marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
|
Original
|
1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
|
PDF
|
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
|
PDF
|
T2D 95
Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Text: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
|
Original
|
ML65244,
ML65245
ML65541
100pF
T2D 95
74FCT244D
T2D 70 diode
t2d diodes
SRAM 256KB 6ns
signal path designer
T2D 83 diode
transistor t2d
FCT541
|
PDF
|
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
|
Original
|
1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
|
PDF
|
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
|
PDF
|
T2D 53
Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
Text: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
|
Original
|
ML65244,
ML65245
ML65541
100pF
T2D 53
transistor t2d
diode T2D
MIPS R4000
74FCT244D
T2D 83 diode
FCT541
ML65244
ML65541
|
PDF
|
T2D DIODE
Abstract: T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06
Text: S IEM EN S BA 389 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 1 GHz • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 389 yellow Q62702-A732 DO-35 DHD
|
OCR Scan
|
Q62702-A732
EHA070GI
DO-35
fl235bOS
f-100
fi53SbDS
00bb5b5
T2D DIODE
T2D 70 diode
T2D 40 DIODE
T2D 65 DIODE
diode T2D
T2d 03 diode
T2D 09 diode
T2D 75 diode
diode t2d 05
T2D DIODE 06
|
PDF
|
zener 1B7
Abstract: 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5223 1N5226 1N5223A 1N5224 1N5258
Text: blE D • M4Tb2DS OOIMOSS T2D ■ H I T M HITACHI/ OPTOELECTRONICS Appendix D 500-mW Zener Regulator Diodes 1N5223 through 1N5258 1N5223A through 1N5258A 1N5223B through 1N5258B Table D - l Absolute M axim um Ratings Item Symbol Rating Unit Notes Forward Voltage
|
OCR Scan
|
500-mW
1N5223
1N5258
1N5223A
1N5258A
1N5223B
1N5258B
1N5251
1N5252
1N5253
zener 1B7
125c79
hitachi suffix
Hitachi "v suffix"
IN5223B
1N5226
1N5224
|
PDF
|
T2D 62 diode
Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Text: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated
|
OCR Scan
|
2SK2645-01MR
O-220F15
T2D 62 diode
T2D 98 DIODE
T2D 70 diode
T2D 27 diode
|
PDF
|
T2D 22 diode
Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA
|
OCR Scan
|
BDT60
BDT60B
BDT61,
BDT61A,
BDT61B
BDT61C.
BDT60
T2D 22 diode
T2D 56 DIODE
T2D DIODE
diode t2d 05
T2D 70 diode
|
PDF
|
34B SOT
Abstract: NDT455N
Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
|
OCR Scan
|
NDT455N
NDT455N
OT-223
34B SOT
|
PDF
|
T2D 24 DIODE
Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
|
OCR Scan
|
NDT455N
OT-223
NDT455N
OT-223
T2D 24 DIODE
T2d 43 diode
T2D 65 DIODE
T2d 61 diode
T2D DIODE 42
T2D DIODE 32
T2D 04 DIODE
diode T2D
|
PDF
|
UC1838
Abstract: No abstract text available
Text: UNITRODE CORP /UN ITRODE IC ^2» D I 'iaMflSl'J QGQ'l'IBS 3 • UNI LINEAR INTEGRATED CIRCUITS 7 ^ r v / '3 V UC1838 UC2838 UC3838 Magnetic Amplifier Controller F EA TU RES • Independent 1% Reference • Two U n com m itted, Identical O perational A m p lifie rs
|
OCR Scan
|
UC1838
UC2838
UC3838
|
PDF
|
T2D 96 diode
Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
Text: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION
|
OCR Scan
|
M54HC365/366
M74HC365/366
HC365
HC366
HC365
M54/74HHARACTERISTICS
T2D 96 diode
T2D 78 diode
T2D 44 diode
t2d 76 diode value
T2D DIODE 29
T2D DIODE
T2D 36 DIODE
T2D 19 diode
T2D 53 DIODE
T2D DIODE 96
|
PDF
|
|
T2D 70 diode
Abstract: T2D DIODE
Text: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State
|
OCR Scan
|
LTC1320
RS422/RS562
RS422
RS562
LT1054
551fiMbfl
T2D 70 diode
T2D DIODE
|
PDF
|
MP7680JN
Abstract: No abstract text available
Text: MP7680 5 V CM O S 12-Bit Quad Double-Buffered Multiplying Digita!-to-Analog Converter 2B TEX AR FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
|
OCR Scan
|
MP7680
12-bit
MP7680
MP7680JN
|
PDF
|
T2D 24 DIODE
Abstract: T2d 43 diode
Text: MP7680 5 V C M O S 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter FEATURES BENEFITS • • • • • • • • • • Reduced Board Space; Lower System Cost. • Independent Control of DACs • Excellent DAC-to-DAC Matching and Tracking
|
OCR Scan
|
MP7680
12-Bit
12-bit
3455blfl
3422bl6
QDQ741Q
T2D 24 DIODE
T2d 43 diode
|
PDF
|
T2D 52 diode
Abstract: T2D 00 DIODE T2D 80 diode am/T2D DIODE
Text: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N» E 722 1 DUAL ISOLATED DC/DC CONVERTER FEATURES APPLICATIONS • DUAL ISOLATED ±5V TO ±16V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE: 8000V Test • INDUSTRIAL PROCESS CONTROL
|
OCR Scan
|
40V/60HZ
T2D 52 diode
T2D 00 DIODE
T2D 80 diode
am/T2D DIODE
|
PDF
|
T2D 87 diode
Abstract: T2D 49 DIODE Rectifier t2d
Text: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAO HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs
|
OCR Scan
|
IRHM7130
IRHM8130
1x100
1x10s
1X106
IRHM7130D
IRHM7130U
O-254
IL-S-19600
H-202
T2D 87 diode
T2D 49 DIODE
Rectifier t2d
|
PDF
|
HP5082-2835
Abstract: MP7680 MP7680JE MP7680JN MP7680KE MP7680KN
Text: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
|
OCR Scan
|
12-bit
TTL75
MP7680
34B2bia
3425fcilfl
00G77Ã
HP5082-2835
MP7680
MP7680JE
MP7680JN
MP7680KE
MP7680KN
|
PDF
|
T2D 44 diode
Abstract: T2D DIODE 44 T2D DIODE 42 T2d 03 diode T2D 37 DIODE T2D DIODE 43 T2D 24 DIODE T2D DIODE 32 T2D diode t2d 17 diode
Text: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
|
OCR Scan
|
MP7680
12-Bit
TTL75
22blA
00Q77
00G77
T2D 44 diode
T2D DIODE 44
T2D DIODE 42
T2d 03 diode
T2D 37 DIODE
T2D DIODE 43
T2D 24 DIODE
T2D DIODE 32
T2D diode
t2d 17 diode
|
PDF
|
digi20
Abstract: LM-0355MVWB
Text: ¡E D Light Emitting D io d e s / L e a d e d ty p e Pin Arrangement Diagram/Internal Circuit Diagram Single Digit LED Numeric Displays • L A 301 B/L series •L A -4 0 1 D/N series Pin Arrangement Diagram Internal Circuit Diagram 9 Pin Arrangement Diagram
|
OCR Scan
|
|
PDF
|
8408B
Abstract: 8408a PMI OP 490
Text: DAC-8408 P M Ï QUAD 8 -BIT MULTIPLYING CMOS D/A CONVERTER WITH MEMORY 1 iW o n o l i t h i c s I FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • Four DACs in a 28 Pin, 0.6 Inch Wide DIP or 28 Pin JEDEC Plastic Chip Carrier
|
OCR Scan
|
DAC-8408
1/27rRC.
475fi
8408B
8408a
PMI OP 490
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OPA336 OPA2336 OPA4336 B U R R -B R O W N 0 [ ] SINGLE-SUPPLY, McroPOWER CMOS OPERATIONAL AMPLIFIERS MieroA mpHfier* Series FEATURES DESCRIPTION • SINGLE SUPPLY OPERATION OPA336 series micropower CMOS operational ampli fiers are designed for battery powered applications.
|
OCR Scan
|
OPA336
OPA2336
OPA4336
OPA336
17313b5
|
PDF
|