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    MW6S004N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 0, 1/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


    Original
    PDF MW6S004N MW6S004NT1 MW6S004N

    MW6S004N

    Abstract: MW6S004NT1 t490 600B A113 A114 A115 AN1955 C101 CDR33BX104AKWS
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 1, 4/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


    Original
    PDF MW6S004N MW6S004NT1 MW6S004N MW6S004NT1 t490 600B A113 A114 A115 AN1955 C101 CDR33BX104AKWS

    j3068

    Abstract: 1990 1142
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 0, 12/2005 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original
    PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010N j3068 1990 1142

    atc 17-33

    Abstract: 600B A113 A114 A115 AN1955 C101 JESD22 MRF6S20010GNR1 MRF6S20010N
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


    Original
    PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1 atc 17-33 600B A113 A114 A115 AN1955 C101 JESD22 MRF6S20010GNR1 MRF6S20010N