2SK1229

Abstract: 2ROPT
Contextual Info: l— 2SK1229 — - Preliminary SIE D • 44^205 DOIITÔT T06 ■ H I T 4 GaAsN-Channel HEMT ■ OUTLINE DRAWING SHF Converter RF Amplifier HITACHI/ OPTOELECTRONICS ■FEATURES • Low Noise, High Gain

t06 94

Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES UPC2756T INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz • ON BOARD OSCILLATOR • LOW CURRENT CONSUMPTION: 6 mA « SUPER SMALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: P T06 M S 3116 SP06 straight plug TERMINATION ASSEMBLIES A" General Duty "A ' (SR). "E” (SR), "P" (SR), MS, "F" Strain Relief “P" Potting Boot “ E"O pen Wire Seal “W " Cable Seal L- PT06A-XX-XXX (SR) SP06A-XX-XXX (SR) PTG06A-XX-XXX (SR)

SRT-2W6H

Abstract: SRK-12ZB A114C SRT 2w6H V08G 113C 134B U17C U17D U17E
Contextual Info: - 94 - ft * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr I fsm T £ # Vpmax I Rt na x Vz V * &<* m (k W ) (V ) (V ) (V ) (A ) (°C> 20 0 0. 15 40a (A ) S R —3 S R —3 B n S R —4 S R —4 20 0 SR-4 H * ') SRK-12ZB(T06) SRK-12ZBÍT07)

SRT-2W6H

Abstract: SRK-12ZB U17E v08g c 113C 134B U17C U17D V07E SRT-2W6
Contextual Info: - 94 - ft * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr I fsm T £ # Vpmax I Rt na x Vz V * &<* m (k W ) (V ) (V ) (V ) (A ) (°C> 20 0 0. 15 40a (A ) S R —3 S R —3 B n S R —4 S R —4 20 0 SR-4 H * ') SRK-12ZB(T06) SRK-12ZBÍT07)

SRT-2W6H

Abstract: SRK-12ZB U17E v08g c 113C 134B U17C U17D V07E SRT-2W6
Contextual Info: - 94 - f t * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr Ifsm T £ # Vpmax I Rtnax Vz V * & < * m (kW) (V) (V) (V) (A) (°C> 200 0. 1 5 40a (A) S R —3 S R —3 B n S R —4 S R —4 200 SR-4 H * ' ) SRK-12ZB(T06) SRK-12ZBÍT07)

SRT-2W6H

Abstract: 134B v08g c 113C SRK-12ZB U17C U17D U17E V07E s 134b
Contextual Info: - 94- f t * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr Ifsm T £ # Vpmax I Rtnax Vz V * & < * m (kW) (V) (V) (V) (A) (°C> 200 0. 1 5 40a (A) S R —3 S R —3 B n S R —4 S R —4 200 SR-4 H * ' ) SRK-12ZB(T06) SRK-12ZBÍT07)

79012

Contextual Info: 3.5mm SHIELDED PHONE JACKS 79012 Series Glass-filled thermoplastic UL 94 -0 Phosphor bronze Tin plated over nickel Contact resistance: 50 milliohms max. Dielectric withstanding : 250 VAC Insulation Resistance: 50 megohms min. Operating temperature: -4 0 °C ~ +85 °C

t06 sot 23

Abstract: UPC2710 upc2713
Contextual Info: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.

8aa1

Abstract: 8AA8 MARKING t06 8801 st t06 93
Contextual Info: Primary lithium battery LST 14500 3.6 V Primary lithium-thionyl chloride Li-SOCl2 High energy density AA-size bobbin cell Benefits ● ● ● High voltage response, stable during most of the lifetime of the application Wide operating temperature range (-60°C/+85°C)

outline pro 408

Contextual Info: PRELIMINARY DATA SHEET 3 V, SILICON MMIC FREQUENCY UP-CONVERTER FEATURES UPC8106T UPC8109T INTERNAL BLOCK DIAGRAM • W IDE BAND OPERATION: IF Input: 3 dB BW: 50 - 400 MHz Typical RF Output: 3 dB BW: 0.1 ~2 GHz Typical • LOW VOLTAGE OPERATION: 2.7 V Minimum

Contextual Info: 3 V, SILICON MMIC FREQUENCY CONVERTER FEATURES_ • W IDE BAND OPERATION UP TO 2.5 GHz • LOW VOLTAGE OPERATION: 2.7 V Minimum • LOW POWER CONSUMPTION: 15 mW UPC2757T • POWER SAVE FUNCTION • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: PRELIMINARY DATA SHEET 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER UPC2771T TEST CIRCUIT FEATURES • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical • HIGH OUTPUT POW ER: PidB = +12 dBm at 900 MHz +11 dBm at 1500 MHz • LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum

UPC810

Abstract: UPC8107T t06 47
Contextual Info: ADVANCE PRODUCT INFORMATION 1 V, 1 mA SILICON MMIC AMPLIFIER FEATURES_ • UPC8107T APPLICATION CIRCUITS LOW VOLTAGE, LOW CURRENT: 1 mA at 1 V • HIGH GAIN: 28 dB at 150 MHz • LOW POWER CONSUMPTION: Less than 1 mW • SUPER SMALL PACKAGE

UPC81

Abstract: T06 84
Contextual Info: PRELIMINARY DATA SHEET 1 V, 0.5 mA SILICON MMIC AMPLIFIER FEATURES UPC8102T APPLICATION CIRCUITS LOW VOLTAGE, LOW CURRENT: 0.5 mA at 1 V HIGH GAIN: 19 dB at 150 MHz LOW POWER CONSUMPTION: 0.5 mW Typical SUPER SM ALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: PRELIMINARY DATA SHEET 1.6 GHz DIFFERENTIAL WIDEBAND SILICON MMIC AMPLIFIER UPC2726T FEATURES • H IG H G A IN : 15 dB Typical at 400 MHz • W ID E B A N D F R E Q U E N C Y R E S P O N S E : 1.6 GHz TYP • S IN G L E 5 V S U P P L Y • SUPER SM ALL PACKAGE

Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W IDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) m T> • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

Contextual Info: NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES g a in vs. UPC2708T UPC2711T frequency • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

Contextual Info: N B C LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER UPC2714T UPC2715T FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc - 3.4 V, Icc - 4.5 mA • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • WIDE FREQUENCY RESPONSE: 3 G H z • HIGH GAIN: 15 dB U P C 2 7 0 8 T . SATURATED OUTPUT POWER: + 1 0 dBm (U P C 2 7 0 8 T ) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W ID E FREQ UENC Y R ESPO NSE: 3 GHz • HIG H G AIN: 15 dB UPC 2708T • SA TUR ATED O U TPU T PO W ER: +10 dBm (UPC2708T) • INTERNAL CU R R EN T REG ULATIO N M INIM IZES GAIN CH ANG E O VER T EM PER A TU R E

upc 1185 h

Abstract: uPC 1185 2709T UPC 1208
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES_ • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: + 11.5 dBm (UPC2709T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

CIE-UPC2709T

Abstract: upc2712t
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES WIDE FREQUENCY RESPONSE: 2.5 GHz HIGH GAIN: 23 dB UPC2709T SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) m •o INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE O Ç ‘«j

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits