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    T1P30 Price and Stock

    Festo VEMP-BS-3-13-D7-F-22T1-P30

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    Festo VEMP-BS-3-16-D5-F-28T1-P30

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    Festo VEMP-BS-3-16-D7-F-28T1-P30

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    Festo VEMP-BS-3-13-D19-F-28T1-P30

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    Festo VEMP-BS-3-16-D7-F-28T1-P30 (ALTERNATE: 8064295)

    Proportional Valve, Piezo technology, 1.6mm, 1.1 bar | Festo VEMP-BS-3-16-D7-F-28T1-P30
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    RS VEMP-BS-3-16-D7-F-28T1-P30 (ALTERNATE: 8064295) Bulk 1
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    T1P30 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T1P3002028-SP TriQuint Semiconductor 20 W, 28 V, 500 MHz - 2GHz Pulsed pHEMT RF Power Transistor Scan PDF
    T1P3003028-SP TriQuint Semiconductor 30 W, 28 V, 500 MHz - 2GHz Pulsed pHEMT RF Power Transistor Scan PDF
    T1P3005028-SP TriQuint Semiconductor 50 W, 28 V, 500 MHz - 2GHz Pulsed pHEMT RF Power Transistor Scan PDF
    T1P30B Continental Device India Semiconductor Device Data Book 1996 Scan PDF

    T1P30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF POWER TRANSISTOR

    Abstract: T1P3002028-SP transistor jc 817
    Text: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across


    Original     		PDF T1P3002028-SP 500MHz 20watts 26Watts 26Watt RF POWER TRANSISTOR transistor jc 817

    transistor 746

    Abstract: No abstract text available
    Text: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across


    Original     		PDF T1P3003028-SP 500MHz 30watts 40Watts 40Watt transistor 746

    pHEMT transistor 360

    Abstract: "RF Power Transistor" T1P3005028-SP
    Text: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across


    Original     		PDF T1P3005028-SP T1P3005028-SP 500MHz 50watts 65Watts 65Watt pHEMT transistor 360 "RF Power Transistor"

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    LM1011N

    Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
    Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44


    Original     		PDF ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 LM1011N JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n

    jrc386d

    Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
    Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50


    Original     		PDF ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 jrc386d SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303

    transistor B 764

    Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
    Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.


    OCR Scan     		PDF T1P3003028-SP T1P3003028-SP 500MHz 30watts transistor B 764 P1D8 179502 P3003 012673 0823838

    T1P3005028-SP

    Abstract: 50w transistor RF power transistor
    Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3005028-SP 50W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction Table 1. M axim um Ratings Sym The T1P3005028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed


    OCR Scan     		PDF T1P3005028-SP T1P3005028-SP 500MHz 50watts 50w transistor RF power transistor

    Untitled

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF

    TIP-30B

    Abstract: tip30
    Text: TIP30 S E R IE S TIP30/30A/30B/30C PNP EPITAXIAL SILICON TRAN SISTO R MEDIUM POW ER LINEAR SWITCHING APPLICATIONS • Complement to TIP29/29A/29B/29C ABSO LU TE MAXIMUM RATINGS Characteristic Collector Emitter Voltage : T1P30 : TIP3QA Symbol Rating Unit


    OCR Scan     		PDF TIP30 TIP30/30A/30B/30C) TIP29/29A/29B/29C T1P30 TIP30B TIP30C TIP30 TIP30C ELECTRIC200 TIP-30B

    transistor sc 1972

    Abstract: TIP3055 TIP2955 NPN power transistor TIP2955 transistor PNP TIP2955 texas instruments tip3055
    Text: TIP2955 PNP SILICON POWER TRANSISTOR _ JA N U A R Y 1972 • R E V IS E D M AY 1995 • Designed for Complementary Use with the T1P3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current SOT-93 PAC KAG E


    OCR Scan     		PDF TIP2955 TIP3055 OT-93 transistor sc 1972 TIP2955 NPN power transistor transistor PNP TIP2955 texas instruments tip3055

    transistor B 764

    Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
    Text: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.


    OCR Scan     		PDF T1P3002028-SP T1P3002028-SP 500MHz 30watts transistor B 764 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 powerband N4030

    30df

    Abstract: AI mm sot 553 TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF
    Text: TIP30F TIP30AF; TIP30BF ^ T1P30CF; TIP30DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S O T 1 8 6 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF TIP30CF; TIP30DF OT186 TIP29F, T1P29AF, TIP29BF, TIP29CF 30df AI mm sot 553 TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF

    I8212

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF I8212

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    C2688

    Abstract: c2688 transistor tRANSISTOR c2688 TIP308 tip30c TIP30A TIP29 TIP30 TIP30B TIP30D
    Text: J . NS T K iO M TO > b5 D rja T b lT a b 8 9 6 1 7 2 6 TEXAS INSTR COPTO 62C D03b7SE 36752 J 3 ~ D / ? TIP30, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIP30F P-N-P SILICON POWER TRANSISTORS J U L Y 1 9 6 8 - R EV ISED O CTO BE R 198 4 • Designed for Complementary Use With TIP29 series


    OCR Scan     		PDF 003b7SE TIP30, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIP30F TIP29 T0-220AB C2688 c2688 transistor tRANSISTOR c2688 TIP308 tip30c TIP30A TIP30 TIP30B TIP30D

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan     		PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    30BF

    Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF 00M34bb T-33-IT OT186 TIP29F, TIP29AF, 30BF TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF

    T1P3055

    Abstract: t1p29 CSD1047 TIP295 CSD1047Y
    Text: r-B OIM A C £ F G H K L M N P C- MIN. 17.75 5.2 3.8 0 1.9 14,50 33.25 20.75 11.50 1.0 18.75 0 .4 0 3.15 5.21 MAX. 18*25 5.7 4.2 0 2.1 15.10 36.75 21.25 12.25 1.30 21.65 0.60 3.45 5.72 1. 2. 3. B A SE CO LLECTO R EM ITTER A LL DIM ENSIO NS A R E IN M.M. TO BE MOUNTED WITH SIUCONE GREASE ON THE BACK SIDE.


    OCR Scan     		PDF TIP145F TIP146F TIP147F TIP295SF T1P29SSHVF TIP305SF T1P3055HVF T1P3055 t1p29 CSD1047 TIP295 CSD1047Y

    Untitled

    Abstract: No abstract text available
    Text: INTRODUCTION PLASTIC ENCAPSULATED TRAN SISTO RS TRI ACS AND THYRISTO RS This catalogue provides technical descriptions and specifications on Plastic Power Semiconductors manufactured by Texas Instruments. From the earliest days o f transistors Sem iconductor C ircuit Designers have


    OCR Scan     		PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


    OCR Scan     		PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC