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    T4C MARKING Search Results

    T4C MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    T4C MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY |W|IC=RC3N 512K M T4C 8 512/3 L WIDE DRAM X 8 512K x 8 DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin ZIP (DB-3) 28-Pin SOJ (DC-4) MARKING • Timing 60ns access 70ns access 80ns access • MASKED WRITE


    OCR Scan     		PDF MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3 WT4C6512/3 S1993,

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M T4C 10016/7 16 MEG x1 DRAM FAST PAGE MODE: MT4C10016 STATIC COLUMN: MT4C10017 FEATURES • Industry standard xl pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single power supply: +5V±10% or +3.3V±10%


    OCR Scan     		PDF MT4C10016 MT4C10017 250mW 4096-cycle 475mil) 400mil) MT4C10016/7

    Untitled

    Abstract: No abstract text available
    Text: ED06DRAM TECHNOLOGY, INC. DRAM M T4C 16270 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		PDF ED06DRAM 512-cycle 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M T4C 1672 64K x 16 DRAM DRAM FAST PAGE MODE, DUAL CAS FEATURES • Industry standard xl6 pinouts, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 3mW standby; 350mW active, typical


    OCR Scan     		PDF 350mW 256-cycle 100ns 400mil) 475mil) 40-Pin DQ9-DQ16) MT4C1672

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CZR M T4C 10016/7 16 MEG X 1 DRAM FAST PAGE MODE: MT4C10016 STATIC COLUMN: MT4C10017 FEATURES • Industry standard xl pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single power supply: +5V±10% or +3.3V±10%


    OCR Scan     		PDF MT4C10016 MT4C10017 250mW 4096-cycle 475mil) 400mil) A0-A10/A11) 32ms/64ms, MT4C10016/7 2048-cycle

    Untitled

    Abstract: No abstract text available
    Text: • h ÉidMiuiilBHááttaSflÉ BflE D MICRON TECHNOLOGY INC b llIS H T G G O E Tll =i ■ MRN ADVANCE ÉtaB*6â*ù^ÂeeÂfcâi - uMMüff T4C-2Z-/< 16K X 16 SRAM SYNCHRONOUS SRAM W ITH CLOCKED, REGISTERED INPUTS FEATURES • • • • OPTIONS MARKING « Timing


    OCR Scan     		PDF DQ12C DQ13C DQ14C 52-pin

    dram zip

    Abstract: No abstract text available
    Text: PRELIMINARY U | | C n D N 256K X M T4C 16260/1 16 W ID E DRAM 256K X 16 DRAM WIDE DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF 500mW 024-cycle MT4C16261 40-Pin MT4C16260/1 dram zip

    4C8512

    Abstract: No abstract text available
    Text: ADVANCE 512K M T4C 8 512/3 S W IDE DRAM X 8 512K x 8 DRAM WIDE DRAM EXTENDED REFRESH SELF REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • A ddress entry: ten row -addresses, nine colum naddresses


    OCR Scan     		PDF MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3 4C8512

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE 4 MEG x 1 FPM DRAM MICRON I TECHNOLOGY, INC. M T4C 1004J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C1004J or 128m s (M T4C1004J L only) • Industry-standard pinout, tim ing, functions and packages • H igh-perform ance CM OS silicon-gate process


    OCR Scan     		PDF 1004J 024-cycle MT4C1004J) T4C1004J 20/26-Pin

    EDO DRAM

    Abstract: MT4C4007JDJ-6L MT4C4007JDJ-6
    Text: 1 MEG x 4 EDO DRAM V IIC Z R C H V S DRAM M T4C 4007J FEATURES PIN ASSIGNMENT (Top View Single+5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible Refresh modes: RAS#-ONLY, CAS#-BEFORE- RAS#


    OCR Scan     		PDF 4007J 024-cycle 128ms 20/26-Pin 128ms EDO DRAM MT4C4007JDJ-6L MT4C4007JDJ-6

    LM 8512

    Abstract: T4C marking marking t4c
    Text: ADVANCE M T4C 8512/3 S 512K x 8 W IDE DRAM M IC R O N WIDE DRAM 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM O S silicon-gate process


    OCR Scan     		PDF MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3S MT4C8512/3 LM 8512 T4C marking marking t4c

    Untitled

    Abstract: No abstract text available
    Text: M ’ I C R O N 1 MEG X 1 FPM D R A M DRAM M T4C 1004J FEATURES • 1,024-cycle refresh distributed across 16ms M T4C1004J or 128ms (M T4C1004J L only) • Industry-standard pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process


    OCR Scan     		PDF 024-cycle T4C1004J) 128ms T4C1004J 1004J 20/26-Pin A10CL

    T4C16257DJ

    Abstract: t4c16257 T4C16257DJ-7
    Text: l^ lld R O N 256K DRAM M T4C 16257 X 16 DRAM 256K x 16 DRAM 5V, FAST PAGE MODE • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical


    OCR Scan     		PDF 512-cycle 40-Pin 40/44-Pin MT4C16257 T4C16257DJ t4c16257 T4C16257DJ-7

    Untitled

    Abstract: No abstract text available
    Text: MICRON S E M I C O N D U C T O R INC b3E D • blllSHT MICRON I DDDfih22 T45 M M R N M T4C 8512/3 L m O K vX R8 WIDE \A/inP DRAM nOAM 512K S ili ICONOUCTOR MC WIDE DRAM 512K X 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and


    OCR Scan     		PDF DDDfih22 MT4G8513 024-cyde MT4C6512/3 C1993. DGDflb37 MT4C8512/3L

    Untitled

    Abstract: No abstract text available
    Text: 1 M E G x 16 EDO DRAM V IIC Z R O N n P A V n * M M T4C 1M 16E 5 \ m M T4L C 1M 16E 5 FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single pow er supply (+3.3V +0.3V or 5V ±10%


    OCR Scan     		PDF 024-cycle 44/50-Pin 42-Pin

    ite 8512

    Abstract: LA 8512
    Text: ADVANCE M T4C 8 512/3 512K X 8 DR AM M IC R O N DRAM 512K x 8 DRAM FAST PAGE MODE • • • • • • • • OPTIONS Vcc [ 1 DQ1 [ 2 • M asked W rite N o t available A v ailab le P ack ages P lastic SO J 400 m il P lastic T SO P (400 m il) P lastic Z IP (375 m il)


    OCR Scan     		PDF 024-cy MT4C8512/3 MT4CB512/3 ite 8512 LA 8512

    T4C4001

    Abstract: No abstract text available
    Text: M T4C 4001J 1 MEG X 4 DRAM [MICRON 1 MEG x 4 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Ind u stry stan d ard x4 p in o u t, tim in g , fu n ctio n s and p ackages • H ig h -p erfo rm an ce, C M O S silico n -g a te p ro cess • Sin g le + 5 V ± 1 0 % p o w er sup p ly


    OCR Scan     		PDF 4001J 024-cy 20-Pin MT4C4001J T4C4001

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE WIDE DRAM 512K x 8 DRAM EXTENDED REFRESH SELF REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF MT4C8513 024-cycle 128ms 350mW 28-Pin CYCLE24 MT4C851Z/3S

    mt4c256

    Abstract: RCD 2226
    Text: ADVANCE 256K X M T 4C 16270/1 16 W IDE DRAM 256K X 16 DRAM WIDE DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process


    OCR Scan     		PDF 500mW 512-cycle MT4C16271 40-Pin mt4c256 RCD 2226

    RCD 2226

    Abstract: No abstract text available
    Text: ADVANCE M T 4 C 16256/7/8/9 256K X 16 DRAM p ilC Z R O IM DRAM 256K x 16 DRAM FAST PAGE MODE PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF 500mW 40-Pin 3C16256 T4C16257 RCD 2226

    MT4C16270DJ-7

    Abstract: No abstract text available
    Text: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I MT4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C16270 512-cycle MT4C16270DJ-7

    Untitled

    Abstract: No abstract text available
    Text: MICRON B M T4C16256/7/8/9 L 256K X 16 WIDE DRAM BCMICDNDUCTaH. WC WIDE DRAM 256K x 16 DRAM LOW POWÉR, EXTENDED REFRESH FEATURES MARKING • T im ing 60ns access 70ns access 80ns access • W rite Cycle Access BYTE o r W ORD via WE nonm askable BYTE or W ORD via CAS


    OCR Scan     		PDF T4C16256/7/8/9 T4C16257/9 T4C16258/9 512-cycle 500mW 40-Pin

    C5190

    Abstract: No abstract text available
    Text: M i r a r i M I . V J L Z m t 4 c i m i 6E5 S 1 MEG X 16 DRAM DRAM 1 MEG x 16 DRAM 5.0V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES * * * * * * * * * JEDEC- and industry-standard x l6 timing, functions, pinouts and packages H igh-perform ance CM OS silicon-gate process


    OCR Scan     		PDF 024-cycle 44/50-Pin C5190

    Untitled

    Abstract: No abstract text available
    Text: I^ IC R Q N 1 MEG DRAM 1 MEG X MT4C1026 X 1 DRAM 1 DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical


    OCR Scan     		PDF MT4C1026 175mW 512-cycle 18-Pin 20-Pin