T17 DUAL TRANSISTOR Search Results

T17 DUAL TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

T17 DUAL TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
B647 Abstract: DTA144EK DI-74 DTA114EK transistor marking B9 Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,	Original	IMT17 SC-88 SC-74 B647 DTA144EK DI-74 DTA114EK transistor marking B9	PDF
IMT17 Abstract: 2SA1036K T110 Text: IMT17 Transistors General purpose transistor isolated dual transistors IMT17 zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (5) (4) (6) +0.2 1.6 −0.1 (4) 2.8±0.2 zFeatures 1) Two 2SA1036K chips in an SMT package.	Original	IMT17 2SA1036K -500mA SC-74 IMT17 T110	PDF
IMT17 Abstract: No abstract text available Text: IMT17 Transistors General purpose transistor isolated dual transistors IMT17 zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (5) (4) (6) +0.2 1.6 −0.1 (4) 2.8±0.2 zFeatures 1) Two 2SA1036K chips in an SMT package.	Original	IMT17 2SA1036K 500mA SC-74 IMT17	PDF
IMT17 Abstract: No abstract text available Text: IMT17 Transistors General purpose transistor isolated dual transistors IMT17 Applications General purpose small signal amplifier External dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (5) (4) (6) +0.2 1.6 −0.1 (4) 2.8±0.2	Original	IMT17 2SA1036K 500mA SC-74 IMT17	PDF
IBM0316809C Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode Text: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8	Original	IBM0316169C IBM0316409C IBM0316809C cycles/64ms IBM0316809C ibm T22 cmos dram T20 96 diode	PDF
ibm T22 Abstract: IBM0316169C IBM0316809C 22TCK SDRAM 1996 Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3	Original	IBM0316409C IBM0316169C IBM0316809C IBM0316809C IBM0316169C 16Mbit ibm T22 22TCK SDRAM 1996	PDF
IBM0316169C Abstract: IBM0316809C ibm t20 Text: . IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Preliminary Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8	Original	IBM0316409C IBM0316809C IBM0316169C cycles/64ms SA14-4711-03 IBM0316169C IBM0316809C ibm t20	PDF
g1l transistor Abstract: AN8829 lossless passive clamp flyback converter SP600 mosfet discrete totem pole drive CIRCUIT 8829 mosfet dv/dt HVIC IRF820 SP601 130KHZ FORWARD IC Text: Harris Semiconductor No. AN8829.2 April 1994 Harris Intelligent Power Products SP600 AND SP601 AN HVIC MOSFET/IGT DRIVER FOR HALF-BRIDGE TOPOLOGIES Author: Dean F. Henderson The interfacing of low-level logic to power half-bridge configurations can be accomplished by an 500VDC intelligent IC,	Original	AN8829 SP600 SP601 500VDC 230VAC SP600 SP601 g1l transistor lossless passive clamp flyback converter mosfet discrete totem pole drive CIRCUIT 8829 mosfet dv/dt HVIC IRF820 130KHZ FORWARD IC	PDF
RBS 2111 Abstract: lossless passive clamp flyback converter AN8829 8829 mosfet SP600 SP601 3 phase UPS block diagram using MOSFET Text: SP600 and SP601 an HVIC MOSFET/IGT Driver for Half-Bridge Topologies Application Note April 1994 AN8829.2 Author: Dean F. Henderson The interfacing of low-level logic to power half-bridge configurations can be accomplished by an 500VDC intelligent IC, the SP600 series driver, which is designed for up to 230VAC	Original	SP600 SP601 AN8829 500VDC 230VAC RBS 2111 lossless passive clamp flyback converter 8829 mosfet 3 phase UPS block diagram using MOSFET	PDF
IBM03254K4 Abstract: IBM0325164 IBM DATE CODE Text: . IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb Synchronous DRAM - Die Revision B Advance Rev 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle	Original	IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb -75H3 -75D3 06K0608 F39375. IBM03254K4 IBM DATE CODE	PDF
AN757 Abstract: SP600 g1l transistor mosfet discrete totem pole drive CIRCUIT AN75 AN-7507 P601 SP601 h5 t6 diode Text: SP600 and SP601 an HVIC MOSFET/IGT Driver for Half-Bridge Topologies Application Note April 1997 AN-7507 Author: Dean F. Henderson /Title AN75 7 Subect SP600 nd P601 n VIC OSET/I T river or alfridge opolgie ) Autho ) Keyords Interil orpoation, emionuctor,	Original	SP600 SP601 AN-7507 SP600 500VDC 230VAC AN757 g1l transistor mosfet discrete totem pole drive CIRCUIT AN75 AN-7507 P601 h5 t6 diode	PDF
IBM03254B4CT3A-75A Abstract: No abstract text available Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1	Original	IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb IBM03254B4CT3A-75A	PDF
dv/dt HVIC Abstract: p600 mosfet AN-7507 P600 SP600 SP601 lossless passive clamp flyback converter irf820 equivalent Text: SP600 and SP601 an HVIC MOSFET/IGT Driver for Half-Bridge Topologies Application Note April 1994 AN-7507 Author: Dean F. Henderson Title N88 bt P600 d 601 VIC OST/I The interfacing of low-level logic to power half-bridge configurations can be accomplished by an 500VDC intelligent IC,	Original	SP600 SP601 AN-7507 500VDC 230VAC dv/dt HVIC p600 mosfet AN-7507 P600 lossless passive clamp flyback converter irf820 equivalent	PDF
MC1472P1 Abstract: mc1472 Text: M — M O T O R O L A — MC1472 Dual Peripheral-H igh-Voltage Positive “NAND” Driver The dual driver consists of a pair of PNP buffered AN D gates connected to the bases of a pair of high voltage NPN transistors. T hey are sim ilar to the M C75452 drivers but with the added advantages of: 1) 70 V capability	OCR Scan	MC1472 C75452 i77fl3 MC1472 b3b7253 MC1472P1	PDF

transistor ECG 152 Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041 Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application	OCR Scan	DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ECG 152 Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041	PDF
HCT801 Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185 Text: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V	OCR Scan	HCT801 HCT801 000E345 HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185	PDF
Untitled Abstract: No abstract text available Text: BSO 615NV I n fin e o n technologies Preliminary Data SIPMOS Small'Signal-Transistor Product Summary Features 60 V ADSfonl 0.12 k> 3.1 u A • Dual N Channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance Continuous drain current	OCR Scan	615NV Q67Q41-S2844 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 G133771	PDF
transistor bf 422 NPN Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103 Text: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency	OCR Scan	BFR521 OT103 MSB037 OT103. 7110A2b transistor bf 422 NPN BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103	PDF
transistor ecg36 Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180 Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo	OCR Scan	DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ecg36 transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180	PDF
Untitled Abstract: No abstract text available Text: IB M 03168B 9C IB M 03164B 9C 16M b S y n c h r o n o u s S ta c k e d D R A M F e a tu re s • High Performance: • Multiple Burst Read with Single Write Option • Í -1Û : -12 CL=3 : CL=3 ;! fcK ; Clock Frequency I 1 00 I 83 :j MHz \ ; tCK ¡ClockCycle	OCR Scan	cycles/64ms 400mil; 77H9994 IBM03168B9C IBM03164B9C	PDF
Untitled Abstract: No abstract text available Text: f i l H A R R RURP6120CC IS S E M I C O N D U C T O R 6A, 1200V Ultrafast Dual Diode O cto b e r 1995 Features • Package Ultrafast with Soft R ecovery. <70ns JEDEC T0-220AB • Operating Tem p eratu	OCR Scan	RURP6120CC T0-220AB RURP6120CC O-220AB 00h37Ã	PDF
Untitled Abstract: No abstract text available Text: SIEMENS IL221/222/223 PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES * High Current Transfer Ratios, lF=1 mA, IL 221,100% Minimum IL222, 200% Minimum IL223, 500% Minimum * Withstand Test Voltage, 2500 VRMS * Electrical Specifications Similar to	OCR Scan	IL221/222/223 IL222, IL223, RS481 E52744 fl235bOS	PDF
Untitled Abstract: No abstract text available Text: , -.r-' _ b3E • rn r - „ T T i M IT S U B IS H I BIPO LAR D IG IT A L ICs ^ 2 4 ^ 0 2 7 OGlil?'! STb ■ M I T 3 MITSUBISHI _ _ M54605P iw.w-.-www. DGTL LOGIC DUAL P E R IP H E R A L P O S IT IV E NAND D R IVER DESCRIPTION M 54605P is a semiconductor integrated circuit containing 2	OCR Scan	M54605P 54605P	PDF
IT2205 Abstract: IBM0316809CT3-10 g618ac Text: IBM0316409CIBM0316809C IBM0316169C 16Mbit S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91	OCR Scan	IBM0316409CIBM0316809C IBM0316169C 16Mbit cycles/64ms IBM0316809C IBM0316409C 400mil; IT2205 IBM0316809CT3-10 g618ac	PDF

T17 DUAL TRANSISTOR Search Results

T17 DUAL TRANSISTOR Result Highlights (5)

T17 DUAL TRANSISTOR Datasheets Context Search

B647

IMT17

IMT17

IMT17

IBM0316809C

ibm T22

IBM0316169C

g1l transistor

RBS 2111

IBM03254K4

AN757

IBM03254B4CT3A-75A

dv/dt HVIC

MC1472P1

transistor ECG 152

HCT801

Untitled

transistor bf 422 NPN

transistor ecg36

Untitled

Untitled

Untitled

Untitled

IT2205