Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SWITCHING SYSTEMS INTERNATIONAL SQV Search Results

    SWITCHING SYSTEMS INTERNATIONAL SQV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    CS-VHDCIMX200-003 Amphenol Cables on Demand Amphenol CS-VHDCIMX200-003 VHDCI SCSI (SCSI-5) LVD/SE Cable - .8mm 68-pin VHDCI SCSI Male to Male 3m Datasheet
    CS-VHDCIMX200-000.5 Amphenol Cables on Demand Amphenol CS-VHDCIMX200-000.5 VHDCI SCSI (SCSI-5) LVD/SE Cable - .8mm 68-pin VHDCI SCSI Male to Male .5m Datasheet

    SWITCHING SYSTEMS INTERNATIONAL SQV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD INDUCTOR Marking Code

    Abstract: smd diode UJ 64 A ssl0804t-220m-s SEC 222M SSL1306T-100M-S smd diode Uj SCDS104R smd diode marking UJ inductor smd we 470 SCD0705
    Text: INDEX YAGEO CORPORATION 2 34 39 42 46 49 52 64 70 76 91 104 109 118 124 135 135 138 142 143 144 147 148 150 153 157 159 178 193 208 216 218 220 222 228 241 252 254 258 261 276 278 280 286 Multilayer Ferrite Chip Beads [ SB/ PB/UP/NB/GB Series ] Multilayer Ferrite Chip Beads [ BA Series ]


    Original     		1000Hrs. 24Hrs. SMD INDUCTOR Marking Code smd diode UJ 64 A ssl0804t-220m-s SEC 222M SSL1306T-100M-S smd diode Uj SCDS104R smd diode marking UJ inductor smd we 470 SCD0705 PDF

    PBY 386

    Abstract: NBQ201209T-121Y-S land pattern 0805 PBY160808T-601Y SCDS124T PBY100505T-100Y-S CLH1608T-10NJ-S SBK201209T-202Y-S SCD0403T PBY160808T-600Y-S
    Text: INDEX YAGEO CORPORATION 2 22 26 30 33 36 40 47 51 55 66 74 85 100 101 102 105 106 108 111 115 123 129 135 137 138 139 140 144 152 154 158 159 161 163 164 165 166 167 168 173 174 175 179 180 Multilayer Ferrite Chip Beads [ SB/PB/UP/NB/GB Series ] Multilayer Ferrite Chip Beads [ BA Series ]


    Original     		24Hrs. 1000Hrs. PBY 386 NBQ201209T-121Y-S land pattern 0805 PBY160808T-601Y SCDS124T PBY100505T-100Y-S CLH1608T-10NJ-S SBK201209T-202Y-S SCD0403T PBY160808T-600Y-S PDF

    85c407

    Abstract: intel 486dx4 85C407 sis 85C471 sis 85c471 SIS 85C407 SIS 85C471 STEbus sis85c407 arcom STEbus
    Text: J502 SCPC486 2192-09127-000-000 SCPC486 STEbus 486DX PC AT Compatible Board Technical Manual Product Information Full information about other Arcom products is available via the Fax-on-Demand System, Telephone Numbers are listed below , or by contacting our WebSite in the UK at: www.arcom.co.uk , or in the US


    Original     		SCPC486 486DX icpsale2192-09127-000-000 85c407 intel 486dx4 85C407 sis 85C471 sis 85c471 SIS 85C407 SIS 85C471 STEbus sis85c407 arcom STEbus PDF

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM2200EDRAM 256-byte DM2200 DM2200J PDF

    Untitled

    Abstract: No abstract text available
    Text: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ p M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ 8ns Burst Read Capability ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM2200EDRAM 256-byte DM2200J PDF

    Untitled

    Abstract: No abstract text available
    Text: DM2202/2212 EDRAM 1Mb x 4 Enhanced Dynamic RAM F ^ M T R O N Pioduct Specification Features • 2Kbit SRAM Cache Memory tor I Sns Random Reads W ithin a Page ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM2202/2212 DM22I2) DM2202J PDF

    edram

    Abstract: No abstract text available
    Text: DM2203/2213EDRAM 512Kbx 8 Enhanced Dynamic RAM F ^ M T R O N Preliminary Datasheet Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM2203/2213EDRAM 512Kbx 256-byte DM2203/DM2213 DM2203T edram PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 ÖE D 7555015 D 0 Q 0 1 ÖS 51? I RAM DM2200EDRAM 'TT4tZ3-37 4Mbx1 EnhancedDynamic RAM r ^ M lR O IN I Preliminary Datasheet R A MT RO N CORP Features • 2K-bits of 15nsec SRAM Cache Memory ■ On-Chip Cache Hit/Miss Comparator ■ Refresh Counter with Dedicated Path to DRAM Array


    OCR Scan     		DM2200EDRAM T4tZ3-37 15nsec 35nsec PDF

    Untitled

    Abstract: No abstract text available
    Text: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM r ^ M T R O N Product Specification Features Architecture • 2KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM1M36SJ PDF

    Untitled

    Abstract: No abstract text available
    Text: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM r ^ M T R O N Product Specification Features Architecture • 4KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced M2M32SJ) DM2M36SJ PDF

    CQX 13

    Abstract: 2233S
    Text: DM2223/2233Sync Bursting EDRAM 512Kb x 8 Enhanced Dynamic RAM A V r ^ p M T R O N Features • 8Kbit SRAM Cache Memory for 15ns Random Keaiis Within lem Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Am V'v, hif-e ■ Write Posting Register for 15ns Random or Burs! Write- Within


    OCR Scan     		DM2223/2233Sync 512Kb DM2223/DM2233 2223T-15 CQX 13 2233S PDF

    DM 0365 R pin EQUIVALENT

    Abstract: No abstract text available
    Text: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM ^ I M T R O I M Features Architecture rile DM2M iliSJ achieves 2Mb x 36 density by mounting 18 1M x i I.DRAVls, packaged in 28-pin plastic SOJ packages, on both sides of the multi-layer substrate. Sixteen


    OCR Scan     		DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 28-pin DM2202 DM2212 DM2M32SJ DM2202 DM2212J-XX, DM2M32SJ) C1-C18 DM 0365 R pin EQUIVALENT PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 M T R O N DM2223/2233Sync Bursting EDRAM 512Kbx 8 EnhancedDynamic RAM Preliminary Datasheet Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random or Burst Writes Within


    OCR Scan     		DM2223/2233Sync 512Kbx a2-78 DM2223/DM2233 DM2223T PDF

    2mb 72-pin simm

    Abstract: 10782
    Text: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM F ^ M T R O N Product Specification Features • 2Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM2212J-XX, 1M32SJ) DM1M36SJ 2mb 72-pin simm 10782 PDF

    U615

    Abstract: DM 0365 R pin EQUIVALENT U716 U1018
    Text: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM r ^ p M T R O N Features • 4Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM DM2212J-XX, OM2M32SJ) DM2M36SJ U615 DM 0365 R pin EQUIVALENT U716 U1018 PDF

    Untitled

    Abstract: No abstract text available
    Text: F ^ M T R O DM2202EDRAM 1Mb x 4 Enhanced Dynamic RAM N Preliminary Datasheet Features • 2K-bits of 15nsec SRAM Cache Memory ■ On-Chip Cache Hit/Miss Comparator ■ Refresh Counter with Dedicated Path to DRAM Array ■ Write Posting Register with Path to DRAM Array


    OCR Scan     		DM2202EDRAM 15nsec 35nsec 2202J PDF

    write-verify

    Abstract: u327
    Text: ^ M DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM T T R O IN J •eatures Architecture The DM1M3 >S| achieves I Mb \ ,i(> density b\ mounting nine 1M 1 2kliyte SRAM Cache Memon lor 1ms Random Reads W illiin a Page \ I ICDRAMs, packaged in 2N-pin plastic SOJ packages, on a multi­


    OCR Scan     		DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM2202 DM2212 IM32SJ write-verify u327 PDF

    SWITCHING SYSTEMS INTERNATIONAL SQV

    Abstract: BUT32 CQX 35
    Text: I ^pM TR O N DM2202& DM2212 EDRAM 1Mbx 4 EnhancedDynamic RAM Features I 2 K-bits of 15nsec SRAM Cache Memory I Transparent DRAM Refresh Allowed During Page Reads I On-Chip Cache Hit/Miss Comparator I Hidden DRAM Precharge During Page Reads I Refresh Counter with Dedicated Path to DRAM Array


    OCR Scan     		15nsec SWITCHING SYSTEMS INTERNATIONAL SQV BUT32 CQX 35 PDF