1n4295
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N4295 A TEMPERATURE COMPENSATED REFERENCE DIODES MAXIMUM RATING Characteristic Value Maximum zener current, steady state (T = 75°C, free air) 38mAdc Maximum steady state power dissipation ≤ 75°C, free air Derate above 75°C 0.4 watts
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1N4295
38mAdc
1N4295
DO-35
MIL-PRF-19500,
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MS610
Abstract: No abstract text available
Text: Three Phase Rectifier Bridges PSD 75 IdAVM = 95 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 75/08 PSD 75/12 PSD 75/14 PSD 75/16 PSD 75/18 Symbol Test Conditions IdAV IFSM T C = 85°C, module
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Untitled
Abstract: No abstract text available
Text: MWI 75-06 A7 MWI 75-06 A7 T IC25 = 90 A VCES = 600 V VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 1 2 5 6 9 10 T NTC 16 15 14 3 4 11 12 7 8 E72873
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E72873
MWI7506A7
20070912a
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diode A7
Abstract: E72873 A7 DIODE
Text: MWI 75-06 A7 MWI 75-06 A7 T IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 1 2 5 6 9 10 T NTC 16 15 14 3 4 7 8 11 12 E72873
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E72873
MWI7506A7
20070912a
diode A7
E72873
A7 DIODE
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A7 DIODE
Abstract: diode a7 75-06A7T
Text: MWI 75-06 A7 MWI 75-06 A7 T IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4
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MWI7506A7
A7 DIODE
diode a7
75-06A7T
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NTC resistor T5
Abstract: MKI 75-06 A7
Text: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A VCES = 600 V VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 10 D5 16 14 T2 T T6 D2 3 11 4 12
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MWI7506A7
NTC resistor T5
MKI 75-06 A7
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NTC resistor T5
Abstract: A7t diode diode a7t MKI 75-06 A7T
Text: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A = 600 V VCES VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 18 D5 16 14 T2 T T6 D2 3 11 4 12
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MWI7506A7
NTC resistor T5
A7t diode
diode a7t
MKI 75-06 A7T
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50N60
Abstract: 50n50 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B
Text: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW
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100ns
120ns
50N50BU1
50N60BU1
50N50
50N60
O-264
IXGK50N50BU1
IXGK50N60BU1
ixgk50n60bu1
G 50N60
50n5
IXGH50N60B
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Untitled
Abstract: No abstract text available
Text: SWITCHING, GENERAL PURPOSE AND STABISTOR DIODES PRODUCT SELECTION GUIDE SWITCHING H 'H i " U# if f * ? » T *0 7 ? ? , T IB /0 0 • new *» 20 30 30 30 30 35 40 40 40 40 40 70 75 75 75 75 75 75 75 75 75 75 75 75 75 75 80 85 85 100 100 100 100 100 200 200
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1N4451
100mA
200mA
400mA
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1N4148WX
Abstract: No abstract text available
Text: MCC 3 50 m W S W ITC H IN G DIODE / S O T-23 / SURFACE M O U N T _ Package MMBD4148 MMBD4448 BAS 16 BAV70 MMBD7000 BAV99 BAW56 1* 1* 1* 3* 4* 4* 2* 100 100 100 75 too 75 75 0.025 2.5 1.0 2.5 1.0 2.5 2.5 20 75 75 75 50 75 75 .855 1.00 1.25
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MMBD4148
MMBD4448
BAV70
MMBD7000
BAV99
BAW56
1N4148W
BAS16W
1N4148WX
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DIODE 22-35 L
Abstract: No abstract text available
Text: □IXYS MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA Fast Recovery Epitaxial Diode FRED Module Preliminary data RSM RRM T yp e V MEA75-12 DA 1200 1200 M EK 75-12 DA 1 Ö! 2 3 fc ü i TestC onditions 1 2 fc Ö ! M axim um Ratings U rm TBD U sM T VJ = 45°C; t = 10 ms (50 Hz), sine
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O-240
MEA75-12
DIODE 22-35 L
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DIODE 1N54
Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Text: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36
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1N34A
1N38A
1N38B
1N52A
1N54A
1N57A
1N58A
1N60A
1N63A
-100V
DIODE 1N54
1N60 germanium diode
1N34
1N542
1N48 diode
diode 1N69a
1n81a
1N75
1N68
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DIODE F22
Abstract: 1300 3d
Text: ptot VCE0 VCB0 VCEX* T/v=25°C min. <W> V 10 tt 1300* 10 tt 1500* 10 tt 1500* t 1700* 10 t 12.5 # 1300* 12.5 tt 1500* 12.5 t t 1500* t 1500* 12.5 t t 1700* 12.5 t 60 400 60 400 60 330 330 60 400 60 400 60 1300 75 75 1500 1700 75 400 90 400 90 330 90 90 330
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O-220
DIODE F22
1300 3d
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Tunnel diode
Abstract: 4525g "tunnel diode" tunnel diodes 7525G D 4515 diode germanium 4515G GERMANIUM TUNNEL DIODE tunnel diode high frequency
Text: TM ^ bF | E 5 7 Ö E S 5 0000D03 2578252 CU ST OM COMPONENTS 1 |~~ T - ö ' 7 - If 9 4 D 00 0 0 3 INC AMPLIFIER DIODES GERMANIUM fro rm RS Part Number GHz Min ohms ohms 7515G 7520G 7525G 7530G 7540G 15 20 25 30 40 (Typ) 75 75 75 75 75 6015G 6020G 6025G 6030G
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0000D03
7515G
7520G
7525G
7530G
7540G
6015G
6020G
6025G
6030G
Tunnel diode
4525g
"tunnel diode"
tunnel diodes
D 4515
diode germanium
4515G
GERMANIUM TUNNEL DIODE
tunnel diode high frequency
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DIODE S51
Abstract: 5070d diode 513 S5 s513 5030a DIODE S5
Text: Model S-5000 Dip Rotary Code Switch W / Built In Resistors A nd/O r Diode Array 11 m m Square SP E C IF IC A T IO N S G eneral Operating Temp. Range -25°C T O + 75"C Storage Temp. Range -25°C T O +75°C Sealing Method O Ring Sealed Electrical Contact Rating
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S-5000
S-5030A
S-501
S-5031
S-513
S-5050A
S-5070A
S-5051
S-5071
DIODE S51
5070d
diode 513 S5
s513
5030a
DIODE S5
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DIODE S5
Abstract: s501 diode
Text: Model S-5000 Dip Rotary Code Switch W / Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range : -25°C T O +75°C Storage Temp. Range : -25°C T O +75°C Sealing Method : O Ring Sealed Electrical Contact Rating Non-Switching
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S-5000
S-5110A~
-5I30A
S-513
S-5050A-
S-5070A-
S-505IA-
S-507IA-
S-5150A-
DIODE S5
s501 diode
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Untitled
Abstract: No abstract text available
Text: n L MLO 75 MMO 75 v v c I I A I o t AC Controller Modules |RMS = 86 A V RRM = 1200-1600 V v RSM V RRM V DSM V DRM V V 1200 1600 1200 1600 Symbol MLO Type G1 \ MLO 75-12io1 MLO 75-16io1 86 62 39 A A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine 1150 1230 A A t = 10 ms (50 Hz), sine
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75-12io1
75-16io1
75/MLO
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1N4775
Abstract: 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 GDGG020
Text: AMERICAN POWER DEVICES 53E D 073713S 0000020 S •T^TPo5 TCZENER DIODES c DO-7 Case 250 mW, TC DO-7 Case Typ ef Test Current Maximum^ Dynamic Impedance Voltage Temperature Stability vz + IzT ZZT @ IZT AVzrMax. V mA n mV °C O to + 75 -5 5 t o +100 0 t O + 75
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073713S
GDGG020
1N4775
1N4775A
1N4776
1N4776A
1N4777
1N4777A
1N4778
1N4778A
1N4779
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EY86
Abstract: HX33 HX31 diode d5c HS40-4 diode D6E HS40A ZC0300 ZC0310 1N5149
Text: S ILIC O N DIODES Step Recovery Diodes R .F. Po w er Output Type M ax. V r d .c. volts 1N 5149 1N 5150 1N5151 1N 5152 1N5153 1N5154 1N5155 ZC 62 0 ZC 03 0 0 ZC 03 1 0 80 80 75 75 75 35 35 35 75 40 c to t * pF Min. 5-0 50 50 50 50 1 0 1 0 0-6 2-5 1 -9 M ax.
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1N5149
1N5150
1N5151
1N5152
1N5153
1N5154
1N5155
ZC620
ZC0300
ZC0310
EY86
HX33
HX31
diode d5c
HS40-4
diode D6E
HS40A
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SKM 75 Gb 124 IGBT
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits VQE 23 F Semitrans M SKM IGBT FF 450
Text: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges R ge = 20 k £ l T oase = 25/75 °C T oase = 25/75 °C; tp = 1 ms Ptot Tj, Tstg) per IG B T , T oaSe = 25 °C Visol AC, 1 min. DIN 40040 DIN IEC 68T.1 humidity climate
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BSM 225
Abstract: siemens igbt BSM 50 gb 100 d siemens igbt BSM 75 gb 100
Text: SIEMENS BSM 75 GB 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data VCE = 1000 V l c = 2 x 100 A at 7 ^ = 2 5 C / c = 2 x 75 A at T c = 80 C • • • • • Power module Half-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate
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C67076-A2104-A2
C67076-A2003-A2
BSM 225
siemens igbt BSM 50 gb 100 d
siemens igbt BSM 75 gb 100
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ETX 40
Abstract: InGaAs Epitaxx APD epitaxx ETX1000T epitaxx APD INGAAS avalanche EPITAXX InGaAs Epitaxx APD ETX ingaas apd photodetector
Text: IDE D | 33b04Dfc. ODQQDSfl 5 EPITAXX INC HIGH SPEED InGaAs PIN PHOTODETECTORS Part Number ETX60B ETX 75 CER-H ETX 75T . ETX100TL ETX 300T •' ETX 75 FJ/FC T - Dark Size Capacitance i/umj Current nA . fpF) 0.1 . . 60 . 0.3 ~ •• ; 75 . • ' Vi , 0.1 •'
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33b04Dfc.
ETX60B
ETX100TL
O-46lens
10OTL
300TL
ETX500T
1000T
2000T5
3000T5
ETX 40
InGaAs Epitaxx APD
epitaxx
ETX1000T
epitaxx APD
INGAAS avalanche EPITAXX
InGaAs Epitaxx APD ETX
ingaas apd photodetector
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Untitled
Abstract: No abstract text available
Text: FEATURES - JJ tB 15 300 MHz • 5V CMOS Driver MODEL NO. DS0097 ■ Small .75 Sq. Package PIN Diode Transfer Switch RF4 .75 I .20 .20 £L PART ID E N T IF IC A T IO N T V r .018 D IA 24 P L A C E S .XX = .0 2 .X X X = .0 1 0 LOQIC TABLE RF1 TO RF4 RF2 TO RF3
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DS0097
TRAKSJT10N
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backward diode
Abstract: "backward diode" SI 4606 4606
Text: <£? ÎÛ C. <Si:mLconductou _ WO I otw $ im i himinghim, M w uhuM lli 01701 Silicon Switching Diodes * Xa Tri* Wo. tr 1X4148 Irr naec Capacitano* . Zero Volt* Pf 4 75 ua 100 V 1.0 aa 10 rn 25 T" 20 1X4149 75 100 1.0
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1X4149
1K4444
1X4727
1S4861
1M862
II15727
1X4455
backward diode
"backward diode"
SI 4606
4606
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