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    T2D 6 DIODE Search Results

    T2D 6 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    T2D 6 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T2D DIODE

    Abstract: RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE RFN10
    Text: Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10 T2D ①


    Original     		RFN10T2D RFN10 O-220) O220FN R1120A T2D DIODE RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE PDF

    RFN-10

    Abstract: T2D DIODE RFN10 T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode
    Text: RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10


    Original     		RFN10T2D RFN10 O-220) O220FN R1120A RFN-10 T2D DIODE T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode PDF

    T2D DIODE

    Abstract: T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2


    Original     		AEC-Q101 RFN10T2DFH RFN10 O-220) O220FN R1120A T2D DIODE T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    T2D 95

    Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
    Text: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In


    Original     		ML65244, ML65245 ML65541 100pF T2D 95 74FCT244D T2D 70 diode t2d diodes SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541 PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    T2D 53

    Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
    Text: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In


    Original     		ML65244, ML65245 ML65541 100pF T2D 53 transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65541 PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    T2D DIODE

    Abstract: T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06
    Text: S IEM EN S BA 389 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 1 GHz • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 389 yellow Q62702-A732 DO-35 DHD


    OCR Scan     		Q62702-A732 EHA070GI DO-35 fl235bOS f-100 fi53SbDS 00bb5b5 T2D DIODE T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06 PDF

    T2D DIODE

    Abstract: T2D 83 diode T2D DIODE 69 T2D 83 T2D 17 DIODE diode T2D T2D DIODE 60 T2D 51 DIODE T2D DIODE 94 T2D 94
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code E T T~ II SECTION X-X LEAD PROFILE FEA TU RES G ood optical to m echanical alignm ent


    OCR Scan     		940nm T2D DIODE T2D 83 diode T2D DIODE 69 T2D 83 T2D 17 DIODE diode T2D T2D DIODE 60 T2D 51 DIODE T2D DIODE 94 T2D 94 PDF

    zener 1B7

    Abstract: 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5223 1N5226 1N5223A 1N5224 1N5258
    Text: blE D • M4Tb2DS OOIMOSS T2D ■ H I T M HITACHI/ OPTOELECTRONICS Appendix D 500-mW Zener Regulator Diodes 1N5223 through 1N5258 1N5223A through 1N5258A 1N5223B through 1N5258B Table D - l Absolute M axim um Ratings Item Symbol Rating Unit Notes Forward Voltage


    OCR Scan     		500-mW 1N5223 1N5258 1N5223A 1N5258A 1N5223B 1N5258B 1N5251 1N5252 1N5253 zener 1B7 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5226 1N5224 PDF

    westcode stud base diode SI 2

    Abstract: 140ak
    Text: TECHN IC AL WESTCODE SEMICONDUCTORS PUBLICATION D P40 IS S U E 1 March, 1ÖBO Stud-Base Silicon Rectifier Diodes Type PCN/PCR040 70amperes average: up to 1600 volts RATING S Maximum values at 175'5C Tj unless stated otherwise R A TIN G SVMBOL C O N D IT IO N S


    OCR Scan     		PCN/PCR040 70amperes 2Q49A5 s-2710 -B5rt175cC westcode stud base diode SI 2 140ak PDF

    T2D 62 diode

    Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
    Text: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan     		2SK2645-01MR O-220F15 T2D 62 diode T2D 98 DIODE T2D 70 diode T2D 27 diode PDF

    T2D 85 diode

    Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
    Text: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V


    OCR Scan     		IRLS510A O-220F 71b4m2 D3T23b T2D 85 diode T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54 PDF

    34B SOT

    Abstract: NDT455N
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDT455N NDT455N OT-223 34B SOT PDF

    T2D 24 DIODE

    Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDT455N OT-223 NDT455N OT-223 T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D PDF

    T2D 96 diode

    Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
    Text: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION


    OCR Scan     		M54HC365/366 M74HC365/366 HC365 HC366 HC365 M54/74HHARACTERISTICS T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96 PDF

    UC1838

    Abstract: No abstract text available
    Text: UNITRODE CORP /UN ITRODE IC ^2» D I 'iaMflSl'J QGQ'l'IBS 3 • UNI LINEAR INTEGRATED CIRCUITS 7 ^ r v / '3 V UC1838 UC2838 UC3838 Magnetic Amplifier Controller F EA TU RES • Independent 1% Reference • Two U n com m itted, Identical O perational A m p lifie rs


    OCR Scan     		UC1838 UC2838 UC3838 PDF

    30PF

    Abstract: DS3893A DS3893AV V20A
    Text: DS3893A National Semiconductor DS3893A BTL TURBOTRANSCEIVER General Description The TURBOTRANSCEIVER is designed for use in very high speed bus systems. The bus terminal characteristics of the TURBOTRANSCEIVER are referred to as "Backplane Transceiver Logic” BTL . BTL is a new logic signaling stan­


    OCR Scan     		DS3893A TL/F/B69B-9 0Q740bl 30PF DS3893AV V20A PDF

    T2D 70 diode

    Abstract: T2D DIODE
    Text: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State


    OCR Scan     		LTC1320 RS422/RS562 RS422 RS562 LT1054 551fiMbfl T2D 70 diode T2D DIODE PDF

    T2D 85 diode

    Abstract: FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode
    Text: MP7628 -A ^ L Quad Multiplying 8-Bit Digital-to-Analoc Converter Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • Microprocessor Controlled Gain anci Attenuation Circuits • Microprocessor Controlled/Program liable Power Supplies


    OCR Scan     		MP7628 MP7628 T2D 85 diode FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode PDF

    diode t2d 77

    Abstract: T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80
    Text: MP7628 g » E X 4 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter R FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies


    OCR Scan     		MP7628 MP7529B P7628 diode t2d 77 T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80 PDF

    MP7680JN

    Abstract: No abstract text available
    Text: MP7680 5 V CM O S 12-Bit Quad Double-Buffered Multiplying Digita!-to-Analog Converter 2B TEX AR FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs


    OCR Scan     		MP7680 12-bit MP7680 MP7680JN PDF