TRANSISTOR 9642
Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
IRG4BC20F
IRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
TRANSISTOR 9642
9544 transistor
T0247 package
what is fast IGBT transistor
IRG4PC50U
Equivalent transistors for IRG4PC50U
IRG4BC20FD 600V 16 TO220
IRGPC40U
irg4ph50ud
IRGB440U
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9544 transistor
Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
assIRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
IRG4BC30UD
9544 transistor
TRANSISTOR 9642
IRG4PC50U
irg4ph50ud
igbt failure
IRG4PC40UD2
HTGB
IRGPH60UD2
IRGBC20FD
rectifier IGBT
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CLP212s
Abstract: ICS Sensors 1220 FT 147 M 78215 T0218 T0247 T092 ft 103 CLP212T 78315
Text: THE MAX CLIP SYSTEM ™ THE THE PROPRIETARY PROPRIETARY THERMAL THERMAL MANAGEMENT MANAGEMENT SOLUTION SOLUTION FOR FOR ALL ALL POWER POWER COMPONENTS COMPONENTS AAVID THERMALLOY ONE COOL IDEA AFTER ANOTHER THE MAX CLIP SYSTEM™ FOR POWER TRANSISTORS How do you optimize the thermal management of power transistors while saving labor and costs?
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IRFZ44G
Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics
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IRFIZ34N
IRFIZ44N
IRFIZ48N
IRFI1010N
IRFI520N
IRFI530N
IRFI1310N
IRLI3705N
IRLIZ24N
IRLIZ44N
IRFZ44G
IRF840G
IRFZ34G
IRFBC30G
IRF9540G
IRF640G
IRFBC40G
IRFP140 equivalent
transistor 9721
transistor IRFP140N
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PHW7N60
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PINNING - SOT429 T0247 PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance Id F*tol RdS(ON) PIN CONFIGURATION MAX. UNIT 600 7 147 1.2
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PHW7N60
OT429
T0247)
PHW7N60
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T0247
Abstract: 8N60M SW8600 Z357 L4080B l3540 L5545 L5050BN L3580 M/ve09 240
Text: Power Management Division Please note that our 4th Generation power MOSFETs are currently available in Europe only. T0264 Power Management Division PowerMOS IV plastic power M OSFETs S e m e la b ’s P ow erM O S I V 1M range offers VMOS switching speeds, very low on-resiscance,
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T0264
SML3565BN
L3580BN
T0247
TG247
SMU004RKN
T0220
T0247
8N60M
SW8600
Z357
L4080B
l3540
L5545
L5050BN
L3580
M/ve09 240
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LD 33 regulator
Abstract: LM2937-5.0VT0-220 MIC29502 ADJ so-8 2951 MIC29750 T0263
Text: Section 2. Low-Dropout Regulator Design Charts Regulator Selection Charts Output Current Low Accuracy Noise Single or Dual MIC5210 MSOP-8 Dual 150mA LDO w / Noise Bypass 3.0, 3.3, 3.6, 4.0, 5.0V Single MIC5205 SOT23-5 150mA LDOw/ Noise Bypass 2.8, 3.0, 3.3, 3.6, 3.8, 4.0, 5.0V, Adj
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MIC5210
MIC5205
OT23-5
MIC5202
LP2950
MIC2950
150mA
100mA
LD 33 regulator
LM2937-5.0VT0-220
MIC29502 ADJ
so-8 2951
MIC29750
T0263
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Untitled
Abstract: No abstract text available
Text: r Z 7 SGS-THOMSON ^[] æ[l[L[iCT^©[lïl[]©i STPS60xxCP/CPI STPS6045CW POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS • ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLESWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE
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STPS60xxCP/CPI
STPS6045CW
2500Vrms
STPS6035CPI
STPS6045CPI
T0247
STPS6035CP
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DHG60C600HB
Abstract: 1.5kv fast recovery diodes DOUBLE FAST DIODE dh40-18a DH20-18A DH60-18A DHF30IM600PN DHF30IM600QB DHG30I600HA T0-247
Text: N E W P R O D U C T B R I E □ IXYS F SQNIC-FRD . New Soft Recovery Diodes U L T R A F A S T R E C T IF IE R W ITH V E R Y L O W T A IL C U R R E N T March 2006 Overview: IX Y S Corporation - a leader in pow er sem ico ndu cto rs for P ow e r C onversion and M otion
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800V-,
DHG30I600HA
T0-247
DHG60C600HB
DHG10I600PA
T0-220
DHG10I600PM
T0-220FP
DHG20C600QB
1.5kv fast recovery diodes
DOUBLE FAST DIODE
dh40-18a
DH20-18A
DH60-18A
DHF30IM600PN
DHF30IM600QB
T0-247
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2SJ56
Abstract: 2SJ50 equivalent 2SJ56 equivalent 2SKI76 BUZ90QP BUZ90I BUZ90IP z901 BUZ90S 2SJ568
Text: Magnatec Engineering Distribution M agnatec - lateral M O S F E T s for the audio m arket M ag n a tec , a co m p an y w ith in th e S e m e la b G ro u p , in tro d u c e s a ran g e o f c o m p le m e n ta ry lateral M O S F E T pow er transistors. Supplied in a range of outlines, the 8/16Amp,
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8/16Amp,
160/200Voit
BUZ900D
BUZ90QP
BUZ90I
Z901/906
2SJ162
2SJ56
2X2SJ56
USPI6N20
2SJ56
2SJ50 equivalent
2SJ56 equivalent
2SKI76
BUZ90I
BUZ90IP
z901
BUZ90S
2SJ568
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Untitled
Abstract: No abstract text available
Text: BYW99P/PI/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION T O P 3I: Insulating voltage = 2500 V DC
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BYW99P/PI/W
BYW99PI-200
T0247
BYW99P-200
T0247
BYW99W-200
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M7 DIODE POLARITY
Abstract: DIODE M7 marking M7 DIODE MARKING
Text: SGS-THOMSON IM O M iL iig ra fM O O S B Y W 9 9 P /P I/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . . . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY
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BYW99PI-200
T0247
BYW99P-200
T024ns
M7 DIODE POLARITY
DIODE M7 marking
M7 DIODE MARKING
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Untitled
Abstract: No abstract text available
Text: : SG S-THO M SO N BYW99P/PI/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . ■ . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY
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BYW99P/PI/W
BYW99PI-200
T0247
BYW99P-200
T0247
BYW99W-200
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T0247AC
Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m
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B03M0WH0CTb
npe06pa30Baiennx
paUP212
T0220AB
BUP213
BUP313
T0218AB
BUP313D
T0247AC
IRG4PC50FD
T0-220AB
bup314
T0-247AC
bup314d
IRG4BC40U
T0220AB
IRG4PC50UD
BUP212
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STPS 50 45
Abstract: STPS 100 3045CP STPS3045CW STPS3045CP
Text: 30 3045 SGS-THOMSON IMOMiLiigrafMOOS STPS xxCP/CPI STPS CW POWER SCHOTTKY RECTIFIERS • . ■ ■ . ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE
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STPS3035CPI
STPS3045CPI
T0247
STPS 50 45
STPS 100
3045CP
STPS3045CW
STPS3045CP
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON STPS60xxCP/CPI STPS6045CW IMSIlaillLiOTIHMDCS POWER SCHOTTKY RECTIFIERS . • . ■ ■ . ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLESWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE
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STPS60xxCP/CPI
STPS6045CW
STPS6035CPI
STPS6045CPI
orT0247
STPS6035CP
STPS6045CP
T0247
STPS6045CW
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Untitled
Abstract: No abstract text available
Text: STPS60L30CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 30 V Tj (max) 150 °C V f (max) 0.38 V FEATURES AND BENEFITS • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING
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STPS60L30CW
T0247,
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T0247 package
Abstract: No abstract text available
Text: r= Z SCS'THOM SON ^ 7# R IHOTIMDIBS STPS30L40CW POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS lF av 30 A V rrm 40 V V f (max) 0.50 V A1— W— —- K FEATURES AND BENEFITS . • . ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP
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STPS30L40CW
T0247
T0247
T0247 package
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Rectifier diodes ultrafast, rugged BYQ40EW series FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance
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BYQ40EW
OT429
T0247)
OT429
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T0247 package
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Rectifier diodes ultrafast, rugged BYQ60EW series FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance
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BYQ60EW
OT429
T0247)
OT429
T0247 package
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PDF
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PWM welding
Abstract: No abstract text available
Text: @ M ITEL ITZ25F12 - _ Powerline N-Channel IGBT SEM ICON D UCTOR . . . , A dvance Inform ation DS5054-1.2 January 1999 The ITZ25F12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a
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ITZ25F12
DS5054-1
ITZ25F12
PWM welding
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a 1757 transistor
Abstract: transistors a 1757
Text: Philips Semiconductors Preliminary specification PowerMOS transistors FHW14N50E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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FHW14N50E
PHW14N50E
OT429
T0247)
a 1757 transistor
transistors a 1757
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T0247 package
Abstract: No abstract text available
Text: SGS-THOMSON RfflDOœUlLiOir^OiDSi STPS60xxCP/CPl STPS6045CW POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS • ■ ■ ■ . VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE A1
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STPS60xxCP/CPl
STPS6045CW
STPS6035CPI
STPS6045CPI
STPS6035CP
STPS6045CP
T0247
T0247 package
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHP11N50E,
PHB11N50E,
PHW11N50E
PHP11N50E
T0220AB)
11N50E
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