Samsung ru0926h18hkc
Abstract: RU0926H18HKC ru0926h18 74188 Samsung rf module 900mhz 314 936 CH10 CH11 HP8920A Samsung rf module
Text: DATE : 1999. S P E C I F I C A T I O N PRODUCT : RF UNIT MODEL NAME : RU0926H18HKC APPROVED CHECKED WRITTEN SAMSUNG ELECTRO-MECHANICS CO., LTD. ● Head Office & Sales Dept. 314, Maetan 3 Dong, Paldal-Ku, Suwon, Kyungki-Do, Korea ● Hongkong Office 65/F, Central Plaza, 18Harbour Road
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RU0926H18HKC
18Harbour
RU0926H18HKC
900MHz
50KHz
Samsung ru0926h18hkc
ru0926h18
74188
Samsung rf module 900mhz
314 936
CH10
CH11
HP8920A
Samsung rf module
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RU0902B18HKB
Abstract: Samsung rf module RU0902 B 892 s transistor B 892 CH10 CH11 HP8920A 90295 Samsung rf module 900mhz
Text: DATE : 1999. S P E C I F I C A T I O N PRODUCT : RF UNIT MODEL NAME : RU0902B18HKB APPROVED CHECKED WRITTEN SAMSUNG ELECTRO-MECHANICS CO., LTD. ● Head Office & Sales Dept. 314, Maetan 3 Dong, Paldal-Ku, Suwon, Kyungki-Do, Korea ● Hongkong Office 65/F, Central Plaza, 18Harbour Road
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RU0902B18HKB
18Harbour
RU0902B18HKB
900MHz
50KHz
Samsung rf module
RU0902
B 892 s
transistor B 892
CH10
CH11
HP8920A
90295
Samsung rf module 900mhz
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Samsung rf module
Abstract: HP8920A Samsung rf module 900mhz parametric audio -digital 900MHZ RF module 900MHz samsung Date of manufacture SAMSUNG RU0902B14HAC RU0902
Text: DATE : 2000.08.16 S P E CI F I C A T I ON S PRODUCT : RF UNIT MODEL NAM E : R U 0 9 2 6 H 1 4 H A C RU0902B14HAC A PP RO VED CH EC KE D WR IT TE N SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82 - 31 - 210 - 6945
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RU0902B14HAC
900MHZ
200KHZ
Samsung rf module
HP8920A
Samsung rf module 900mhz
parametric audio -digital
RF module 900MHz samsung
Date of manufacture SAMSUNG
RU0902B14HAC
RU0902
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HP8920A
Abstract: Samsung Electro-Mechanics 15MHZ 900MHZ
Text: DATE : 2000.05.23 S P E CI F I C A T I ON PRODUCT : RF UNIT MODEL NAM E : R U 0 9 0 3 B 1 4 H A B A PP RO VED CH EC KE D WR IT TE N SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82-331- 210 - 6945 FAX : 82-331- 210 - 6554
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900MHZ
200KHZ
HP8920A
Samsung Electro-Mechanics
15MHZ
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HP8920A
Abstract: Samsung Electro-Mechanics 15MHZ 900MHZ Samsung rf module 900mhz
Text: DATE : 2000.05.23 S P E CI F I C A T I ON PRODUCT : RF UNIT MODEL NAM E : R U 0 9 2 7 H 1 4 H A B A PP RO VED CH EC KE D WR IT TE N SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82-331- 210 - 6945 FAX : 82-331- 210 - 6554
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900MHZ
200KHZ
HP8920A
Samsung Electro-Mechanics
15MHZ
Samsung rf module 900mhz
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25B22
Abstract: No abstract text available
Text: BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 50 B 1000 V 2A 8Ω TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage
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O-220
C67078-A1307-A4
25B22
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A1307
Abstract: tp-730
Text: BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 50 C 1000 V 2.3 A 6Ω TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage
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O-220
C67078-A1307-A5
A1307
tp-730
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A1307
Abstract: C67078-A1307-A3 BUZ50A
Text: BUZ 50 A SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 50 A 1000 V 2.5 A 5Ω TO-220 AB C67078-A1307-A3 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage
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O-220
C67078-A1307-A3
A1307
C67078-A1307-A3
BUZ50A
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C67078-A1307-A3
Abstract: C67078-A1307-A4 C67078-A1307-A5 buz50
Text: SIPMOS Power Transistors BUZ 50 A BUZ 50 B, BUZ 50 C ● N channel ● Enhancement mode Type VDS ID RDS on Package 1) Ordering Code BUZ 50 A 1000 V 2.5 A 5.0 Ω TO-220 AB C67078-A1307-A3 BUZ 50 B 1000 V 2.0 A 8.0 Ω TO-220 AB C67078-A1307-A4 BUZ 50 C
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O-220
C67078-A1307-A3
C67078-A1307-A4
C67078-A1307-A5
C67078-A1307-A3
C67078-A1307-A4
C67078-A1307-A5
buz50
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se617
Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
Text: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents
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A13052EJ6V0BL00
A13052EJ6V0BL
se617
SE641
transistor f423
sd667
transistor hh 004
transistor f422
bv0T
F423
n010x
L442
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transistor A1011
Abstract: a1273 transistor scheme A1266 a1273 a1273 transistor DATA a1273 transistor a1232 transistor a1266 A1306 TRANSISTOR transistor A1267
Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions
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80C186EC/80C188EC
82C59A
Index-10
transistor A1011
a1273 transistor scheme
A1266
a1273
a1273 transistor DATA
a1273 transistor
a1232
transistor a1266
A1306 TRANSISTOR
transistor A1267
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A1306 TRANSISTOR
Abstract: A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor
Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Order Number 272047-003 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including
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80C186EC/80C188EC
82C59A
Index-10
A1306 TRANSISTOR
A1273
A1266
transistor a1266
a1273 transistor
a1232
transistor A1267
transistor a1276
a1273 transistor scheme
a1273 y transistor
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Samsung Electro-Mechanics
Abstract: HP8920A marking D9 diode phase*detector ru2475b18haa ND15
Text: APPROVAL APP LIC ABL E CUS TOM ER MOD EL RU 240 3H1 8HA A RU 247 5B1 8HA A TIT LE No. MO DEL N o. PO INT D ES CRI BE D AS A BOV E: TH IS RF -UN IT IS D ESI GNE D FOR 2 .4G Hz CO RDL ESS P HON E. WE S UBM IT AP PRO VAL F OR YO UR EX AMI NAT ION A S FOL LOW .
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MA1002 digital LED Clock Module
Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
Text: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH
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1-800-DIGI-KEY
1-800-DIGI-KEY)
MA1002 digital LED Clock Module
MA1002
Robinson Nugent CATALOG
NSB7881
equivalent transistor P347
t110 94v 0
MEPCO 5043
LN543RA
m7104
Lm13800
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type Yds b flDS on Package Ordering Code BUZ 50 C 1000 V 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vt)S Drain-gate voltage ^DGR Values
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O-220
C67078-A1307-A5
bridJJ40
235b05
fl235bG5
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IR4060
Abstract: BUZ50 C67078-A1307-A4
Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vbs to BUZ 50 B 1000 V 2A flbston 8 Í2 Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage ''DGR
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O-220
C67078-A1307-A4
S35b05
fl235bQS
IR4060
BUZ50
C67078-A1307-A4
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buz50
Abstract: BUZ50B
Text: SIEMENS BUZ 50 A BUZ 50 B, BUZ 50 C SIPMOS Power Transistors • • N channel Enhancement mode Type ^DS Id ^DS on Package ’ > Ordering Code C67078-A1307-A3 BUZ 50 A 1000 V 2.5 A 5.0 Q TO -220 AB BUZ 50 B 1000 V 2.0 A 8.0 a TO -220 AB C67078-A1307-A4
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C67078-A1307-A3
C67078-A1307-A4
C67078-A1307-A5
buz50
BUZ50B
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BUZ 336
Abstract: No abstract text available
Text: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 A Vos 1000 V b 2.5 A RfiSlon 5C2 Package Ordering Code TO-220 AB C67078-A1307-A3 Maximum Ratings Parameter Symbol Drain source voltage W)S Drain-gate voltage '' dgr
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O-220
C67078-A1307-A3
BUZ 336
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 Pin 3 Type Vds b f f DS on Package Ordering Code BUZ 50 A 1000 V 2.5 A 5 Í2 TO-220 AB C67078-A1307-A3 Maximum Ratings Symbol Parameter Drain source voltage Vds Drain-gate voltage
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O-220
C67078-A1307-A3
235b05
fl23SL
0535bOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2
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O-220
C67078-A1307-A4
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transistor BD 263
Abstract: No abstract text available
Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vds BUZ 50 B 1000 V 2A flbsion Package Ordering Code 8 Í2 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage ^DGR Rqs = 20 k£2
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O-220
C67078-A1307-A4
235b05
fl235bGS
transistor BD 263
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 C Vds 1000 V Id 2.3 A ^DS on Package Ordering Code 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Values
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O-220
C67078-A1307-A5
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ne5532 thd
Abstract: MS 1307 tda databook SAA7310 TDA1307 TDA1547 TPM Relay 5VDC SDIP42 marking code 4h diode toa130
Text: Philips Semiconductors Preliminary specification High-performance bitstream digital filter TDA1307 FEATURES 1N 11 1 1 1 III • Multiple form at inputs: l2S, Sony 16, 18 and 20-bit • 8-sample interpolation error concealment • Digital mute, attenuation -1 2 dB
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TDA1307
20-bit
7110flBb
DCna37^
ne5532 thd
MS 1307
tda databook
SAA7310
TDA1307
TDA1547
TPM Relay 5VDC
SDIP42
marking code 4h diode
toa130
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A1306 TRANSISTOR
Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)
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O-220
T0-220
C67078-
A1300-A2
A1329-A2
A1301-A2
BUZ11
A1301-A3
A1330-A3
A1331-A2
A1306 TRANSISTOR
t a1306
A1306A
A3206A
A1316-A3
A1318
A1309
a1328
A1013
A1300 transistor
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