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    SY10E404JCTR Search Results

    SY10E404JCTR Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SY10E404JCTR Micrel Semiconductor Quad Differential AND/NAND Gate Original PDF
    SY10E404JCTR Micrel Semiconductor QUAD DIFFERENTIAL AND/NAND Original PDF
    SY10E404JC-TR Microchip Technology Integrated Circuits (ICs) - Logic - Gates and Inverters - Multi-Function, Configurable - IC GATE AND/NAND QUAD 28-PLCC Original PDF
    SY10E404JCTR Synergy Semiconductor QUAD DIFFERENTIAL AND/NAND Scan PDF
    SY10E404JCTR Synergy Semiconductor QUAD DIFFERENTIAL AND/NAND Scan PDF

    SY10E404JCTR Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SY10E404 SY100E404 FINAL QUAD DIFFERENTIAL AND/NAND DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V 700ps max. propagation delay High frequency outputs Internal 75KΩ input pull-down resistors Fully compatible with Motorola 10E/100E404


    Original     		PDF SY10E404 SY100E404 700ps 10E/100E404 28-pin J28-1 SY10E404JCTR SY100E404JC

    100E404

    Abstract: SY100E404 SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR
    Text: QUAD DIFFERENTIAL AND/NAND DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle


    Original     		PDF SY10/100E404 SY10E404JCTR J28-1 SY100E404JC SY100E404JCTR SY10E404 SY100E404 J28-1) 100E404 SY100E404 SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR

    PART MARKING D0B

    Abstract: MARKING d2b marking diode D2B SY100E404 SY100E404JC SY10E404 SY10E404JC SY10E404JZ
    Text: • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were


    Original     		PDF SY10/100E404 M9999-032206 PART MARKING D0B MARKING d2b marking diode D2B SY100E404 SY100E404JC SY10E404 SY10E404JC SY10E404JZ

    SY100E404

    Abstract: SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR
    Text: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q ■ Extended 100E V ee range of -4.2V to -5.5V The SY 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make


    OCR Scan     		PDF SY10E404 SY100E404 700ps 10E/100E404 SY10/100E404 SY10E404JC J28-1 SY10E404JCTR SY100E404JC SY100E404 SY100E404JCTR

    Untitled

    Abstract: No abstract text available
    Text: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle


    OCR Scan     		PDF SY10E404 SY100E404 10/100E404

    Z27D

    Abstract: No abstract text available
    Text: FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Differential D and Q Extended 100E V e e range of -4.2V to -5.5V 700ps max. propagation delay High frequency outputs Internal 75KQ input pull-down resistors ESD protection of 2000V Fully compatible with Motorola 10E/100E404


    OCR Scan     		PDF 700ps 10E/100E404 28-pin SY10/100E404 SY10E404JC SY10E404JCTR SY100E404JC 100E404JCTR J28-1 Z27D

    Untitled

    Abstract: No abstract text available
    Text: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle


    OCR Scan     		PDF SY10E404 SY100E404 10/100E404

    Untitled

    Abstract: No abstract text available
    Text: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES DESCRIPTION Differential D and Q Extended 100E V ee range of -4.2V to -5.5V 700ps max. propagation delay High frequency outputs Internal 75K£i input pull-down resistors ESD protection of 2000V


    OCR Scan     		PDF SY10E404 SY100E404 700ps 10E/100E404 10/100E J28-1 SY10E404JCTR SY100E404JC

    Untitled

    Abstract: No abstract text available
    Text: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle


    OCR Scan     		PDF SY10E404 SY100E404 10/100E404 SY10E404JC J28-1 SY10E404JCTR SY100E404JC SY100E404JCTR

    SY100E404

    Abstract: SY100E404JC SY10E404 SY10E404JC SY10E404JCTR
    Text: * OUAD DIFFERENTIAL AND/NAND SYNERGY S E M IC O N D U C TO R FEATURES W 1„c „ . SY100E404 DESCRIPTION Differential D and Q Extended 100E V e e range of -4 .2 V to - 5 .5 V 700ps max. propagation delay High frequency outputs Internal 7 5 K ii input pull-down resistors


    OCR Scan     		PDF SY10E404 SY100E404 700ps 75Kii 10E/100E404 SY10/100E404 SY10E404JC J28-1 SY10E404JCTR SY100E404 SY100E404JC