0015923C
Abstract: 2N6547 sc08820
Text: 2N6547 High voltage fast-switching NPN power transistor Datasheet - production data Features • • • • NPN transistor High voltage capability High current capability Fast switching speed Applications 1 • • 2 TO-3 Switched mode power supplies Flyback and forward single transistor low
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2N6547
2N6547
SC08820
DocID8252
0015923C
sc08820
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APT13003Z-E1
Abstract: transistor 2808 APT13003 bcd
Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.
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APT13003
APT13003
APT13003Z-E1
transistor 2808
APT13003 bcd
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with
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APT13005
O-220-3,
O220-3
O-220F-3
APT13005
O-220F-3
O-220-3
O-220-3
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Untitled
Abstract: No abstract text available
Text: 2N6547 High voltage fast-switching NPN power transistor Datasheet - production data Features • • • • NPN transistor High voltage capability High current capability Fast switching speed Applications 1 • • 2 TO-3 s ct Figure 1: Internal schematic diagram
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2N6547
2N6547
DocID8252
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j5554
Abstract: FJP5554 FJP5554TU
Text: FJP5554 High Voltage Fast Switching Transistor FJP5554 High Voltage Fast Switching Transistor Features • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 1.Base TO-220 2.Collector 3.Emitter Absolute Maximum Ratings
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FJP5554
FJP5554
O-220
j5554
FJP5554TU
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Untitled
Abstract: No abstract text available
Text: FJP5554 High Voltage Fast Switching Transistor FJP5554 High Voltage Fast Switching Transistor Features • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 1.Base TO-220 2.Collector 3.Emitter Absolute Maximum Ratings
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FJP5554
FJP5554
O-220
J5554
J5554
FJP5554TU
FJP55gn
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Untitled
Abstract: No abstract text available
Text: STD127DT4 High voltage fast-switching NPN power transistor Datasheet - production data Features • NPN transistor • High voltage capability TAB • Low spread of dynamic parameters • Minimum lot-to-lot spread for reliable operation 3 1 • Very high switching speed
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STD127DT4
DocID025553
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2n2222a transistor
Abstract: 2N2222ADCSM dual npn 500ma 2N2222A surface mount 2N2222A LE17 013 transistor
Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device
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2N2222ADCSM
2N2222A
500mW
MO-041BB)
2n2222a transistor
2N2222ADCSM
dual npn 500ma
2N2222A surface mount
LE17
013 transistor
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Untitled
Abstract: No abstract text available
Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device
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2N2222ADCSM
2N2222A
500mW
86mW/Â
MO-041BB)
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Untitled
Abstract: No abstract text available
Text: MJE172 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device Applications ■ Audio amplifier ■ High speed switching applications Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology
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MJE172
OT-32
OT-32
MJE172
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Untitled
Abstract: No abstract text available
Text: MJE172 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device Applications ■ Audio amplifier ■ High speed switching applications Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology
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MJE172
OT-32
OT-32
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MMBT2369
Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
Text: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol
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MMBT2369
MMBT2369
100mA.
OT-23
MARK 1J
HIGH SPEED SWITCHING NPN SOT23
MMBT2369 SOT23
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702 TRANSISTOR smd
Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N smd transistor marking B5 702 N smd transistor TRANSISTOR SMD MARKING CODE LF 70.2 TRANSISTOR smd 702 k TRANSISTOR smd 702 transistor smd code
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES • Low current max. 100 mA handbook, halfpage
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M3D088
BSR12
BSR12
MAM256
BSR12/C
ICP1020807
01-Jul-2011
702 TRANSISTOR smd
TRANSISTOR SMD MARKING CODE 702
702 TRANSISTOR smd SOT23
TRANSISTOR SMD 702 N
smd transistor marking B5
702 N smd transistor
TRANSISTOR SMD MARKING CODE LF
70.2 TRANSISTOR smd
702 k TRANSISTOR smd
702 transistor smd code
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Untitled
Abstract: No abstract text available
Text: MJE172 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device s ct Applications ■ Audio amplifier ■ High speed switching applications u d o r P e Description This device is an NPN low voltage transistor manufactured using epitaxial planar technology
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MJE172
OT-32
OT-32
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2N2369A
Abstract: No abstract text available
Text: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO
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2N2369A
200mA
360mW
O-206AA)
2N2369A
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Untitled
Abstract: No abstract text available
Text: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO
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2N2369A
200mA
360mW
06mW/Â
80mW/Â
O-206AA)
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Untitled
Abstract: No abstract text available
Text: NPN SWITCHING TRANSISTOR 2N2369ACSM • Silicon Planer Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N2369ACSM
200mA
360mW
06mW/Â
80mW/Â
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD432101D TECHNICAL DATA DATA SHEET 800, REV - DUAL HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTOR DESCRIPTION: A DUAL NPN, HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTOR IN A HERMETIC CERAMIC SURFACE MOUNT LCC-6 PACKAGE. MAXIMUM RATINGS
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SHD432101D
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Untitled
Abstract: No abstract text available
Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS
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MJE13007
MJE13007
O-220
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BUT11AI
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control
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BUT11AI
O220AB
BUT11AI
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
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j5304d
Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
Text: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit
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FJU5304D
FJU5304D
j5304d
J5304
J530
FJU5304DTU
free transistor and ic equivalent data o
Transistor AND DIODE Equivalent list
transistor j5304d
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
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d1273
Abstract: SS-220 10v PA1851 UPA1851GR-9JG
Text: DATASHEET MOS Field Effect Transistor H P A 1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The //PA1851 is a switching device which can be driven directly by a 4V power source. The n PA1851 features a low on-state resistance and excellent
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uPA1851
105mQMAX.
210mQMAX.
J45a9
d1273
SS-220 10v
PA1851
UPA1851GR-9JG
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