EUPEC T 691 S 30 thyristor
Abstract: T 308 THYRISTOR EUPEC T 1078 F T 468 THYRISTOR EUPEC Thyristor h 198 s Thyristor PIN CONFIGURATION T 481 thyristor EUPEC Thyristor asymmetric thyristor T675S
Text: . power the Home Products F-Thyristors News Contact Editorials Fast Thyristors V DRM,RRM max. 800 V T 72 F T 102 F . . T 178 F T 308 F T 698 F T 1078 F . Job Offers Company Search Site Content Fast Asymm. Thyristors the figures in the part-no. represent the current rating [A]
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n719
Abstract: T2551 D 711 N 58 T D1181S T1329N T188F SD1408
Text: Clamping Force kN and Disc Diameter (mm) Phase control thyristors Typ kN mm Phase control thyristors Typ kN mm T T T T T T T T T T T T T T T T 178 N 201 N 218 N 268 N 298 N 308 N 348 N 358 N 378 N 380 N 388 N 398 N 399 N 458 N 459 N 501 N 2,5 - 5 7 - 12
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4021N
Abstract: D 471 ft408 SD1121 D 3001 N 60 T D2601NH NT2401 D798 T 1709 D438
Text: kuka-2006-de-inhalt.qxd IGBT 07.02.2006 12:17 Uhr Seite 124 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 124 Clamping Force kN and Disc Diameter (mm) Typ T 178 N T 201 N T 218 N T 298 N T 308 N T 348 N T 358 N T 378 N T 379 N T 380 N
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kuka-2006-de-inhalt
4021N
D 471
ft408
SD1121
D 3001 N 60 T
D2601NH
NT2401
D798
T 1709
D438
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T120F
Abstract: T670F T188F T290F thyristoren T308F T 698 T691S T510S T318
Text: Maßbilder/Outlines Thyristoren/Thyristors T 72 F T 80 F T 102 F T120F case B T 320 F 5 154 T318 F T 358 S T 408 F T 698 F T 1078 F A 358 S A 438 S 2 T 290 F 4 T 128 F T 178 F 6 T 468 S T188F T 308 F A 158s A198S Maßbilder/Outlines Thyristoren/Thyristors
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T120F
T188F
A198S
T510S
T120F
T670F
T188F
T290F
thyristoren
T308F
T 698
T691S
T510S
T318
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Thyristor bst 2
Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
Text: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse
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CA3081,
CA3082
1-888-I
CA3082
CA3081)
CA3082)
100mA
Thyristor bst 2
transistor arrays 5v
CA3081
DR2000
40736R
CA3081F
CA3081M
CA3082M
CA3082M96
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5STF 23H2040 5STF 23H2040 Fast Thyristor Properties • Amplifying gate • High operational capability Optimized turn-off parameters Applications Power switching applications Key Parameters V DRM, V RRM = 2 000 I TAV = 2 378
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23H2040
1768/138a,
TR/308/12
May-12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5STF 23H2040 5STF 23H2040 Fast Thyristor Properties • Amplifying gate • High operational capability Optimized turn-off parameters Applications Power switching applications Key Parameters V DRM, V RRM = 2 000 I TAV = 2 322
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23H2040
1768/138a,
TR/308/12c
Mar-14
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T2500D
Abstract: triac T2500
Text: T2500D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • Blocking Voltage 400 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter
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T2500D
T2500D,
r14525
T2500/D
T2500D
triac T2500
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NYR0120PWT1
Abstract: NYR0160PWT1 R0160
Text: NYR0120PWT1, NYR0160PWT1 Product Preview Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors http://onsemi.com PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for
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NYR0120PWT1,
NYR0160PWT1
NYR0120PWT1:
R0120;
NYR0160PWT1:
R0160,
r14525
NYR0120PWT1/D
NYR0120PWT1
NYR0160PWT1
R0160
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MCR218
Abstract: MCR218-2 MCR218-4 MCR218-6
Text: MCR218-2, MCR218-4, MCR218-6 Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.
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MCR218-2,
MCR218-4,
MCR218-6
O-220
MCR218
r14525
MCR218/D
MCR218-2
MCR218-4
MCR218-6
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C122B1
Abstract: C122F c122f1
Text: C122F1, C122B1 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half–wave silicon gate–controlled, solid–state devices are needed.
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C122F1,
C122B1
r14525
C122F1/D
C122B1
C122F
c122f1
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T2800D
Abstract: No abstract text available
Text: T2800D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • Blocking Voltage to 400 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter
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T2800D
T2800D,
r14525
T2800/D
T2800D
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MCR16N
Abstract: code marking mcr16
Text: MCR16N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed.
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MCR16N
220AB
MCR16N,
800LL
r14525
MCR16/D
MCR16N
code marking mcr16
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221C
Abstract: MAC229A10FP MAC229A8FP
Text: MAC229A8FP, MAC229A10FP Triacs Silicon Bidirectional Thyristors Designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.
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MAC229A8FP,
MAC229A10FP
E69369
r14525
MAC229A8FP/D
221C
MAC229A10FP
MAC229A8FP
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MAC223A8
Abstract: MAC223A10 MAC223A6 TRIAC MAC223A8
Text: MAC223A6, MAC223A8, MAC223A10 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies; or wherever full–wave silicon–gate–controlled devices are needed.
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MAC223A6,
MAC223A8,
MAC223A10
r14525
MAC223A/D
MAC223A8
MAC223A10
MAC223A6
TRIAC MAC223A8
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MCR72-3
Abstract: MCR72-8 MCR72-6 MCR72
Text: MCR72-3, MCR72-6, MCR72-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors http://onsemi.com Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls;
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MCR72-3,
MCR72-6,
MCR72-8
MCR72
r14525
MCR72/D
MCR72-3
MCR72-8
MCR72-6
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MCR12LD
Abstract: MCR12LM MCR12LN
Text: MCR12LD, MCR12LM, MCR12LN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed.
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MCR12LD,
MCR12LM,
MCR12LN
220AB
r14525
MCR12L/D
MCR12LD
MCR12LM
MCR12LN
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MAC228A10
Abstract: MAC228A6 MAC228A8 MAC228A MAC228A4
Text: MAC228A Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.
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MAC228A
MAC228A4,
r14525
MAC228A/D
MAC228A10
MAC228A6
MAC228A8
MAC228A4
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MCR264
Abstract: MCR264-4 MCR264-6 MCR-26 italy scr MCR264-8
Text: MCR264-4, MCR264-6, MCR264-8 Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature
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MCR264-4,
MCR264-6,
MCR264-8
MCR264
r14525
MCR264-4
MCR264-6
MCR-26
italy scr
MCR264-8
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T235N
Abstract: T308N
Text: EUPEC 52E T> 34035^7 T 308 N 0D00743 SSI MUPEC - P Z Ö - / ? iypenreihe/iype ränge T 308 N Elektrisch« Eigenschaften Electrical properties Höchstzulässiqe Werte Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
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T308N
tVjS45Â
aMDBS11}
25/Detail
T235N
T308N
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aeg T308
Abstract: LS100 T308 T308N
Text: fil DE I □ 0 B ci42t. QDDt.lt,2 S | T308N Typenreihe/Type range_ T 308 N _ 2000_2200_ 2400_2600* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Riickwärts-Spitzensperrspannung
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0Bci42t.
T308N
25/Detall
aeg T308
LS100
T308
T308N
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2T930
Abstract: thyristor t 718 n t1791 D 1481 N 60 T SD178 649S D 2601 N 90 T 2651N gct thyristor T188F
Text: Clamping Force kN Phase control thyristors Type kN mm T 178 N T 201 N T 218 N T 268 N T 298 N T 308 N T 348 N T 358 N T 378 N T 380 N T 388 N T 398 N T 399 N T 458 N T 459 N T 501 N T 508 N T 509 N T 551 N T 568 N T 588 N T 589 N T 618 N T 619 N T 648 N
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1200N
T1791
D2201
D931SH
D1031SH
D1131SH
D1331SH
D1441SX
D1641SX
2T930
thyristor t 718 n
D 1481 N 60 T
SD178
649S
D 2601 N 90 T
2651N
gct thyristor
T188F
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CA3081 RCA
Abstract: CA3082 RCA CA3081 CA308
Text: Arrays ÎH H A R R IS S E M I C O N D U C T O R RCA GE • C A 308 1, CA3082 INTERSIL M ay 1 9 9 0 General-Purpose High-Current N -P -N Transistor Arrays C A 3081 - C o m m o n -E m itter Array C A 3 0 8 2 - C o m m on -C o llecto r Array Directly Drive 7 -S e g m e n t Incandescent Displays and L ig h t-E m ittin g -D io d e LED Displays
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CA3082
CA3081)
CA3082)
CA3081
CA3082
CA3081,
CA3081 RCA
CA3082 RCA
CA308
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thyristor AEG t 10 n 600
Abstract: Siemens diode Ssi L28 siemens BSt P45 SIEMENS BST n61 SIEMENS BST siemens ssi k38 diode ssi L28 SIEMENS BST L35 SIEMENS BST p49 thyristor aeg
Text: Cross reference list I Components of eupec with high power and/or high reverse voltage mainly come from the former Siemens programme, however, in future with new type designation: Si emensDesignation eupecDesignation Phase control thyristors BSt R68L BSt T65
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