOW NOISE FIGURE: 2.7 dB TYP. ·HIGH GAIN, TWO STAGES: 28.5 dB (TYP.) ·MED OUTPUT POWER: +10 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/01)*


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    PDF A1031/SMA1031 A1031 SMA1031 CA1031 transistor a1031 SMA1031 A1031 CA1031 3 w RF POWER TRANSISTOR 2.7 ghz

    a103g

    Abstract: a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G UPA103G-E1
    Text: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE


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    PDF UPA103G UPA103G 2500/REEL A103G UPA103G-E1 34-6393/FAX a103g a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G-E1

    a103g

    Abstract: a103g transistors UPA103G UPA103G-E1
    Text: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE


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    PDF UPA103G UPA103G UPA103G-E1 24-Hour a103g a103g transistors UPA103G-E1

    E135458

    Abstract: CK 66 UL 94V-0 LCD CK 99 UL 94V-0 LCD operation and applications of 7490 Decade Counter HM 4953 ic 8pin lcd CK 66 UL 94V-0 SX460 diagram CK 77- 94V-0 cam Eagle signal LR26861 MCJR1S00
    Text: Variety: We have a broad selection of controllers to meet application requirements in a variety of industries. User-configurable, accurate and flexible, with low, mid, or high level performance ranges, our controller products meet your system and budgetary requirements.


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    relay 12vdc

    Abstract: eagle signal control HD32A622 BR15A601 relay 6vdc 30D3CA12002 BR18A601 30E3CD02402 BR15A6 dynapar ht50 DA211A6
    Text: 2005 Factory Automation & Feedback Controls Price List North America, Latin America & Asia Pacific Effective July 2, 2005 Revised 11/7/2005 Supersedes all previous issues • COUNTERS • TIMERS • PANEL METERS • TACHOMETERS and Other Devices Veeder-Root TM brand


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    PDF ISO9001 Jul/2005 relay 12vdc eagle signal control HD32A622 BR15A601 relay 6vdc 30D3CA12002 BR18A601 30E3CD02402 BR15A6 dynapar ht50 DA211A6

    PM55L-048

    Abstract: LW - 6052 Clock Display LED PM35L-048 PM35S-048 5 pin relay 12vdc 4088 UP 5035 LCD METER diagram wiring mitsubishi elevator digital dC Ammeter stu 4465 OMRON plc programming manual ZEN-10C1DR-D-V2
    Text: ND3% BASE1 XXXX7196-1888-1-P 1888 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 11:01 TS:TS date TS time PANEL INSTRUMENTATION Find Datasheets Online ANALOG 2% CENTURY PANEL METERS ROUND AND RECTANGULAR PANEL METERS Attractive, easy-to-read meters in black


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    PDF 55F5412 55F5413 55F5252 55F5253 55F5254 55F5255 55F5256 55F5257 SCE016XD3SU2B SCE028LD3DP2B PM55L-048 LW - 6052 Clock Display LED PM35L-048 PM35S-048 5 pin relay 12vdc 4088 UP 5035 LCD METER diagram wiring mitsubishi elevator digital dC Ammeter stu 4465 OMRON plc programming manual ZEN-10C1DR-D-V2

    MAAM-008863

    Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
    Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America


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    PDF 40W267 MAAM-008863 MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer

    2kW flyback PFC

    Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
    Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg


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    PDF D-90439 D-70499 D-81679 B-1060 N60S5 O-220 OT-223 2kW flyback PFC transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


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    heds 5310 encoder

    Abstract: heds 5310 Quadrature Encoder 333 cpr COLOR tv tube charger circuit diagrams heds 5300 encoder encoder heds 6310 schematic diagram igbt inverter welding machine HP HEDS 5300 AFBR-5715 ACPL-C87
    Text: Product Catalog 2014 Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect What’s Inside 4 Fiber Optic Solutions for Networking 14 Optical Components for Broadband Networking and Communication Applications 8 1 Industrial Fiber Optic Components,


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    PDF AV00-0265EN heds 5310 encoder heds 5310 Quadrature Encoder 333 cpr COLOR tv tube charger circuit diagrams heds 5300 encoder encoder heds 6310 schematic diagram igbt inverter welding machine HP HEDS 5300 AFBR-5715 ACPL-C87

    M38UC

    Abstract: Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400
    Text: M/A-COM, Inc. 1011 Pawtucket Blvd. Lowell, MA 01853-3295 RF and Microwave Products North America MSBU Component Operations Tel: 800.366.2266 Fax: 800.618.8883 Europe/Africa/Middle East Tel: 44.1344.869.595 Fax: 44.1344.300.020 Asia/Pacific Tel: 81.44.844.8296


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    PDF MA-C-05010007 M38UC Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400

    transistor 70603

    Abstract: 70603 a103 636 transistor 70603 scr JESD A114 A101 A102 A103 S/transistor 70603 JESD-22
    Text: SST Product Reliability Technical Paper 1.0 INTRODUCTION The SST quality policy is: To satisfy customer requirements by providing products and services that are cost effective, on schedule, and with zero nonconformances to specifications. SST is developing a quality system in accordance with


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    PDF ISO-9001 29EE020/29LE020/29VE020 29EE010/29LE010/29VE010 29EE512/29LE512/29VE512 transistor 70603 70603 a103 636 transistor 70603 scr JESD A114 A101 A102 A103 S/transistor 70603 JESD-22

    Untitled

    Abstract: No abstract text available
    Text: uuU A1031 / SMA1031 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH EFFICIENCY: 36 mA at +5 Vdc ♦ LOW NOISE FIGURE: 2.7 dB TYR ♦ HIGH GAIN, TWO STAGES: 28.5 dB (TYR) ♦ MED OUTPUT POWER: +10 dBm (TYP.) Outline Drawings


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    PDF A1031 SMA1031 A1031 50-ohm

    transistor b1184

    Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
    Text: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K


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    PDF 2SA1037AKLN V2SC41 2412K 3722K 4642K A1037AK 2411K B1197K 2SA1727 transistor b1184 B1474 C5072 C4938 b1184 transistor c4998 2SB1051 K2306 2sc4937

    a1037

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power


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    PDF uPA1700A a1037

    transistor ba 752

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­


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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power


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    PDF uPA1702

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR _j u P A 1 7 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect T ran­ in millimeter sistor designed for DC/DC converter and power man­


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    PDF uPA1700G

    A1035T

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 751 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion bat­


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    a1037

    Abstract: uA753
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 753 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: m illim eter This product is Dual N-Channel MOS Field Ef­ fect T ransistor designed for power m anagem ent


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    PDF