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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power • PidB = • High gain dBm at 4.9 GHz to 5.1 GHz


    OCR Scan     		PDF TIM4951-30L T017ESQ TIM4951-SOLÂ M4951-30L MW5059Ã 00B231b

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ TT 9097250 TOSHIBA DISCRETE/OPTO DE"|l[H7a5D O Q ^ E T O 7 990 17290 DT-Ml-35- T L R 3 0 I OWG « Week is displayed by 3 characters. o Character height; 15 ran (0.6") for clock display, 4 mm (0.16") for week display. « For duplex drive and connected common anode.


    OCR Scan     		PDF DT-Ml-35-