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    T17 DUAL TRANSISTOR Search Results

    T17 DUAL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T17 DUAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B647

    Abstract: DTA144EK DI-74 DTA114EK transistor marking B9
    Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,


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    PDF IMT17 SC-88 SC-74 B647 DTA144EK DI-74 DTA114EK transistor marking B9

    IMT17

    Abstract: 2SA1036K T110
    Text: IMT17 Transistors General purpose transistor isolated dual transistors IMT17 zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (5) (4) (6) +0.2 1.6 −0.1 (4) 2.8±0.2 zFeatures 1) Two 2SA1036K chips in an SMT package.


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    PDF IMT17 2SA1036K -500mA SC-74 IMT17 T110

    IMT17

    Abstract: No abstract text available
    Text: IMT17 Transistors General purpose transistor isolated dual transistors IMT17 zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (5) (4) (6) +0.2 1.6 −0.1 (4) 2.8±0.2 zFeatures 1) Two 2SA1036K chips in an SMT package.


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    PDF IMT17 2SA1036K 500mA SC-74 IMT17

    IMT17

    Abstract: No abstract text available
    Text: IMT17 Transistors General purpose transistor isolated dual transistors IMT17 Applications General purpose small signal amplifier External dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (5) (4) (6) +0.2 1.6 −0.1 (4) 2.8±0.2


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    PDF IMT17 2SA1036K 500mA SC-74 IMT17

    IBM0316809C

    Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
    Text: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8


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    PDF IBM0316169C IBM0316409C IBM0316809C cycles/64ms IBM0316809C ibm T22 cmos dram T20 96 diode

    ibm T22

    Abstract: IBM0316169C IBM0316809C 22TCK SDRAM 1996
    Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3


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    PDF IBM0316409C IBM0316169C IBM0316809C IBM0316809C IBM0316169C 16Mbit ibm T22 22TCK SDRAM 1996

    IBM0316169C

    Abstract: IBM0316809C ibm t20
    Text: . IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Preliminary Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8


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    PDF IBM0316409C IBM0316809C IBM0316169C cycles/64ms SA14-4711-03 IBM0316169C IBM0316809C ibm t20

    g1l transistor

    Abstract: AN8829 lossless passive clamp flyback converter SP600 mosfet discrete totem pole drive CIRCUIT 8829 mosfet dv/dt HVIC IRF820 SP601 130KHZ FORWARD IC
    Text: Harris Semiconductor No. AN8829.2 April 1994 Harris Intelligent Power Products SP600 AND SP601 AN HVIC MOSFET/IGT DRIVER FOR HALF-BRIDGE TOPOLOGIES Author: Dean F. Henderson The interfacing of low-level logic to power half-bridge configurations can be accomplished by an 500VDC intelligent IC,


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    PDF AN8829 SP600 SP601 500VDC 230VAC SP600 SP601 g1l transistor lossless passive clamp flyback converter mosfet discrete totem pole drive CIRCUIT 8829 mosfet dv/dt HVIC IRF820 130KHZ FORWARD IC

    RBS 2111

    Abstract: lossless passive clamp flyback converter AN8829 8829 mosfet SP600 SP601 3 phase UPS block diagram using MOSFET
    Text: SP600 and SP601 an HVIC MOSFET/IGT Driver for Half-Bridge Topologies Application Note April 1994 AN8829.2 Author: Dean F. Henderson The interfacing of low-level logic to power half-bridge configurations can be accomplished by an 500VDC intelligent IC, the SP600 series driver, which is designed for up to 230VAC


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    PDF SP600 SP601 AN8829 500VDC 230VAC RBS 2111 lossless passive clamp flyback converter 8829 mosfet 3 phase UPS block diagram using MOSFET

    IBM03254K4

    Abstract: IBM0325164 IBM DATE CODE
    Text: . IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb Synchronous DRAM - Die Revision B Advance Rev 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


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    PDF IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb -75H3 -75D3 06K0608 F39375. IBM03254K4 IBM DATE CODE

    AN757

    Abstract: SP600 g1l transistor mosfet discrete totem pole drive CIRCUIT AN75 AN-7507 P601 SP601 h5 t6 diode
    Text: SP600 and SP601 an HVIC MOSFET/IGT Driver for Half-Bridge Topologies Application Note April 1997 AN-7507 Author: Dean F. Henderson /Title AN75 7 Subect SP600 nd P601 n VIC OSET/I T river or alfridge opolgie ) Autho ) Keyords Interil orpoation, emionuctor,


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    PDF SP600 SP601 AN-7507 SP600 500VDC 230VAC AN757 g1l transistor mosfet discrete totem pole drive CIRCUIT AN75 AN-7507 P601 h5 t6 diode

    IBM03254B4CT3A-75A

    Abstract: No abstract text available
    Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1


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    PDF IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb IBM03254B4CT3A-75A

    dv/dt HVIC

    Abstract: p600 mosfet AN-7507 P600 SP600 SP601 lossless passive clamp flyback converter irf820 equivalent
    Text: SP600 and SP601 an HVIC MOSFET/IGT Driver for Half-Bridge Topologies Application Note April 1994 AN-7507 Author: Dean F. Henderson Title N88 bt P600 d 601 VIC OST/I The interfacing of low-level logic to power half-bridge configurations can be accomplished by an 500VDC intelligent IC,


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    PDF SP600 SP601 AN-7507 500VDC 230VAC dv/dt HVIC p600 mosfet AN-7507 P600 lossless passive clamp flyback converter irf820 equivalent

    MC1472P1

    Abstract: mc1472
    Text: M — M O T O R O L A — MC1472 Dual Peripheral-H igh-Voltage Positive “NAND” Driver The dual driver consists of a pair of PNP buffered AN D gates connected to the bases of a pair of high voltage NPN transistors. T hey are sim ilar to the M C75452 drivers but with the added advantages of: 1) 70 V capability


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    PDF MC1472 C75452 i77fl3 MC1472 b3b7253 MC1472P1

    transistor ECG 152

    Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
    Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application


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    PDF DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ECG 152 Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041

    HCT801

    Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185
    Text: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V


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    PDF HCT801 HCT801 000E345 HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185

    Untitled

    Abstract: No abstract text available
    Text: BSO 615NV I n fin e o n technologies Preliminary Data SIPMOS Small'Signal-Transistor Product Summary Features 60 V ADSfonl 0.12 k> 3.1 u A • Dual N Channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance Continuous drain current


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    PDF 615NV Q67Q41-S2844 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 G133771

    transistor bf 422 NPN

    Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103
    Text: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency


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    PDF BFR521 OT103 MSB037 OT103. 7110A2b transistor bf 422 NPN BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103

    transistor ecg36

    Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
    Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo


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    PDF DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ecg36 transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180

    Untitled

    Abstract: No abstract text available
    Text: IB M 03168B 9C IB M 03164B 9C 16M b S y n c h r o n o u s S ta c k e d D R A M F e a tu re s • High Performance: • Multiple Burst Read with Single Write Option • Í -1Û : -12 CL=3 : CL=3 ;! fcK ; Clock Frequency I 1 00 I 83 :j MHz \ ; tCK ¡ClockCycle


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    PDF cycles/64ms 400mil; 77H9994 IBM03168B9C IBM03164B9C

    Untitled

    Abstract: No abstract text available
    Text: f i l H A R R RURP6120CC IS S E M I C O N D U C T O R 6A, 1200V Ultrafast Dual Diode O cto b e r 1995 Features • Package Ultrafast with Soft R ecovery. <70ns JEDEC T0-220AB • Operating Tem p eratu


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    PDF RURP6120CC T0-220AB RURP6120CC O-220AB 00h37Ã

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS IL221/222/223 PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES * High Current Transfer Ratios, lF=1 mA, IL 221,100% Minimum IL222, 200% Minimum IL223, 500% Minimum * Withstand Test Voltage, 2500 VRMS * Electrical Specifications Similar to


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    PDF IL221/222/223 IL222, IL223, RS481 E52744 fl235bOS

    Untitled

    Abstract: No abstract text available
    Text: , -.r-' _ b3E • rn r - „ T T i M IT S U B IS H I BIPO LAR D IG IT A L ICs ^ 2 4 ^ 0 2 7 OGlil?'! STb ■ M I T 3 MITSUBISHI _ _ M54605P iw.w-.-www. DGTL LOGIC DUAL P E R IP H E R A L P O S IT IV E NAND D R IVER DESCRIPTION M 54605P is a semiconductor integrated circuit containing 2


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    PDF M54605P 54605P

    IT2205

    Abstract: IBM0316809CT3-10 g618ac
    Text: IBM0316409CIBM0316809C IBM0316169C 16Mbit S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91


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    PDF IBM0316409CIBM0316809C IBM0316169C 16Mbit cycles/64ms IBM0316809C IBM0316409C 400mil; IT2205 IBM0316809CT3-10 g618ac