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    T-AMP 2N3055 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    T-AMP 2N3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ15016

    Abstract: 2n3055a MJ15015 2N3055 NPN Transistor
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High−Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


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    PDF 2N3055. 2N3055A MJ15015 MJ15016 2N3055A MJ15015, MJ15015 MJ15016 2N3055 NPN Transistor

    2N3055* motorola

    Abstract: mj15016 motorola 2n3055 motorola 1N6073 2N3055 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A
    Text: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


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    PDF 2N3055A/D 2N3055A MJ15015* 2N3055 MJ2955. MJ2955A MJ15016* 2N3055A/D* 2N3055* motorola mj15016 motorola 2n3055 motorola 1N6073 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A

    mj15015g

    Abstract: No abstract text available
    Text: 2N3055AG NPN , MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


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    PDF 2N3055AG MJ15015G MJ15016G 2N3055. 2N3055AG MJ15015G, MJ15016G 2N3055A/D mj15015g

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    PDF 2N3055/D* 2N3055/D

    2N3055

    Abstract: MJ2955 mj15015 MJ15016 MJ2955 mexico 1N6073 2N3055A MJ2955A
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


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    PDF 2N3055A MJ15015 2N3055 MJ2955. MJ2955A MJ15016 r14525 2N3055A/D MJ2955 mj15015 MJ15016 MJ2955 mexico 1N6073 2N3055A MJ2955A

    1N6073

    Abstract: 2N3055 2N3055A MJ15015 MJ15016 2N3055A-D 2N30
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High-Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


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    PDF 2N3055A MJ15015 MJ15016 2N3055. r14525 2N3055A/D 1N6073 2N3055 2N3055A MJ15015 MJ15016 2N3055A-D 2N30

    MJ15015

    Abstract: 2n3055a datasheet 2n3055AG MJ15016 MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


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    PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D 2n3055a datasheet 2n3055AG MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG

    MJ15015

    Abstract: 2N3055A MJ15016 MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055
    Text: 2N3055A NPN MJ15015, MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


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    PDF 2N3055A MJ15015, MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D 2N3055A MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055

    Untitled

    Abstract: No abstract text available
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


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    PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D

    2N3055 MOTOROLA

    Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power transistor 2n3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 2N3055 power circuit
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power transistor 2n3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 2N3055 power circuit

    2N3055

    Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2n3055 pnp 2N3055 power circuit 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 2N3055-D 2n3055 circuit 2n3055 application
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2n3055 pnp 2N3055 power circuit 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 2N3055-D 2n3055 circuit 2n3055 application

    MJ2955 300 watts amplifier circuit diagram

    Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • http://onsemi.com


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    PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR

    2n3055

    Abstract: 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 MJ2955 300 watts amplifier
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


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    PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier

    2n3055

    Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


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    PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram

    2N3055 power amplifier circuit

    Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPAN
    Text: Complementary Silicon Power Transistors NPN 2N3055 * PNP MJ2955 * . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — • *ON Semiconductor Preferred Device


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    PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPAN

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − •


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    PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com


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    PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055

    MJ15015 TRANSISTOR REPLACEMENT GUIDE

    Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


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    PDF 2N3055 MJ2955. 2N3055A MJ15015* MJ2955A MJ15016* TIP73B TIP74 TIP74A TIP74B MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051

    2n3055 motorola

    Abstract: motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501
    Text: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501*


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    PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500/D* MJ2500/D 2n3055 motorola motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501

    texas 2n3055

    Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    PDF 2N3055 MJ2955* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C texas 2n3055 BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100

    mje15033 replacement

    Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver


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    PDF 2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement

    SDT9207

    Abstract: SDT9202 SDT9209 SDT9204 SDT9208 SDT9203 SDT9205 SDT9201 2N3236 2N6046
    Text: 39 SILICON POWER TRANSISTORS CURREN T GAIN SATURATION VOLTAGES s> TYPE CASE NUMBER TYPE VCBO V VCEO V IV V EBO hFE MIN. I MAX. VCE <s> 'c A V CE s V V BE:(s) I V *C A I *B A 15 AMP SILICON SIPN 2 N3055 2N3235 2N3236 TO-3 TO-3 TO-3 100 65 90 60 55 90 7.0 7.0


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    2N30ss

    Abstract: MJ15015 MJ15016 2N3055A MJ15015 TRANSISTOR 70 M 15 B MJ2955 TRANSISTOR 2n3055 audio output circuit
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA UDII Complementary Silicon High-Power Transistors 2N3055A . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, Inverters, or


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    PDF 2N3055 MJ2955. 2N3055A J15015* J2955A J15016* 2N305SA, MJ2955A MJ15015, MJ15016 2N30ss MJ15015 MJ15016 MJ15015 TRANSISTOR 70 M 15 B MJ2955 TRANSISTOR 2n3055 audio output circuit

    MJ2955 TRANSISTOR

    Abstract: pnp transistor 2N3055 2n3055 collector characteristic curve 2N3055 Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve
    Text: SOLID STATE INC. 46 FARRAND STR EE T BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com COMPLEMENTARY SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching applications NPN PNP 2N3055 MJ2955 FEA TU RES: * Power Dissipation - PD = 115W @ Tc = 25°C


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    PDF 2N3055 MJ2955 2N3055 MJ2955 MJ2955 TRANSISTOR pnp transistor 2N3055 2n3055 collector characteristic curve Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve