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    SURFACE MOUNT TRANSISTOR A4 Search Results

    SURFACE MOUNT TRANSISTOR A4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SURFACE MOUNT TRANSISTOR A4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ML2011

    Abstract: HSJ1636-011020 JACK3 2SC1815 pcb MOUNT JACK CONNECTOR headphone HSJ1636 2sc1815 transistor hrs connector 30 pin LM4922 QFN32
    Text: ML2011 reference board specification Revision A2 Date: 2006/06/19 ML2011 Reference board circuit diagram  Any surface mount transistor that can drive LED is OK.  Any surface mount LED is OK. DVDD Tr1 2SC1815 LED1 R4 10k ohm S1 DVDD ML2011 QFN32 5 TP1 connecter 50pins


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    PDF ML2011 2SC1815 ML2011 QFN32) 50pins LM4922 10pins -10DA-2 HSJ1636-011020 JACK3 2SC1815 pcb MOUNT JACK CONNECTOR headphone HSJ1636 2sc1815 transistor hrs connector 30 pin LM4922 QFN32

    CA45

    Abstract: SMA45 TRANSISTOR a45 BGA45
    Text: A45/SMA45 1000 TO 4000 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 17.5 dB TYP. · LOW NOISE: 4.5 dB (TYP.) · HIGH OUTPUT POWER: +19.5 dBm (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency


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    PDF A45/SMA45 SMA45 CA45 SMA45 TRANSISTOR a45 BGA45

    A4011

    Abstract: CA4011 SMA4011
    Text: A4011/SMA4011 1000 TO 4000 MHz TO-8 CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 2.0 dB TYP. · MEDIUM OUTPUT POWER: +18.3 dBm (TYP.) · HIGH EFFICIENCY: 65 mA (TYP.) @ +5 Vdc · PHEMT AMPLIFIER Typical Performance @ 25°C Specifications (Rev. Date: 6/01)*


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    PDF A4011/SMA4011 A4011 SMA4011 CA4011 A4011 CA4011 SMA4011

    TRANSISTOR a43

    Abstract: CA43 SMA43
    Text: A43/SMA43 100 TO 3200 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 100-3200 MHz · EXCELLENT GAIN BLOCK: 11.5 dB TYP. · MEDIUM OUTPUT LEVEL: +8.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency


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    PDF A43/SMA43 SMA43 TRANSISTOR a43 CA43 SMA43

    A4012

    Abstract: CA4012 SMA4012 TRANSISTOR 24C
    Text: A4012/SMA4012 1.0 TO 4.0 GHz TO-8 CASCADABLE AMPLIFIER • WIDE BANDWIDTH: 1.0 TO 4.0 GHz · HIGH GAIN: 18 dB TYP. · MEDIUM OUTPUT POWER: +15.5 dBm (TYP.) · LOW NOISE FIGURE: 3.5 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/02)* Characteristics


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    PDF A4012/SMA4012 A4012 SMA4012 CA4012 A4012 CA4012 SMA4012 TRANSISTOR 24C

    A4011

    Abstract: CA4011 SMA4011
    Text: A4011/SMA4011 1000 TO 4000 MHz TO-8 CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 2.0 dB TYP. · MEDIUM OUTPUT POWER: +18.3 dBm (TYP.) · HIGH EFFICIENCY: 65 mA (TYP.) @ +5 Vdc · PHEMT AMPLIFIER Typical Performance @ 25°C Specifications (Rev. Date: 2/02)*


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    PDF A4011/SMA4011 A4011 SMA4011 CA4011 A4011 CA4011 SMA4011

    5-146281-4

    Abstract: A411 CA411 SMA411
    Text: A411/SMA411 10 TO 400 MHz CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 3.0 dB TYP. · HIGH EFFICIENCY: 16 mA at +5 Vdc · HIGH THIRD ORDER I.P.: +29 dBm at +8 Vdc (TYP.) · MEDIUM OUTPUT LEVEL: +14.5 dBm at +8 Vdc (TYP.) Specifications (Rev. Date: 6/01)* Characteristics


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    PDF A411/SMA411 SMA411 CA411 5-146281-4 A411 CA411 SMA411

    t1p42

    Abstract: t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 FZT749 TC57
    Text: TC57 Series Linear Regulator Controller FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application at hand. This results in lower dropout operation and often


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    PDF TC57-based FZT749 DS21437A TC57-2 t1p42 t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 TC57

    AN1294

    Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
    Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description


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    PDF PD57030-E PowerSO-10RF PowerSO-10RF. AN1294 J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E

    Untitled

    Abstract: No abstract text available
    Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european


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    PDF SD4933 2002/95/EEC SD4933

    PNP marking NY sot-223

    Abstract: 2N4403 FZT749 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram
    Text: TC57 Line Regulator Controller Features General Description • Low Dropout Voltage: 100mV @ 650mA with FZT749 PNP Transistor • 2.7V to 8V Supply Range • Low Operating Current: 50µA Operating, 0.2µA Shutdown • Low True Chip Enable • Output Accuracy < ±2%


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    PDF 100mV 650mA FZT749 OT-23A TC57based D-81739 B73412SD* DS21437B-page PNP marking NY sot-223 2N4403 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram

    Untitled

    Abstract: No abstract text available
    Text: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF LET9045S PowerSO-10RF LET9045S

    AN1294

    Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
    Text: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF LET9045S PowerSO-10RF LET9045S AN1294 J-STD-020B PD57030S capacitor 220uf

    SMD TRANSISTOR A4 S

    Abstract: MOC8101X MOC8102 a4 smd transistor smd transistor a4 E91231 MOC8101 MOC8102X MOC8103 MOC8104
    Text: MOC8101X,MOC8102X,MOC8103X,MOC8104X,MOC8105X MOC8101, MOC8102, MOC8103,MOC8104,MOC8105 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l l 7.0 6.0 VDE 0884 in 3 available lead form : - STD


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    PDF MOC8101X MOC8102X MOC8103X MOC8104X MOC8105X MOC8101, MOC8102, MOC8103 MOC8104 MOC8105 SMD TRANSISTOR A4 S MOC8102 a4 smd transistor smd transistor a4 E91231 MOC8101

    FZ74

    Abstract: dtc105 si9430 ic FZ749 equivalent transistor K 2767 CAPACITOR TANTALUM 0.033uf 16v 595D CD54 TC105 TC105303ECT
    Text: TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type • • • • 57µA Typ Supply Current 1A Output Current 0.5µA Shutdown Mode 300kHz Switching Frequency for Small Inductor Size • Programmable Soft-Start • 92% Typical Efficiency • Small Package: 5-Pin SOT-23A


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    PDF TC105 300kHz OT-23A OT-23A SC-74A TC105 ma420 D-81739 FZ74 dtc105 si9430 ic FZ749 equivalent transistor K 2767 CAPACITOR TANTALUM 0.033uf 16v 595D CD54 TC105303ECT

    PD57045S

    Abstract: 700B AN1294 PD57045 PD57045-E PD57045S-E
    Text: PD57045-E PD57045S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 45W with 13dB gain @ 945MHz / 28V ■ New RF plastic package


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    PDF PD57045-E PD57045S-E 945MHz PowerSO-10RF PD57045 PowerSO-10RF. PD57and PD57045S 700B AN1294 PD57045-E PD57045S-E

    Untitled

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


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    PDF PD57060 PD57060S PowerSO-10RF PD57060S

    IC 2030 schematic diagram

    Abstract: MA737 Samsung Tantalum Capacitor 9430 mosfet si9430 ic stepping motor coil construction FZ749 FZ74 Step-Down, External PNP Saturated Switch 2030 ic 5 pins
    Text: TC105 PFM/PWM Step-Down DC/DC Controller FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TC105 is a step-down Buck switching controller that furnishes output currents of up to 1A (max) while delivering a typical efficiency of 92%. The TC105 normally


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    PDF TC105 TC105 TC105-2 DS21349A IC 2030 schematic diagram MA737 Samsung Tantalum Capacitor 9430 mosfet si9430 ic stepping motor coil construction FZ749 FZ74 Step-Down, External PNP Saturated Switch 2030 ic 5 pins

    TRANSISTOR 3kw

    Abstract: C4131 TRANSISTOR 3kw 11 2N2920DCSM small signal transistor S4 C3 5V 3kw transistor
    Text: 2N2920DCSM–QR–B DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= 4.32 ± 0.13 (0.170 ± 0.005)


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    PDF 2N2920DCSM TRANSISTOR 3kw C4131 TRANSISTOR 3kw 11 small signal transistor S4 C3 5V 3kw transistor

    Untitled

    Abstract: No abstract text available
    Text: b 3 b ? 2 5 4 G l O l b l G Sbb « M O T b O rder th is data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount Transistor With M onolithic Bias Resistor N etw ork M UN5211T1 M UN5212T1 M UN5213T1


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    PDF MUN5211T1/D SC-70/SOT-323 2PHX31155F-0

    Toshiba b9 grease

    Abstract: grease toshiba b9 EIA and EIAJ standards for marking EIA and EIAJ standards IC 2 5/grease toshiba b9
    Text: 5.1. Quality assurance program The quality and reliability of semiconductor elements are closely related and important to our daily lives as well as to industrial equip­ ment. In this section is explained the quality assurance program as shown in Fig. 1 and


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    PDF 168Hrs 2SD1406 150V140V^ 110V100V 70V60V50 168Hrs 500Hrs 500mA, Toshiba b9 grease grease toshiba b9 EIA and EIAJ standards for marking EIA and EIAJ standards IC 2 5/grease toshiba b9

    Untitled

    Abstract: No abstract text available
    Text: 66143 tna FOUR CHANNEL SURFACE MOUNT OPTICALLY COUPLED ISOLATOR OPTOELECTRONIC PRODUCTS DIVISION Features • • • • • • • Surface mountable on ceramic or printed circuit board Miniature package saves circuit board area Electrical performance similar to 4N47, 4N48 and


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    PDF MIL-S-19500 10OOVdc L-003

    WJ-CA45-1

    Abstract: WJ-CA45 wja45 wj-a45
    Text: WJ-A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Outline Drawings A 45-1 Specifications" Characteristics 0.200 (5.08) Guaranteed


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    PDF WJ-A45-1 SMA45-1 WJ-CA45-1 WJ-CA45 wja45 wj-a45

    WJ-A41

    Abstract: SMA41
    Text: WJ-A41 / SMA41 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-4 GHz MEDIUM OUTPUT LEVEL: +12 dBm TYP. LOW NOISE: 4.0 dB (TYP.) GaAs FET DESIGN Outline Drawings A41 Specifications5* 0.200 (5.08) Typical


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    PDF WJ-A41 SMA41 50-ohm 00070tj2 SMA41