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    SURFACE MOUNT TRANSISTOR AG QR Search Results

    SURFACE MOUNT TRANSISTOR AG QR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SURFACE MOUNT TRANSISTOR AG QR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5n06v

    Abstract: 5n06 TMOS E-FET AG3B CASE369A
    Text: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER


    Original     		PDF 5N06V/curves 5n06v 5n06 TMOS E-FET AG3B CASE369A

    Transistor b865

    Abstract: TAMP-72LN Box 34C MCL TAMP-72LN 3x62
    Text: Low Noise Amplifier TAMP-72LN+ 7TO- Z The Big Deal: s (IGH 0 D"MTYP s ,OW.OISE&IGURE D"TYP s )NTEGRATED"IAS-ATCHINGAND 3TABILITY#IRCUITS 0RICING$11.95 (QTY 5-49) Product Overview: 4HE4!-0 ,. 2O(3COMPLIANT UTILIZESADVANCED% 0(%-4TECHNOLOGYINASINGLESTAGELOWNOISE


    Original     		PDF TAMP-72LN+ Transistor b865 TAMP-72LN Box 34C MCL TAMP-72LN 3x62

    the t.amp 1400

    Abstract: the t.amp 1500 iso 1460 TAMP-1521GLN PL-293 TB-468
    Text: Low Noise Amplifier TAMP-1521GLN+ 7TO- Z The Big Deal: s 5LTRA,OW.OISE&IGURE D"TYP s (IGH 0 D"MTYP s (IGH'AIN D"TYP s )NTEGRATED"IAS-ATCHINGAND 3TABILITY#IRCUITS 0RICING$14.95 (QTY 5-49) Product Overview:


    Original     		PDF TAMP-1521GLN+ the t.amp 1400 the t.amp 1500 iso 1460 TAMP-1521GLN PL-293 TB-468

    DC04 display

    Abstract: how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt
    Text: Quality And Reliability Report 2005 DC04-0001 Page 1 of 79


    Original     		PDF DC04-0001 DC04 display how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt

    GP 836 DIODE

    Abstract: No abstract text available
    Text: Q P PA-6232 Surface Mount Cascadable Amplifier 2000 to 6000 MHz avantek FEATURES APPLICATIONS • Frequency Range: 2000 to 6000 MHz • High Dynamic Range • Noise Figure: 4.3 dB Typ • Surface Mount Package • Wideband Receiver Gain Block • IF Gain Block


    OCR Scan     		PDF PA-6232 PP-38, GP 836 DIODE

    4963 MOSFET

    Abstract: 6N diode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTV6N100E TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1-5 OHM N-Channel Enhancement-Mode Silicon Gate The D3PAK package has the capability of housing the largest chip


    OCR Scan     		PDF 0E-05 0E-04 0E-02 0E-01 4963 MOSFET 6N diode

    LT 8224 diode

    Abstract: DIODE LT 6202 LT 8224 LT 8224 TRANSISTOR
    Text: AVANTEK INC MME ]> n m % t 0007=100 4 BIAVA PPA-4132 •• Surface Mount Cascadable Amplifier 1000 to 4000 MHz ^ ^ ' " F '? 4 - 3 'O l A V A N T E K FEATURES APPLICATIONS • Frequency Range: 1000 to 4000 MHz • High Dynamic Range • Noise Figure: 4.5 dB (Typ


    OCR Scan     		PDF PPA-4132 PP-38, PPA-4132 Inp61 SS035 LT 8224 diode DIODE LT 6202 LT 8224 LT 8224 TRANSISTOR

    25N50E

    Abstract: 501 mosfet transistor mount chip transistor 332
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TV25N 50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = °-200 OHM N-Channel Enhancement-Mode Silicon Gate The D3pAK package has the capability of housing the largest chip


    OCR Scan     		PDF

    transistor z3m

    Abstract: Z3M IC z3m Transistor Z3M Y
    Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM


    OCR Scan     		PDF MTB75N03HDL/D 2PHX43416-0 transistor z3m Z3M IC z3m Transistor Z3M Y

    supper mosfets

    Abstract: k 351 transistor
    Text: MOTOROLA Order this document by MTD20N03HDUD SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20N03HDL HDTMOS E-FET™ High Density Pow er FET DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand


    OCR Scan     		PDF MTD20N03HDUD 2PHX43416 MTD20N03HDL/D supper mosfets k 351 transistor

    tb7104

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET High Energy Pow er FET D2PAK for S u rface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0-022 Q N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		PDF MTB71040L/D tb7104

    Untitled

    Abstract: No abstract text available
    Text: W J -A 9 /S M A 9 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22 dBm TYP. HIGH THIRD ORDER I.P.: +35 dBm (TYP.) WIDE POWER SUPPLY RANGE: +15 T O +24 VOLTS Outline Drawings A9 Specifications* 0450 n


    OCR Scan     		PDF

    surface mount transistor ag qr

    Abstract: amps ciss hen vd
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD4N20E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 200 VOLTS n DS on = 12 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTD4N20E 0E-04 0E-03 0E-02 0E-01 surface mount transistor ag qr amps ciss hen vd

    MTD1N80E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD1N80E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount Motorola Preferrod Device TM OS POWER FET 1.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an a d vanced te rm inatio n


    OCR Scan     		PDF hereTD1N80E MTD1N80E

    TH 2190 Transistor

    Abstract: 30p06v 30P06 P06V TH 2190 mosfet transistor 4413
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet M T B 3 0 P 06 V TM O S V™ P o w er Field E ffe c t T ran sisto r D 2PAK for S u rfa c e M ount M o to ro la P r e fe r re d D e v ic e TMOS POWER FET 30 AMPERES 60 VOLTS P-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF commuta14 0E-05 1OE-04 0E-02 TH 2190 Transistor 30p06v 30P06 P06V TH 2190 mosfet transistor 4413

    bergquist ge

    Abstract: transistor dk qq
    Text: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products HDTMOS Single N -C hannel Field E ffect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m il W aveFET™ de vice s are an ad van ced series of po w e r M O SFETs w hich utilize M o to ro la ’s


    OCR Scan     		PDF MMSF3300/D MMSF3300 bergquist ge transistor dk qq

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TD1N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N50E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 500 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TD1N50E/D TD1N50E MTD1N50E/D

    33N10E

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB33N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TB33N10E/D MTB33N10E/D 33N10E

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TV32N 25E TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r D3PAK for S u rfa c e M ount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate The D3pAK package has Ihe capability of housing the largest chip


    OCR Scan     		PDF 0E-05

    Untitled

    Abstract: No abstract text available
    Text: APR 2 2 »9 3 rz 7 S G S -T H O M S O N « œ i[L iM R l g S L3035 SUBSCRIBER LINE INTERFACE CIRCUIT ADVANCE DATA • M O NOCHIP SILICON SLIC O PTIM IZED FOR US APPLICATIO NS COX / DLC / PABX ■ IM PLEM ENTS ALL KEY FEATURES OF THE BO RSCHT FUNCTION ■ 63dB TYPICAL LONG ITUDINAL BALANCE


    OCR Scan     		PDF L3035 L3035

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB55N10EL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB55N10EL TMOS E-FET High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 55 AMPERES 100 VOLTS RDS on = 0.026 Q N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TB55N10EL/D MTB55N10EL/D

    Brain Box Mini 88 plus manual

    Abstract: MILITARY QUALIFIED DIP SWITCHES 95B04RA pico fuses color coding 3x4 keypad grayhill 71BD36-3119 grayhll DYNAMICS RESEARCH CORP. ENCODERS KSH 200 TRANSISTOR Cross reference 78M02S
    Text: N um ber 1 A n ISO -9001 C om pany Product Catalog M o n tre a l • O ttaw a • Toronto • W innipeg • Calgary • Vancouver Lannie Reynolds Account Manager -W.T.I. Manufacturers Representatives li. 7370 Bramalea Road, Unit 6617, Mississauga, Ontario L5S1N6


    OCR Scan     		PDF PARADYM-31 Brain Box Mini 88 plus manual MILITARY QUALIFIED DIP SWITCHES 95B04RA pico fuses color coding 3x4 keypad grayhill 71BD36-3119 grayhll DYNAMICS RESEARCH CORP. ENCODERS KSH 200 TRANSISTOR Cross reference 78M02S

    d4n01

    Abstract: D4N0 mdf4n MAN TGS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F4N 01H D Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors M otorola Preferred Device M iniM O S'“ devices are an advanced series of power MOSFETs which utilize M o to ro la ’s High Cell D ensity HDTMOS process.


    OCR Scan     		PDF DF4N01HD d4n01 D4N0 mdf4n MAN TGS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TD6N20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD6N20E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TD6N20E/D TD6N20E MTD6N20E/D