KSC5305D
Abstract: US Global Sat
Text: KSC5305D NPN Silicon Transistor Features • • • • • High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product
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KSC5305D
O-220
KSC5305D
US Global Sat
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Untitled
Abstract: No abstract text available
Text: KSC5305D NPN Silicon Transistor Features • • • • • High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product
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KSC5305D
O-220
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KSC5302DM
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DM
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KSC5302D
Abstract: No abstract text available
Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time
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KSC5302D
O-220
KSC5302D
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PDF
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KSC5305D
Abstract: No abstract text available
Text: KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time
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Original
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KSC5305D
O-220
KSC5305D
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KSC5302D
Abstract: No abstract text available
Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time
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Original
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KSC5302D
O-220
KSC5302D
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Internal schematic diagram C 2 • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time
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KSC5302DI
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KSC5302DM
Abstract: surgical spirit KSC5302D
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DM
surgical spirit
KSC5302D
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KSC5302DI
Abstract: No abstract text available
Text: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Internal schematic diagram C 2 • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time
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Original
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KSC5302DI
KSC5302DI
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KSC5302DM
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5302DM
O-126
KSC5302DM
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KSC5302DI
Abstract: IC-012
Text: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Equivalent Circuit C • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time
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KSC5302DI
KSC5302DI
IC-012
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KSC5302DI
Abstract: No abstract text available
Text: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Equivalent Circuit C • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time
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Original
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KSC5302DI
KSC5302DI
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PDF
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KSC5305D
Abstract: No abstract text available
Text: KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time
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Original
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KSC5305D
O-220
KSC5305D
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PDF
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KSC5302D
Abstract: No abstract text available
Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time
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Original
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KSC5302D
O-220
KSC5302D
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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Original
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KSC5302DM
O-126
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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Original
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KSC5302DM
O-126
KSC5302DMTU
KSC5302DMSTU
KSC5302DM
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PDF
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KSC5302D
Abstract: No abstract text available
Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time
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KSC5302D
O-220
KSC5302DTU
KSC5302D
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QS 100 NPN Transistor
Abstract: KSC5305DF
Text: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5305DF
O-220F
QS 100 NPN Transistor
KSC5305DF
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c5305d
Abstract: npn 300V 2A transistor DSA0023737
Text: KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time
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KSC5305D
O-220
KSC5305D
KSC5305DFTTU
KSC5305DTU
c5305d
npn 300V 2A transistor
DSA0023737
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time
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Original
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KSC5305D
O-220
KSC5305DTU
KSC5305D
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5305DF
O-220F
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K-Line
Abstract: K-line interface kline
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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U16422EE2V1PF00
K-Line
K-line interface
kline
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EZ80 tube
Abstract: TUBE EZ80 ZHX1223 0408 G Diode chip base lead plastic QFN tray ZHX1403 ZHX1203 ZHX1423 ZHX1810
Text: Packaging Product Specification PS007226-0408 Copyright 2008 by Zilog, Inc. All rights reserved. www.zilog.com Warning: DO NOT USE IN LIFE SUPPORT LIFE SUPPORT POLICY ZILOG'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF
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PS007226-0408
MKT71C1187-00
MKT71C1153-00
MKT71C1188-00
MKT71C1190-00
MKT71C1189-00
MKT71C0002-00
MKT71C1172-00
MKT71C1177-00
EZ80 tube
TUBE EZ80
ZHX1223
0408 G Diode
chip base lead plastic
QFN tray
ZHX1403
ZHX1203
ZHX1423
ZHX1810
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lc08a
Abstract: KSC5305D
Text: PRELIMINARY KSC5305D NPN SILICON TRANSISTOR TO*220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread
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OCR Scan
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KSC5305D
lc08a
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PDF
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