Contextual Info: • 0DDfi07M biß ■RHI1 LA-221 Series ' f X — K / L ig h t Emitting Diodes LA-221 ro w * « ? # ? * * » Series High-Efficiency Numeric Displays 1 0 /D im e n s io n s Unit : mm LA-221 v ' J - X i i , 1 2 ± 0 .3 ¿0.6 L T H 3 S L tc , 57mm Series LA-221 are high-efficiency nu­

54X4

Abstract: lf 221 LA-221
Contextual Info: • 7 a 2 f l tm ^ — 00DB074 blB ■ RHfl LA-221 Series K /L ig h t Emitting Diodes LA-221 Series High-Efficiency Numeric Displays 1j4 Jfi\H :£ E l/ D irn e n sio n s U n it: mm LA-221 ' s V —X l i , 12±0.3 ¿0.6 48 + 0.3 U s e ic is iis Ä L T i f L t ,

41 894-222A4

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 221 N C C HK HK red 6,3 x 0,8 6,3 x 0,8 70mm² Cu 70mm² Cu G yellow G yellow ø3,2 x 15 SW41 hole for temperature measurement ø 3,2 x 1,5 deep ø54 M24 x 15 A A VWK Aug. 1996 T 221 N

221N2

Abstract: T221N VT221
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 221 N C C HK HK red 6,3 x 0,8 6,3 x 0,8 70mm² Cu 70mm² Cu G yellow G yellow ø3,2 x 15 SW41 hole for temperature measurement ø 3,2 x 1,5 deep ø54 M24 x 15 A A VWK Aug. 1996 T 221 N

41 894-222A4

Abstract: T 221 N 20
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 221 N C C HK HK red 6,3 x 0,8 6,3 x 0,8 70mm² Cu 70mm² Cu G yellow G yellow ø3,2 x 15 SW41 hole for temperature measurement ø 3,2 x 1,5 deep ø54 M24 x 15 A A VWK Aug. 1996 T 221 N

41 894-222A4

Abstract: T221N
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 221 N C C HK HK red 6,3 x 0,8 6,3 x 0,8 70mm² Cu 70mm² Cu G yellow G yellow ø3,2 x 15 SW41 hole for temperature measurement ø 3,2 x 1,5 deep ø54 M24 x 15 A A VWK Aug. 1996 T 221 N

FR220

Abstract: IFU220 IRFU N-Channel Power MOSFETs FR 220 IRFU ir 222 IRF N-Channel Power MOSFETs RC 4565 IFU221
Contextual Info: m Ha r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Pa cka ges Features T O -2 5 1 A A T O P VIEW • 3.8A and 4.6A, 150V and 200V • rDS on = 0.80fi and 1.2fl >S O U R C E • Single Pulse Avalanche Energy Rated

LCD12

Abstract: upd1708ag-021 kSO 947 23/ST 9956
Contextual Info: MOS INTEGRATED CIRCUITS /¿PD1708AG-021,jtfPD1708AG-221 PLL F R E Q U E N C Y S Y N T H E S I Z E R A N D C O N T R O L L E R FOR M O B ILE F M / A M R A D IO W IT H CLOCK The /LiPD1708AG-021 , n PD 708A G -221, a CMOS LSI chip developed fo r a P LL frequency synthesizer FM /A M

MRF245

Abstract: MRF237 MRF221 MRF238 MRF243 MRF244 2n5591 2N6151 2N6153 MRF212
Contextual Info: TRIACs in Plastic Packages O N -ST A T E R M S C U R R E N T 25 30 0.45 Am p 4.0 Am p 8.0 Am p 10 Am p Case 29-02 TO-92 Style 12 Case 77-03 Style 5 Case 221-02 TO-220 A B Style 2 Case 90-05 Style 4 Case 221-02 T 0 -22 0 A B Style 2 M A C 10-1 2N6068 MAC92-1I

SGSP477

Contextual Info: SGS-THOMSON m SGSP477 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: • METALLIZATION: Top Back 221 x 221 mils Al - max 7 mils M s P-Vapox 5 6 x 4 3 mils 18 x 18 mils c T 16 ± 2 mils • RECOMMENDED WIRE BONDING: Gate 6100 Â

PMI OP221G

Abstract: op221
Contextual Info: OP-221 FMI DUAL LOW-POWER OPERATIONAL AMPLIFIER SINGLE OR DUAL SUPPLY) P r e c i s i o n M o n o l i t h ics inc. FEATURES w id e s u p p ly vo lta g e range, w ide in p u t vo lta g e range, and low s u p p ly c u rre n t d ra in o f th e OP-221 m ake it w e ll-su ite d fo r

pj 996 diode

Abstract: ME 9435 ESS 9018 pd1708 ST 9956 NEC car radio 4.5-Mhz MPD1708 LCD 1602 LCD12 UPD708
Contextual Info: r MOS INTEGRATED CIRCUITS j /PD 1708A G -021,//PD 1708A G -221 P LL F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R FO R M O B IL E F M / A M R A D IO W IT H C L O C K The /LiPD1708AG-021 ,n PD 708AG-221, a CMOS LSI chip developed for a P L L frequency synthesizer FM/AM

Contextual Info: Alle Rechte vorbehalten/ 1111 rights resened 5 4 1 3 D C B Wi r e - Cu t i n n e d Gauge- AWG 28/ 7 V o l t a g e r a t i n g - 300 Vr . m. s Conduct or r esi s t a n c e - 221 mfi/m

Contextual Info: SPECIFICATION Customer : Customer's P/N: K.C.Dwg.No. : K.C.P/N. : PF1618MT 1 P/N FBM 1 6 0 8 0 8 10 221 T Packaging Style Dimension Material Code s Symbol of Product Impedance e Packaging Style: B: Bulk , T: Tape and reel (2)Mechanical Dim. (3) Electrical Characteristic

Contextual Info: Alle Rechte vorbehalten/1111 rights resened 5 4 3 1 2 43,84 C B Wi r e - Cu t i n n e d Gauge- AWG 28/ 7 V o l t a g e r a t i n g - 300 Vr . m. s Conduct or r esi s t a n c e - 221 mfi/m

Contextual Info: A lle Rechte v o rb e h a lte n / 1111 rights resened 3 33,68 Wi r e - •Cu t i n n e d Gauge- •AWG 28/ 7 Vo I t age r a t i ng- .300 Vr . m. s Conduct or r e s i s t a n c e .221 mfi/m

Contextual Info: PMÏ OP-221 DUAL LOW-POWER OPERATIONAL AMPLIFIER SINGLE OR DUAL SUPPLY) P r e c is io n M o n o lit h ic s In c . FEA T U R E S • • • • • • • • • • wide supply voltage range, wide input voltage range, and low supply current drain of the OP-221 make it well-suited for

Contextual Info: SPECIFICATION Customer : Customer's P/N: K.C.Dwg.No. : K.C.P/N. : PF2021NT 1 P/N FBM 2 0 1 2 0 9 11 221 T Packaging Style Dimension Material Code s Symbol of Product Impedance e Packaging Style: B: Bulk , T: Tape and reel (2)Mechanical Dim. (3) Electrical Characteristic

Contextual Info: SPECIFICATION Customer : Customer's P/N: K.C.Dwg.No. : K.C.P/N. : PF1618NT 1 P/N FBM 1 6 0 8 0 8 11 221 T Packaging Style Dimension Material Code s Symbol of Product Impedance e Packaging Style: B: Bulk , T: Tape and reel (2)Mechanical Dim. (3) Electrical Characteristic

Contextual Info: SPECIFICATION Customer : Customer's P/N: K.C.Dwg.No. : K.C.P/N. : PF2021MT 1 P/N FBM 2 0 1 2 0 9 10 221 T Packaging Style Dimension Material Code s Symbol of Product Impedance e Packaging Style: B: Bulk , T: Tape and reel (2)Mechanical Dim. (3) Electrical Characteristic

Contextual Info: Alle Rechte vorbehalten/ 1111 rights resened 5 4 2 3 1 D C B Wi r e - Cu t i n n e d Gauge- AWG 28/ 7 V o l t a g e r a t i n g - 300 Vr . m. s Conduct or r esi s t a n c e - 221 mfi/m

Contextual Info: Alle Rechte vorbehalten/ 1111 rights resened 5 4 2 3 1 26,06 C B Wi r e - Cu t i n n e d Gauge- AWG 28/ 7 V o l t a g e r a t i n g - 300 Vr . m. s Conduct or r esi s t a n c e - 221 mfi/m

Contextual Info: Alle Rechte vorbehalten/ 1111 rights resened 5 4 2 3 1 D C B Wi r e - Cu t i n n e d Gauge- AWG 28/ 7 V o l t a g e r a t i n g - 300 Vr . m. s Conduct or r esi s t a n c e - 221 mfi/m

S320S3

Contextual Info: R S M ELECTRON/SENSITRON IflE D • 7 S 0 3 b S D GOODflb? =1 ■ - T-03-17 - ^S E N S IT R O N _ SEMICONDUCTOR 221 INest Industry C ourt • Deer Park, N Y 11729