circuit diagram electronic choke for tube light
Abstract: osram transistor Electronic ballast ELECTRONIC BALLAST transistor DIAGRAM 40 w electronic tube light choke Electronic ballast circuit diagram 230 v 20 w ELECTRONIC BALLAST 8W fluorescent lamp transistor Electronic ballast electronic 40 w tube light choke ANT016 rk2 zener
Text: TELEFUNKEN Semiconductors ANT016 Bipolar Power Transistors in Electronic Ballasts Selection Criteria and System Requirements Issue: 11. 95 ANT016 TELEFUNKEN Semiconductors Table of Contents Introduction .1
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ANT016
BUF654
BYT51K
BYT52K
circuit diagram electronic choke for tube light
osram transistor Electronic ballast
ELECTRONIC BALLAST transistor DIAGRAM
40 w electronic tube light choke
Electronic ballast circuit diagram 230 v 20 w
ELECTRONIC BALLAST 8W fluorescent lamp
transistor Electronic ballast
electronic 40 w tube light choke
ANT016
rk2 zener
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MRF2947RA
Abstract: MRF2947 MRF2947AT1 MRF2947RAT1 microlab SC-70ML
Text: MOTOROLA Order this document by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF2947AT1,T2 Low Noise Transistors MRF2947RAT1,T2 Motorola’s MRF2947 device contains two high performance, low–noise NPN silicon bipolar transistors. This device has two 941 die housed in the high
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MRF2947/D
MRF2947AT1
MRF2947RAT1
MRF2947
MRF2947
MRF2947RA
microlab
SC-70ML
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ST AN2349 PFC
Abstract: N27-E20 an2349 ptc c884 ba159 st make e20 220v EF20 TRANSFORMER EFD25/13 Voltage Regulator Circuit e20 220v 200V Zener Diode
Text: AN2349 Application note Simple cost-effective PFC using Bipolar Transistors for low-to-medium power HF Ballasts Introduction This note deals with the implementation of a Power Factor Correction PFC in a Discontinuous-mode Boost Converter where a PFC stage is achieved with a power bipolar
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AN2349
ST AN2349 PFC
N27-E20
an2349
ptc c884
ba159 st make
e20 220v
EF20 TRANSFORMER
EFD25/13
Voltage Regulator Circuit e20 220v
200V Zener Diode
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TB6591FL
Abstract: diode bridge 4pin If06
Text: TOSHIBA TB6591FL Toshiba Bi-CMOS Integrated Circuit Silicon Monolithic Preliminary TB6591FL DC motor driver TB6591FL is a motor driver IC for DC which uses LDMOS with low ON-resistor for output transistors. 1 constant current control type bridge dirver circuit and 3 constant
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TB6591FL
TB6591FL
QON48-P-0707-0
diode bridge 4pin
If06
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BDY25
Abstract: BDY23 182T2 181T2 180T2 BDY24
Text: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
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BDY23,
BDY24,
BDY25,
180T2
181T2
182T2
BDY25
BDY23
182T2
181T2
180T2
BDY24
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185T2B
Abstract: BDY28B 185t2 185T2A bdy27 BDY28C BDY28A 185T2C BDY28 183T2
Text: BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
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BDY26,
BDY27,
BDY28,
183T2
184T2
185T2
185T2B
BDY28B
185t2
185T2A
bdy27
BDY28C
BDY28A
185T2C
BDY28
183T2
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181T2
Abstract: 182T2 180T2 BDY24 BDY23 BDY25 181T2 B
Text: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
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BDY23,
BDY24,
BDY25,
180T2
181T2
182T2
181T2
182T2
180T2
BDY24
BDY23
BDY25
181T2 B
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T1 SL 100 NPN Transistor
Abstract: SL 100 NPN Transistor BULD50SL BULD50KC
Text: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs
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BULD50KC,
BULD50SL
O-220
T1 SL 100 NPN Transistor
SL 100 NPN Transistor
BULD50SL
BULD50KC
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AN749
Abstract: mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362
Text: Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
AN749
mrf154 amplifier
Fair-Rite bead
MC1723
MRF154
1N4148
1N5362
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mrf154 amplifier
Abstract: on 5269 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF154
MRF154
mrf154 amplifier
on 5269 transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts
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MRF157
MRF157
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AN749
Abstract: 723 voltage regulator 600 Watt Mosfet Power Amplifier 1N4148 1N5357A MC1723 MRF154 MRF157 0.1 uf Ceramic disc Capacitors 104 mrf154 amplifier
Text: Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics
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MRF157/D
MRF157
AN749
723 voltage regulator
600 Watt Mosfet Power Amplifier
1N4148
1N5357A
MC1723
MRF154
MRF157
0.1 uf Ceramic disc Capacitors 104
mrf154 amplifier
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527 MOSFET TRANSISTOR motorola
Abstract: RL1009-5820-97-D1 AN749 NIPPON CAPACITORS MC1723 application notes IC1 723 1N4148 1N5357A MC1723 MRF154
Text: MOTOROLA Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics
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MRF157/D
MRF157
MRF157/D*
527 MOSFET TRANSISTOR motorola
RL1009-5820-97-D1
AN749
NIPPON CAPACITORS
MC1723 application notes
IC1 723
1N4148
1N5357A
MC1723
MRF154
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igbt dimmer
Abstract: IGBT light DIMMER "reverse phase control" igbt dimmer reverse phase control igbt dimmer DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs light dimmer igbt STGP10N50 AN486 topologies pulse transformer driver IGBT APPLICATION LC filter dimmer Triac
Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles
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FERRITE TRANSFORMER 500W
Abstract: RF Amplifier 500w 175 mhz arf450 500w class d amplifier
Text: ARF450 Common Source Push-Pull Pair ARF450 BeO RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 150V 500W 11405 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
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ARF450
120MHz
ARF450
F-33700
FERRITE TRANSFORMER 500W
RF Amplifier 500w 175 mhz
500w class d amplifier
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Untitled
Abstract: No abstract text available
Text: PD -94908A IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode
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-94908A
IRG4BC20MDPbF
10kHz
O-220AB
10kHz)
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Untitled
Abstract: No abstract text available
Text: ARF450 Common Source Push-Pull Pair ARF450 Advanced Information - OTS BeO 11405 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 150V 500W 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull
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ARF450
120MHz
ARF450
F-33700
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AN1370
Abstract: AN-1370 LM5034 LM5034EVAL si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration
Text: National Semiconductor Application Note 1370 Dennis Morgan February 2005 Introduction slope compensation, direct interface with opto-coupler transistor, and thermal shutdown. The LM5034EVAL evaluation board provides the power supply design engineer with a fully functional 200W dual interleaved DC-DC power switching regulator using forward/
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LM5034EVAL
LM5034
CSP-9-111C2)
CSP-9-111S2)
CSP-9-111S2.
AN-1370
AN1370
AN-1370
si7866dp
SOT-23 P-MOSFET
optocoupler 8 pin configuration
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m lc 945
Abstract: transistor 9206 BFG590W marking code 3T3
Text: Product specification P hilips Sem iconductors BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG590W T1 • High transition frequency BFG590W/X T2 • Gold metallization ensures
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BFG590W
BFG590W/X;
BFG590W/XR
BFG590W/X
BFG590W/XR
OT343
OT343R
BFG590W
m lc 945
transistor 9206
marking code 3T3
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Untitled
Abstract: No abstract text available
Text: M ay 1997 MgLMicro Linear ML65T245 3.3V High Speed Octal Buffer Transceiver GEN ERAL D ESCRIPTION FEATURES The M L65 T2 45 is a non-inverting octal buffer transceiver. The high operating frequency 6 6 M H z driving a 50pF load and low propagation delay (2ns) make it ideal for
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ML65T245
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Untitled
Abstract: No abstract text available
Text: M ay 1997 MgLMicro Linear ML65T244 3.3V High Speed Dual Quad Buffer/Line Driver GEN ERAL D ESCRIPTION FEATURES The M L65 T2 44 is a non-inverting dual quad buffer/line driver. The high operating frequency 6 6 M H z driving a 50pF load and low propagation delay (2ns) make it ideal
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ML65T244
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42568
Abstract: HN 17
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon Low N o ise T ransistors MRF2947AT1 ,T2 MRF2947RAT1 ,T2 Motorola’s MRF2947 device contains two high performance, low-noise NPN silicon bipolar transistors. This device has two 941 die housed in the high
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MRF2947
MRF2947AT1
MRF2947RAT1
42568
HN 17
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transisto ot 306
Abstract: 1147 x motorola
Text: MOTOROLA O rder this docum ent by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise Transistors M R F 2947A T 1 ,T 2 M R F 2947R A T 1 ,T 2 M otorola’s MRF2947 device contains two high performance, low -noise NPN silicon bipolar transistors. This device has two 941 die housed in the high
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MRF2947/D
MRF2947
transisto ot 306
1147 x motorola
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185t2
Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
Text: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2
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BDY26
BDY27
87-5W_
CB-19
185t2
bdy28
BF 184
184T2
185T2A
185T2B
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