Untitled
Abstract: No abstract text available
Text: MBR40H100WTG Switch Mode Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg
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MBR40H100WT
Abstract: MBR40H100WTG B40H100
Text: MBR40H100WT SWITCHMODE Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg
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MBR40H100WT
MBR40H100WT/D
MBR40H100WT
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MBR40H100WT
Abstract: MBR40H100WTG
Text: MBR40H100WT SWITCHMODE Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg
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MBR40H100WT
MBR40H100WT/D
MBR40H100WT
MBR40H100WTG
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B40H100
Abstract: MBR40H100WT MBR40H100WTG
Text: MBR40H100WT SWITCHMODE Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg
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MBR40H100WT
MBR40H100WT/D
B40H100
MBR40H100WT
MBR40H100WTG
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B40H100
Abstract: No abstract text available
Text: MBR40H100WT SWITCHMODE Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg
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MBR40H100WT
MBR40H100WT/D
B40H100
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Untitled
Abstract: No abstract text available
Text: SYNCHRONOUS ETHERNET IDT WAN PLL IDT82V3390 DATASHEET Version - 2 Datasheet July 14, 2011 DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry
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IDT82V3390
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Untitled
Abstract: No abstract text available
Text: SYNCHRONOUS ETHERNET IDT WAN PLL IDT82V3390 DATASHEET Version - 1 Preliminary Datasheet April 15, 2011 DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry
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IDT82V3390
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9332 eprom
Abstract: No abstract text available
Text: SYNCHRONOUS ETHERNET IDT WAN PLL IDT82V3390 DATASHEET Version - 2 Datasheet July 14, 2011 DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry
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IDT82V3390
9332 eprom
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500w audio amplifier circuit diagram
Abstract: ZVT 440 zvt boost converter high power FERRITE TRANSFORMER SLUA146A SATURABLE CORE Saturable Core Square Wave Oscillator uc3855 Application Note UC3855A 95160
Text: Application Report SLUA146A - May 1996 − Revised April 2004 UC3855A/B High Performance Power Factor Preregulator Jim Noon System Power ABSTRACT The trend in power converters is towards increasingly higher power densities. Usually, the method to achieve this is to increase the switching frequency, which allows a reduction in the
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SLUA146A
UC3855A/B
500w audio amplifier circuit diagram
ZVT 440
zvt boost converter
high power FERRITE TRANSFORMER
SATURABLE CORE
Saturable Core Square Wave Oscillator
uc3855 Application Note
UC3855A
95160
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panasonic inverter dv 707 manual
Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594
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power tmos
Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
Text: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003 SCILLC, 2003 Previous Edition 2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
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Aug-2003
power tmos
936G
PR 751S
K1 MARK 6PIN SOT-363
carrier chiller
mc10116
MC10H210
mmsf5n03hd
0j sod-523
CASERM
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induction cooker fault finding diagrams
Abstract: induction cooker schematic diagram th 20594 JEDEC JESD22-B116 free datasheet transistor said horizontal tt 2222 8 PIN DIL 20594 JEDEC JESD22-B109 JESD22-B108A schematic diagram induction cooker induction cooker coil design
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ27L0001-0101
induction cooker fault finding diagrams
induction cooker schematic diagram
th 20594
JEDEC JESD22-B116 free
datasheet transistor said horizontal tt 2222
8 PIN DIL 20594
JEDEC JESD22-B109
JESD22-B108A
schematic diagram induction cooker
induction cooker coil design
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ZNR 10K 271
Abstract: ZNR 10K 271 data sheet SCHEMATIC 10kw POWER SUPPLY WITH IGBTS znr varistor 10k 201 znr 10k varistor metal oxide varistor znr znr k 270 mitsubishi IGBT 10kW detail ZNR 10 K 241 U power supply 400v circuit diagram
Text: DIP/SIP-IPM Power Devices Application Note Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Table of Contents Application Information 1.0 Introduction to the DIP/SIP-IPM Family . 1 1.1 The DIP/SIP-IPM Concept . 1
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6MBP75RS120
Abstract: CLK70AA160 PVC7516 6mbp50rs120 Thermistor 15SP 6mbp150rs060 d6650 CLK100AA160 ps12047 PD10016A
Text: GEI-100364C Supersedes GEI-100364B GE Fuji Drives USA AF-300 P11 User’s Guide 1999, 2000 by GE Fuji Drives USA, Inc. All rights reserved. These instructions do not purport to cover all details or variations in equipment, nor to provide every possible
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GEI-100364C
GEI-100364B
AF-300
0-F11
RF3180-F11
RF3100-F11,
RF3180-F11)
RF3280-F11,
RF3400-F11)
RF3880-F11)
6MBP75RS120
CLK70AA160
PVC7516
6mbp50rs120
Thermistor 15SP
6mbp150rs060
d6650
CLK100AA160
ps12047
PD10016A
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carrier chiller
Abstract: BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook
Text: CASERM/D Rev. 0, Sep-2000 Semiconductor Packaging and Case Outlines ON Semiconductor Reference Manual and Design Guide Semiconductor Packaging and Case Outlines Reference Manual and Design Guide CASERM/D Rev. 0, Sep–2000 SCILLC, 2000 “All Rights Reserved’’
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Sep-2000
r14525
carrier chiller
BRIDGE RECTIFIER SMD
oscilloscopes manual
SOT-353 Mark va
ECL Handbook
smd diode Cathode is indicated by a blue band mar
TO-204aa MICROSEMI PACKAGE OUTLINE
Microsemi Catalog 2000
RCA 559 TO3
MECL System Design Handbook
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Power Bipolar Transistors
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOT78 T0-220AB SOT82 SOT186(10-220) S O U 86A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) 754 755 756 757 758 759 SOT429 (TO-247) SOT43Q (TOP3L) 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22QAB
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T0-220AB)
OT186
O-220AB)
OT199
OT399
OT429
O-247)
OT43Q
O-22QAB
O-247
Power Bipolar Transistors
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austerlitz
Abstract: AN-951 AN997 Redpoint
Text: Mounting Guidelines for the SUPER-220 AN-951 by Andrew Sawle and Arthur Woodworth The impressive gains in power density born from the development of the ‘SUPER’ type power packages, i.e. the SUPER-247, has lead to a similar development of the T0-220 package. The removal of the hole and incorporation
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SUPER-220
AN-951)
SUPER-247,
T0-220
SUPER-220.
O-247.
25-50N
austerlitz
AN-951
AN997
Redpoint
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Untitled
Abstract: No abstract text available
Text: GEC PL E SSEY w , S E M I C O N D U C T O R S DS4412-1.2 DSF8035SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS 3500V RRM 335A ¡F AV 3500A ' fsm v • Snubber Diode For GTO Applications. 400(iC 4.0|JS Q r FEATURES ■ Double side cooling. ■ High surge capability.
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DS4412-1
DSF8035SK
DSF8035SK35
03G14S
37bfiSS5
GD3014b
37b6522
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D476
Abstract: D-476 i6ctq 16CTQ 16CTQ080 D139 7850a
Text: PD-2.192A International ^ Rectifier i 6Ct q . s e r i e s SCHOTTKY RECTIFIER 16 Amp Description/Features Major Ratings and Characteristics Characteristics 16CTQ. Units *F AV Rectangular waveform 16 A 80 to 100 V Irsm tp-5jjssine 850 A Vp 0.58 V -55 to 175
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16CTQ.
16CTQ
T0-220
D-141
Vd-25
D-142
D476
D-476
i6ctq
16CTQ080
D139
7850a
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SCHEMATIC DIAGRAM OF POWER SAVER DEVICE
Abstract: power saver schematic diagram SCHEMATIC DIAGRAM OF electrical saver BV68 1530Q BM138 D9323 schottky transistor spice I1211 PIN DIODE .cir spice
Text: Special Functions RC4447 RC4447 Quad PIN Diode Switch Driver Features • ■ ■ ■ ■ ■ ■ ■ currents of the RC4447 are closely controlled through the use of Si-Cr thin-film resistor networks, resulting in repeatable ac character istics and a stable dc bias point. Well-matched
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RC4447
RC4447
Mil-Std-883
RM4447
20-lead
SCHEMATIC DIAGRAM OF POWER SAVER DEVICE
power saver schematic diagram
SCHEMATIC DIAGRAM OF electrical saver
BV68
1530Q
BM138
D9323
schottky transistor spice
I1211
PIN DIODE .cir spice
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Untitled
Abstract: No abstract text available
Text: in te r r ii HIP6003 S e p te m b e r 1 9 9 7 Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor The HIP6003 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive an
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HIP6003
HIP6003
AN9664.
C5-C12
T60-52;
17AWG
T44-52;
18AWG
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Untitled
Abstract: No abstract text available
Text: in te l. SPECIAL ENVIRONMENT 80960CA-25, -16 32-BIT HIGH-PERFORMANCE EMBEDDED PROCESSOR • Two Instructions/Clock Sustained Execution • Four 5 9 M bytes/s DMA Channels with Data Chaining • Demultiplexed 32-bit Burst Bus with Pipelining • 32-bit Parallel Architecture
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80960CA-25,
32-BIT
64-bit
4ft2bl75
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Untitled
Abstract: No abstract text available
Text: HIP6005B Semiconductor February 1999 Data Sheet Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor T he H IP 6005B pro vid es com p le te con tro l and pro te ction for a D C -D C c o n ve rte r op tim ize d fo r high -perform a nce File Number
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HIP6005B
6005B
1-800-4-HARRIS
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HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED
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BUZ905D
BUZ906D
-100mA
-160V
-200V
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
2SJ56 2sk176
mosfet cross reference
2sk135 audio application
lateral mosfet audio amplifier
BUZ901P
2sJ50 mosfet
hitachi mosfet power amplifier audio application
BUZ900P
BUZ900D
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