Untitled
Abstract: No abstract text available
Text: 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI' s high-performance CMOS technology. This highly reliable pro
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IS61C64AH
8192-word
IS61C64AH-12N
IS61C64AH-12J
300-mil
IS61C64AH-15N
IS61C64AH-15J
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tdq4-M
Abstract: HP 2231 IS42S16128
Text: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.
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131072-word
16-bit
50-pin
DR005-0A
tdq4-M
HP 2231
IS42S16128
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Untitled
Abstract: No abstract text available
Text: 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION DECEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Automated Byte Write and Block Erase — Industry-Standard Command User Interface
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16-KB
96-KB
PK13197T1-40
0044D4
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628F
Abstract: MAX714
Text: IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY AD VA N C E INFORM ATIO N DEC EM B ER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Industrial Temperature Operation 40°C to +85° C
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IS28F400BV/BLV
IS28F400BVB-80TI
IS28F400BVT-80TI
48-pin
44-pin
IS28F400BLVB-120TI
IS28F400BLVT-120TI
628F
MAX714
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Untitled
Abstract: No abstract text available
Text: issr 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation Industrial Temperature Operation 40°C to +85°C • High-Performance Read
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x8/x16
32-bit
IS28F200BVB-80TI
48-pin
44-pin
IS28F200BVT-80TI
IS28F200BLVB-120TI
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Untitled
Abstract: No abstract text available
Text: ISSI IS24C02-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 nA • Low voltage operation — 3.0V Vcc = 2.7V to 5.5V • Hardware write protection
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IS24C02-3
048-BIT
T0Q4404
IS24C02-3P
IS24C02-3G
600-mil
IS24C02-3PI
IS24C02-3GI
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Untitled
Abstract: No abstract text available
Text: I S CMOS SINGLE CHIP 8-BIT MICROCONTROLLER S F ADVANCE INFORMATION AR PIL 1997 FEATURES G ENERAL DESCRIPTION • 8K x 8 ROM IS80C52 only The ISSI IS80C52/32 is a high-performance micro controller fabricated using high-density CMOS technology. The CMOS IS80C52/32 is functionally
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IS80C52
IS80C52/32
16-bit
40-pin
44-pin
600-m
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Untitled
Abstract: No abstract text available
Text: ISSI IS27LV020 262,144 X 8 HIGH-SPEED, LOW VOLTAGE CMOS EPROM ADVANCE INFORMATION JULY 1996 FEATURES DESCRIPTION • Fast read access time: 90 ns • Industrial and commercial temperature ranges available • 5V ±10% or 2.7V to 3.6V power supply tolerance
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IS27LV020
32-pin
IS27LV020
256K-word
PK13197T32
T004404
00G05b4
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24C04
Abstract: IS24C04 IS24C04-G IS24C04-GI IS24C04-P IS24C04-PI
Text: IS24C04 m 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • • • • • • • • Low power C M O S — Active current less than 2 mA — Standby current less than 8 |iA Hardware write protection — Write control pin
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IS24C04
096-BIT
16-Byte
IS24C04
a0995
EP81995DS04
IS24C04-P
IS24C04-G
600-mil
24C04
IS24C04-GI
IS24C04-PI
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