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    Text: T O S H IB A G T20G10KSM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 S M ) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) Enhancement-Mode


    OCR Scan     		PDF T20G10KSM GT20G10KSM