2SA1279
Abstract: 2SC3239
Text: - T X ^ H T H T r O T ^ R r r T T W T Ö T - 9097250 T O S H IB A "st Fe^ totthsq oaD7acii 3 <D I S C R E T E / O P T O SILICON PNP EPITAXIAL TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10l3 MAX. FEATURES: 03.2x018
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2SC3239
10l3MAX.
2SA1279
2SA1279
2SC3239
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2SC3344
Abstract: a13g CQ 629 2SC334 Q1031
Text: T ^ Ï Ï X B T T t D I S C R E T L /O P T O 9097250 TOSHIBA T " DISCRETE/OPTO T 2SC3344 ò T ^ J T ó 9 7 O - p Unit in mm 1C13MAX. 7.0 0 3 .2 x 0 2 FEATURES: . Excellent Switching Times MAXIMUM RATINGS (Ta=25°c) 1.2 SYMBOL RATING . UNIT Collector-Base Voltage
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2SC3344
2SC3344
a13g
CQ 629
2SC334
Q1031
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Untitled
Abstract: No abstract text available
Text: BT TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA 39C 0 0 5 6 1 Dif| TORTES O DDDGShl 4 D I S C R E T E / O P T O O O X '< x H o X — Band Low Power Oscillator Applications- • nthti-e-t : P 0 = 10 m W (Min.) • S f t f t t t T -//_ - t - o
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S8202A
S8202A
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2SC2790
Abstract: No abstract text available
Text: y ^ H T B T T T ÏÏT S C R E T E /Ô P T O } 9097250 T O S H IB A Sb DE • 'ìO'naSG OOOTS'ìti 3 56C <D I S C R E T E / O P T O 07 59 6 0 j t > 7 -/3 2SC2790 SILICON NPN TRIPLE DIFFUSED TYPE_ INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE
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2SC2790
10IB1=
20iiseo
lllllll11tlIIIIIttIllllllllllilllltflllll
ll1l11IilillIItl1ll111l
111llllll1lllllil
2SC2790
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Untitled
Abstract: No abstract text available
Text: T O S H I B A { D I S 9097250 C R E T E T O S H IB A / O P T O T } < D IS C R E T E /O P T O > í 99D D E I T D T T S 17184 S D □ □ 1 7 1 A IT F 4 l-a | T L R C I 23 , T L R C I 24 GaAIAs RED LIGHT EMISSION FEATURES: • ULTRA-BRIGHT • All Plastic Mold Type
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TLRC123S
TLRC124*
l520mA
TLRC124
TLRC123
Ta-25ti
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3GH61
Abstract: No abstract text available
Text: 9097250 TOSHIBA <D I S C R E T E / O P T O _ FAST RECOVERY DIODE 1500V O T* 6 ^ DE I T G T T S S D DDD E SM S T TOSHIBA -CDISCRETE/OPTOJ 1S2711 39C 0 2242 Unit in Bn 1.5 A MAXIMUM RATINGS C H A R A C T E R IS T IC SYM BO L U N IT R A T IN G V rrm 1500
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1S2711
3GH61
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2SH14 toshiba
Abstract: toshiba 2sh13 2SH21 2SH13 2SH13 TOSHIBA 2SH14 2SH20 tn41a
Text: _ 9097250 TOSHIBA 39C 02370 < D IS C R E T E / O P T O D 'T- 3 5 ~-L.i T R IG G E R D E V IC E FOR T H Y R IS T O R TOSHIBA { D I S C R E T E / O P T 0} P U T 1 TN41A, TN41B 1 3T Ï Ë J t OITSSD 0Q0S37D 7 I ~ Unit in m M AXIM UM RATINGS CHARACTERISTIC SYMBOL
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TN41A,
TN41B
100/is
10jus
2SH13
2SH14
2SH20
2SH21
VB2B10
2SH13,
2SH14 toshiba
toshiba 2sh13
2SH21
2SH13 TOSHIBA
tn41a
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ir20d
Abstract: 3DH61 3JH61 1S2711 3GH61 3BH61
Text: 9097250 TOSHIBA <D IS C R E T E / O P T O _ FAST RECOVERY DIODE 39C 0 2 2 4 2 DE I T G T T H S D TOSHIBA -CDISCRETE/0PT0} 1500V 1.5A 1S2711 O T ~ 6 3_-' * DDDE54S T Unit in am M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L U N IT R A T IN G
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1S2711
20diA,
ir20d
3DH61
3JH61
1S2711
3GH61
3BH61
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D I S C R E T E / O P T 0> 9097250 ¿Toshiba T O S H IB A ^ D IS C R E T E / O P T O 99D d ËT| 16894 T □ T 7 E S □ ODlbfiTM 1 | ~ D T -S S -l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 8 3 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA
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500nA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: TO S HIBA {D IS C R E T E /O P T O } 9097250 T O S H IB A DE I 99D < D IS C R E T E /O P T O > SOTTESO D G 1 70 1 Û 17018 5 D T - ^ l- a T L Y I I 3A , T L Y I I 4 A GaAsP YELLOW LIGHT EMISSION 5mm DIAM ETER T/(T 13 /4 ) I FEATURES: . All Plastic Mold Type
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TLY113A
TLY114A
Ip-15â
lF-15mA
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TSZ2J44S
Abstract: TSZ2D44S TSZ2G44S TSZ2H44S
Text: 9097250 TOSHIBA 39C 02 383 CDI S C R E T E / O P T O O ~T~ 3i*S~ / 3 SSR NON-ZERO-CROSS TYPE) TOSHIBA {DISCRETE/OPTO} 600V T S Z 2J44S DE I T G T V E S O aQQS3fl3 S | 3T Unit in nun 2A M AXIM UM R A T IN G S C H A R A C T E R IS T IC R A T IN G SY M BO L
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TSZ2J44S
TSZ2D44S
TSZ2G44S
TSZ2H44S
TSZ2J44S
TSZ2D44S
TSZ2G44S
TSZ2H44S
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Untitled
Abstract: No abstract text available
Text: 'rìWfcp TOSHIBA { DI SC R E T E / O P T O ! 9097250 T O S H IB A Ti 99D D IS C R E T E /O P T O Ï)F| ÌO'ÌVSSO DD170SB 4 | ~ 17053 D T -H l-a i TLUGI43,TLUGI44 GaP GREEN LIGHT EMISSION 4.9mm DIAMETER(T l3 /4 f LOW PROFILE) FEATURES: . u l t r a -b r i g h t
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DD170SB
TLUGI43
TLUGI44
TLUG143
TLUG144
Ip-15mA
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TSS2G44
Abstract: TSS2J44 TSS2D44 TSS2H44 S37B vdr 1016
Text: w 9097250 T O S H IB A <D I S C R E T E / O P T O > 39G 02376 O ~J^3S-^3 SSR ZERO-CROSS TYPE TOSHIBA 1=1 - C DI S C R E T E / O P T O J T SS2J44 DE I T t H T E S D U n it in mm ,"H TSS2G 44 TSS2H 44 3 je V 500 . 4 I t (r m s ) I tsm 2 • 30(60H z) 27 (50Hz)
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TSS2J44
TSS2D44
TSS2G44
TSS2H44
TSS2G44
TSS2J44
TSS2D44
TSS2H44
S37B
vdr 1016
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE /O PT O} 9097250 TOSHIBA de T| T t m s s G sb ìjòC <D I S C R E T E / O P T O 07790 oodttto D' T-33-31 2SD798 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS. U n i t i n mm IGNITER APPLICATIONS.
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T-33-31
2SD798
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2SK794
Abstract: C1B capacita
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TO S H IB A tfo à itib a TT DE I t D T T S S O D IS C R E T E /O P T O 99D 16769 □ □ l t 7 b cl D T -3 9 ~ \3 SEMICONDUCTOR T OSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 7 9 4 (7T-M0S)
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DT-39
-100nA
300/iA
VdS-900V)
2SK794
C1B capacita
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Z5C-15
Abstract: 2SC2270 AC46C
Text: T o s h i b a o i s c r e t e /o p t o j 9097250 T O S H IB A it DE^jj T 0 T 7 E S D C D IS C R E T E / O P T O □□□751t 0 7 1'T~~ 2SC2270 SI L1CON NPN E P IT A X IA L TYPE PCT PROCESS) STROBO FLASK APPLICATIONS, Unit in mm MEDIMUM POWER AMPLIFIER APPLICATIONS.
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OT72SD
2SC2270
Z5C-15
2SC2270
AC46C
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Untitled
Abstract: No abstract text available
Text: POMONA ÎW M 1 5 0 0 E A S T N IN T H S T R E E T t PU: ITT T É LÉ P H O N E : P O M O N A , C A L IF O R N IA 909 469-2900 Fax: (909) 629-3317 T H IS IS IS S U E D IN S T R IC T C O N F ID E N C E ON CONd it j o n t h a t it i s n o t u s e d a s a b a s i s f o r m a n u
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1658-T
RG-214/U)
MIL-C-39012.
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TLUY153
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A Tï D e | =50^7250 DD17D71 b 99D < D IS C R E T E /O P T O 17071 T L U Y I 5 3 , T L U Y I 5 4 GaAsP YELLOW LIGHT EMISSION 5mm DIAMETER T 13 /4 ) FEATURES! . U L T R A -BRIGHT . All Plastic Mold Type TLUY 1 5 3 5 Light Y e l l o w T r a nsparent Lens
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DD17D71
TLUY154
TLUY153
20raA
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2SC2706
Abstract: 2Sa1146 2SA114
Text: ~5b TOSHIBA -CDISCRETE/OPTO> 9097250 T O S H IB A » F I t O T T E S D DODTEtiB T 5óC C D IS C R E T E /O P T O 07263 7^ ^ ¿3 2SA1146 SILICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. FEATURES: D 0 z.2 ±az
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2SA1146
59MAX.
2SC2706.
70MHz
2SC2706
2Sa1146
2SA114
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2SB553
Abstract: 2SD553 0732c
Text: TOSHIBA {DISCRETE/OPT0> "Sb DE I T D T 7 E S 0 D0D7357 T V 9097250 TOSHIBA <D I S C R E T E / O P T O S IL IC O N PNP T R IP L E D IF F U S E D T YPE PCT PROCESS) INDUSTRIAL APPLICATIONS _ Unit in mm >3.6±OJ3 HIGH CURRENT SWITCHING APPLICATIONS.
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D0D7357
2SD553.
-55VL50
2SB553
2SD553
0732c
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2SD877
Abstract: 9115 OPTO AC74 2SD877O
Text: "5t TÔSHÏBÂ- m f C R Ë T E / O P T O > 9097250 TOSHIBA ÎDTTâSD^DDDVôFi " SòC 0 7 8 3 9 <DIS C R E T E / O P T O Ü f S T i- ö SILICON NPN T R IP L E D IFF U S ED T Y P E INDUSTRIAL APPLICATIONS U n it in mm 015.7 MAX. 012.5 HIGH POWER AMPLIFIER APPLICATIONS.
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Untitled
Abstract: No abstract text available
Text: dF TOSHIBA { D I SC RE TE /OPT O} 9097250 TOSHIBA DISCRETE/OPTO ^ /o ò h ìltt § T D T 7ES0 DülbflTD D TS^-ìj 99D 16870 T O SH IBA SEMICONDUCTOR F IE L D EFFEC T TR A N SISTO R Y T F 6 3 1 S IL IC O N TECHNICAL DATA N C H A N N EL.MOS T Y P E (T T -M O S I)
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500nA
250uA
00A/us
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S3076
Abstract: gunn 9400 cj
Text: 3T TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA ~f Í F I l Q T T S S O OOOOSñO fi <DIS C R E T E / O P T O y ^^y -T T T -K O -»-f # n R f » - s y i ' f l Un i t : mm ° Microwave Tuning Applications C j o / C j 30 = 6 Typ.) • l f c = 60 GHz (M in .) • #
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Cjo/Cj30=
100mA
S3076
S3076
gunn
9400 cj
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12OG
Abstract: 2-21A1A
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA T b <D IS C R E T E / O P T O ' ‘ SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) DE J t U H T S S O T 2SC1195 5òC 07442 rrH HIGH VOLTAGE SWITCHING APPLICATIONS. 1 - CO h - i- 4 - -+ 0.09
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2SC1195
12OG
2-21A1A
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