T30PF Search Results

ahr 23

Contextual Info: I N T E G R A T E » DE VI CE böE D • HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM 4A2 S 77 1 O D I M I? ? nt ■ PRELIMINARY IDT7026S/L Integrated Device Technology, Inc FEATURES: multiplexed bus compatibility IDT7026 easily expands data bus width to 32 bits or

max8021

Abstract: 690a max690a
Contextual Info: 19-4333; Rev2:4/93 Microprocessor Supervisory Circuits JFeatures ♦ Precision Supply-Voltage Monitor: 4.65V for MAX690A/MAX802L/MAX805L 4.40V for MAX692A/MAX802M These parts provide four functions: ♦ Battery-Backup Power Switching 1 A reset output during power-up, power-down, and

7M206S120

Contextual Info: IDT7M205S IDT7M206S 8KX9&16KX9 CEMOS PARALLEL IN-OUT FIFO MODULE Integrated Device Technology» Inc. FEATURES: • • ■ • ■ • • • • • • First-In/First-Out memory module 8K x 9 organization IDT7M205S 16K x 9 organization (IDT7M206S)

inmos T414

Abstract: IMS T414 Transputer T414 IMST414 T414 inmos transputer reference manual transputer 7FFFFF84 22FC
Contextual Info: INMOS CORP 10E D | 4aG2b0fl 00G33S0 3 1 Ö nm oS C h a p te r 4 T - ^ ? -/7 -5 7 9 IMS T414 engineering data 107 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IN M O S CORP "T-Vf-/7 * £ 7 40 02 1, 68 0 0 0 3 3 5 1 I I s I

Contextual Info: jvwvyLwvx 19-4334; Rev. 5; 9/95 Low -C ost, fiP Supervisory C ircuits F e a tu re s The MAX705-MAX708/MAX813L m icroprocessor pP supervisory circuits reduce the complexity and number of components required to monitor power-supply and battery functions in |jP systems. These devices signifi­

55D8

Abstract: circuit diagram for je 182 g DG181 DG180 DG180-191 DG182 DG183 DG184 DG185 DG186
Contextual Info: Intersil Hlgh-Rellabllity Products DG180-191 U High Reltfnnfy High-Speed Driver qV ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analoggates consist of 2 or 4 N-channel junction-type field-effect transistors JFET) designed to function as electronic switches. Level-shifting

Contextual Info: 22EDI EDI8C32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit SRAM 128Kx32 CMOS High Speed Static RAM Features The EDI8C32128C, a high speed, high performance, four megabit density Static RAM organized as 128Kx32 bits, contains four 128Kx8 SRAMs mounted in a package.

siemens modules GR 60 48 V 120 A

Abstract: CDC2510A siemens GR 60 48 V
Contextual Info: 3.3V 168 pin Registered SDRAM Modules 64MB, 128MB, 256MB & 512MB Density HYS72V8200GR-8 HYS72V8201GR-8 HYS72V16200GR-8 HYS72V32200GR-8 HYS72V32201 GR-8 HYS72V64200GR-8 Preliminary Information Rev. 1.0 • 168 Pin JEDEC Standard, Registered 8 Byte Dual-ln-Line SDRAM Module

inmos transputer C011

Abstract: imsc011
Contextual Info: IN MO S CORP IDEI D | 4ñ05tiññ OO^ti^g 1 j[ te m o s_ Chapter - 3 ' ¿ - Q 3 • IMS C011 engineering data 249 INflOS CORP T-J?2.-33~03 250 1 i a E ; j I MflOSböö D Q 0 3 Î H 3

X2816

Abstract: 6502 CPU architecture block diagram TF 6221 HEN LED display rm65 Seiki STP H 200 R6530 hall marking code A04 vacuum tube applications data book National Semiconductor Linear Data Book Futaba 9 bt 26
Contextual Info: $5.00 1984 DATA B O O K Second Edition Rockwell International Semiconductor Products Division Rockwell International Corporation 1984 All Rights Reserved Printed in U.S.A. Order No. 1 March, 1984 Rockwell Semiconductor Products Division is headquartered in Newport Beach,

tws 418

Abstract: 16384-WORD
Contextual Info: HM100494 Series 16384-word x 4-bit Fully Decoded Random Access Memory Description The HM100494 is E C L 100K compatible, 16384-word by 4-bits read/write random access memory developedforhigh speed systems such as scratch pads and control/buffer storage. Features

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.

inmos t212 transputer

Abstract: inmos transputer reference manual series T212 data IMST212 INMOS 0D0341C Inmos T212
Contextual Info: INHOS CORP GOUriOS • 10E D I Chapter 5 4fl05baa 0DD3M0fl fl | j 'T - ¥ 1 - / 7 - S ’ / IMS T212 engineering data 165 INMOS CORP 7- W -/?.&/ IDE D § 4ö0Sböfl 0DD340C1 0 | 166 1 _ Introduction R e s e tA n a ly s e E r r o i"