GR42-6
Abstract: 2j 103k GR43-2 GHM3145 GHM3045 rr 102k 2kv rr 681k- 1kv capacitor GRM42-6 rr 471k 1kv GRM40B103K
Text: This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-4 This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor
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C02E-4.
C02E4
C02E-4
GRM33
GRM36YGRM44-1
GRM39YGRM44-1
GRM33
GRM40-024
GR42-6
2j 103k
GR43-2
GHM3145
GHM3045
rr 102k 2kv
rr 681k- 1kv capacitor
GRM42-6
rr 471k 1kv
GRM40B103K
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GRM230Y5V475Z16
Abstract: GR42-6 hr r 681k- 1kv GR40 MURATA HR R 221k 2kv GR42-2 grh110 GHM1540 GHM2143 B 473 M AC250 PT GHM3145
Text: This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-5 This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor
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C02E-5.
C02E5
C02E-5
GRM33
GRM36YGRM44-1
GRM39YGRM44-1
GRM36-019
GR36YGR44-1
GRM230Y5V475Z16
GR42-6
hr r 681k- 1kv
GR40 MURATA
HR R 221k 2kv
GR42-2
grh110
GHM1540
GHM2143 B 473 M AC250 PT
GHM3145
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t127b
Abstract: t2d t3d t122 25 10 Diode T3D 57 440MX 82440MX t127 Diode T3D 54 T122 T3D 62
Text: Intel 440MX Chipset Electrical and Thermal Specification Datasheet Addendum Product Features • ■ ■ ■ ■ Processor Host Bus Support — Optimized for these 100 MHz or 66 MHz processors: − Mobile Intel® Pentium® III Processor − Intel®Pentium III Processor – Low Power
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440MX
16-Mbit,
64-Mbit,
128-Mbit
33-MHz
t127b
t2d t3d
t122 25 10
Diode T3D 57
82440MX
t127
Diode T3D 54
T122
T3D 62
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KT266
Abstract: T3D 43 diode CY28326 CY28354 CY28354-400 ILB1206 KTT880 2726G
Text: CY28354-400 210 MHz 24 Output Buffer for 4-DDR DIMMS for VIA Chipsets Support Features Functional Description • Supports VIA PRO 266, KT266 and P4x266 The CY28354-400 is a 2.5V buffer designed to distribute high-speed clocks in PC applications. The part has 24 outputs
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CY28354-400
KT266
P4x266
CY28354-400
CY28326
PTT880
KTT880
12-output
266-MHz,
T3D 43 diode
CY28354
ILB1206
2726G
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KT266
Abstract: CY28326 CY28354 CY28354-400 ILB1206 KTT880
Text: CY28354-400 210 MHz 24 Output Buffer for 4-DDR DIMMS for VIA Chipsets Support Features Functional Description • Supports VIA PRO 266, KT266 and P4x266 The CY28354-400 is a 2.5V buffer designed to distribute high-speed clocks in PC applications. The part has 24 outputs
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CY28354-400
KT266
P4x266
CY28354-400
CY28326
PTT880
KTT880
12-output
266-MHz,
CY28354
ILB1206
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t3d 66
Abstract: T3D 64 737 s1g t3d 29 T3D 90
Text: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE
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N2200
N3300
N4200
N4700
N5600
t3d 66
T3D 64
737 s1g
t3d 29
T3D 90
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T3D DIODE
Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
Text: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns
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0003b27
TMPD459
TMPD914
TMPD2835
TMPD2836
TMPD2837
TMPD2838
TMPD4148
TMPD4150
TMPD4153
T3D DIODE
T3D 45 diode
diode T3D
diode T3D 25
T3D 40 DIODE
Diode T3D 08
T3D 18 diode
T3D 77 diode
Diode T3D 30
Diode T3D 35
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2sd1047 equivalent
Abstract: 2sb817 equivalent T3D 59 T3D 90 STK3042 stk3062 Sanyo STK 2SB631 T3D 47 STK3102
Text: SANYO SEMICONDUCTOR CORP b3E D m 7 tlci707b OOllltH GTH TSAJ S T K Audio Power Amplifier STK3042 IH Series ★ 2 c h . / 1 package, ± Power Supply ★ V o l t a g e Amp I if ier ★ T H D = 0. 005% Maximum Ratings Recommended Operating Conditions m Mode 1
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STK3042
20kHz
STK3042HI
STK3062n
STK3082IE
STK3102DI
STK3122m
STK3152IH
Manuf01-W\iâ
2SD894
2sd1047 equivalent
2sb817 equivalent
T3D 59
T3D 90
stk3062
Sanyo STK
2SB631
T3D 47
STK3102
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Untitled
Abstract: No abstract text available
Text: 1997 • SHORT FORM CATALOG SENSITRON SEMICONDUCTOR BIPOLAR POWER TRANSISTORS NPN, TO-257 SHD4261 SHD4262 CONTIN. COLLECT. CURRENT COLLECT. TO EMITTER VOLTAGE COLLECT. TO BASE VOLTAGE EMITTER TO BASE VOLTAGE VCEO v CBO v EBO Volts Volts Volts Amps 80 80
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O-257)
SHD4261
SHD4262Â
2N3421
2N6301
O-257
2N3741
2N6193
2N3721
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Untitled
Abstract: No abstract text available
Text: For use with pin headers shown on pages F8 to FI 2. Can be fitted and removed by hand. An alternative on-board programming method to DIL switches. Open top for test probe. Choice of plating finish. PITCH J u m p e r S o c k e t O p e n Top 2mm M22 C onnectors
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M22-301
60liLl4
M22-218
M22-216
M22-21Ã
M22-542
M22-634
M22-636
M22-201
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T3D 77
Abstract: OM7612NM Adjustable negative Voltage Regulator 50v LM137HV T3D 42
Text: OM7612NM SURFACE MOUNT 1.5 AMP HIGH VOLTAGE NEGATIVE ADJUSTABLE REGULATOR Three Terminal, High Voltage, Precision Adjustable Negative Voltage Regulator In Hermetic Surface Mount Package FEATURES • • H erm etic S u rfac e M o un t P a c k a g e A d justab le O utp u t V o ltag e
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OM7612NM
LM137HV
534-5776FAX
T3D 77
OM7612NM
Adjustable negative Voltage Regulator 50v
LM137HV
T3D 42
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T3D 34
Abstract: T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007
Text: DISC CERAMIC CAPACITORS TUSONIX Ceramic capacitors, because of their inherent reliability, small size, low cost and wide choice of elec trical characteristics available, now outsell all other types combined. TUSONIX manufactures both fixed and variable ceramic capacitors in
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N1500
1B11R17
T3D 34
T3D 67
T3D 87
t3d 99
T3D 79
t3d 96
T3D 64
T3D 63
Tusonix
u1g 007
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T3D 34
Abstract: No abstract text available
Text: High-reliability capacitors WIMA Snubber Cap High performance IGBT-snubber capacitors • Low inductive construction with end-surface contacts. ■ Double-sided metallization for high pulse ratings. ■ Low-loss polypropylene dielectric. ■ Internally series connected for high
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T3D 54 DIODE
Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
Text: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbSBT31
002Cm50
BUK453-100A
BUK453-1OOB
BUK453
-100A
-100B
T3D 54 DIODE
Diode T3D 56
Diode T3D 24
T3D 75 diode
T3D 77 diode
T3D 01 DIODE
T3D 55 diode
Diode T3D 54
T3D 20 diode
T3D+54+DIODE
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Marking 3D TO-236AB
Abstract: T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77
Text: SPRAGUE/SENICOND 8514019 GROUP TBD SPRAG UE. D • SS13Û5D □003t.3D S E M IC O N D S / IC S 93D 5 03630 T ^ { \ r ^ f O SMALL-OUTLINE D IO D ES Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C vf Device Type Description Marking BAR18 Schottky
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BAR18
BAS16
BAS19
BAS21
BAV701
238BMM
23881N
Marking 3D TO-236AB
T3D 87
pro-electron
T3D zener
ZENER A12
T3D 91
t3d 96
T3D 77
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Untitled
Abstract: No abstract text available
Text: m h m MTA-100 and MTA-156 Connectors and Headers; CST-100 Connectors and Headers and SL-156 Connectors Catalog 82056 R evised 1-96 CST-100 Shrouded Headers— Straight and Right Angle M aterial and Finish Right Angle .0 2 5 [0 .6 4 ] Square Straight Post (.0 2 5 [0 .6 4 ] Square)
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MTA-100
MTA-156
CST-100
SL-156
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T3D 62
Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66
Text: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator
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AT-41400
AT-41400
Rn/50
MM475flM
0017bE3
17L24
T3D 62
t3d 98
T3D 87
AT-41400-GP4
t3d 54
chip die npn transistor
t3d 69
T3D 83
t3d 66
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T3D DIODE
Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are
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BDT65;
BDT65B;
T0-220
BDT64;
BDT64A;
BDT64B
BDT64C.
BDT65
7z82329
T3D DIODE
T3D 77
T3D 65 diode
Diode T3D 54
T3D 54 DIODE
T3D 77 diode
T3D 01 DIODE
Diode T3D 57
BDT64C
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Diode T3D 57
Abstract: T3D 67 diode T3D 66 diode T3D 58 diode T3D 78 diode T3D 68 diode HA-2520/T3D 39 diode U/25/20/TN26/15/850/Diode T3D 57
Text: HV77 S u p e r te x in c . 32 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed*
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64-Channel
MIL-STD-883
HV7708DG
HV7708PG
HV7708X
RBHV7708DG
HV577.
desig43/22
t29/36
t28/37
Diode T3D 57
T3D 67 diode
T3D 66 diode
T3D 58 diode
T3D 78 diode
T3D 68 diode
HA-2520/T3D 39 diode
U/25/20/TN26/15/850/Diode T3D 57
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ITT 7400
Abstract: OZ 9906
Text: CHDII H igh Density PCB C onnectors The Cannon High Density CHDII connector series Typically, the pin side of the connector is mounted supports the high I/O signals required on today's on the backplane utilizing press-fit compliant pin printed circuit boards.
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CHDI1130403
CHD130405-1
M772b5T
ITT 7400
OZ 9906
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Untitled
Abstract: No abstract text available
Text: O K I electronic components KGF1191_ Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1191 is a tw o-stage small-signal am plifier, w ith frequencies ranging from the UHF band to the L band, that features low voltage operation, low -current dissipation, high gain, and high
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KGF1191_
KGF1191
0G22bÃ
KGF1191
D022t
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs 1996.6.11 MÇM5V4R08 J-10,-12,-15 PRELIM I N A R Y Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R0SJ is a family o f 524288-word by 8-bit static
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M5V4R08
4194304-BIT
524288-WORD
M5M5V4R08J
36-pin
A0-18
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Untitled
Abstract: No abstract text available
Text: 8-C H AN N EL SOURCE D R IV E R S This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series UDN2580A/LW source drivers can drive incandescent, LED, or vacuum
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UDN2580A/LW
2580/85L
25S0/85A
UDN2580A
UDN2580LW
DSD433Ã
00D77b3
0S0433S
UDN2580A
B-1458A
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier INTERNATIONAL RECTIFIER bSE SERIES MT-K Power Modules THREE PHASE AC SWITCH 50A 90A 100A Features ■ MÖ5SMS2 0Dlb554 45e! ■ INR Package fully compatible with the industry standard IN T-A -pak power modules series ■ High thermal conductivity package, electrically
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0Dlb554
104MT.
554S2
001bS31
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