2SC4116GR
Abstract: ADS varactor diode 15 K26 011110 drivers 5k21 KRY 112 46 KRY 112 75/1 TC9318FA tc9318 4bit counter KRY 112 75
Text: TOSHIBA TC9318FA/FB TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9318FA, TC9318FB SINGLE CHIP DTS MICROCONTROLLER DTS-21 The TC9318FA and TC9318FB are a 4bit CMOS microcontroller for signal chip digital tuning systems. It is capable of functioning at a low voltage of 3V and
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TC9318FA/FB
TC9318FA,
TC9318FB
DTS-21)
TC9318FA
TC9318FB
230MHz,
65-mm-pitch
2SC4116GR
ADS varactor diode
15 K26 011110 drivers
5k21
KRY 112 46
KRY 112 75/1
tc9318
4bit counter
KRY 112 75
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Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
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16-BIT,
PD42S16165L,
4216165Lare
uPD42S16165L
4216165L
50-pin
42-pin
6165L-A
L427525
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256KX4
Abstract: V53C104B V53C104 casco battery
Text: JVH VITEUC V53C104B HIGH PERFORMANCE, LO W POW ER 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60/60L 70/70L 80/80L Max. RAS Access Time, tp ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tp^)
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V53C104B
60/60L
70/70L
80/80L
V53C104BL
V53C104B-80
V53C104B-1
256KX4
V53C104
casco battery
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V52C8128
Abstract: V52C8128-80
Text: MOSEL- VITELIC V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 70 PRELIMINARY 80 10 Max. RAS Access Time, tRAc 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAc) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ )
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V52C8128
V52C8128
V52C8128-80
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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2n5484 equivalent
Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
Text: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G
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2N5484/D
O-226AA)
2n5484 equivalent
2N5486 MOTOROLA
2N5484
2N5486
2N5484 characteristics
2N5486 equivalent
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3240B
Abstract: No abstract text available
Text: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-381B Z Rev. 2.0 Jan. 7, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance.
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HM5241605C
072-word
16-bit
ADE-203-381B
Hz/57
44Rb203
3240B
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AD0832
Abstract: ISP-8A/600
Text: ISP-8A/600-I DESCRIPTION FEATURES SC/MP Simple Cost-effective M icroproc essor is a single-chip 8-bit microprocessor packaged in a standard, 40-pin, dual-in-line package. • Simpler interfacing • Bidirectional Tri-state 8-bit data bus • TTL-com patible inpul/output inter
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ISP-8A/600-I
40-pin,
16-bit
AD0832
ISP-8A/600
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PDF
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motorola application note mc14534
Abstract: 14584b MC14534 MC14518 eb47 mc1696 MCI4518 MC14508 mc14583b mecl data
Text: Order this document by EB47/D Direct Count Technique Latches for High-Resolution Prescaling Technique Counters EB 47 INSTRUMENTATION m e e n n c / By: JOe Ròy,‘ IndùstnâfVLogic Applications Event Counter and Storage Latches for High-Frequency, High-Resolution Counters
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EB47/D
MC1696--
MCI696,
motorola application note mc14534
14584b
MC14534
MC14518
eb47
mc1696
MCI4518
MC14508
mc14583b
mecl data
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NIPPON SMG
Abstract: 5216805 gt77
Text: HM5216405 Series Preliminary 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI All Inputs and outputs are referred to the rising edge of the clock input. The HM5216405 is offered In 2 banks for improved performance. Features R b v . 0.1 Apr. 5 ,1 9 9 5
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HM5216405
152-word
HM5216405TT-10
HM5216405TT-12
HM521640STT-15
400-mll
44-pln
TTP-44DE)
Hz/83
NIPPON SMG
5216805
gt77
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PDF
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SN74ACT3631
Abstract: SN74ACT3641 SN74ACT3651 1A32J
Text: SN74ACT3651 2048 x 36 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCAS439 - JUNE 1994 Output-Ready OR and Almost-Empty <AE) Flags Synchronized by CLKB Low-Power 0.8-Micron Advanced CMOS Technology Supports Clock Frequencies up to 67 MHz Fast Access Times of 11 ns
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SN74ACT3651
SCAS439
SN74ACT3631
SN74ACT3641
120-Pin
132-Pin
SN74ACT3651
1A32J
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Untitled
Abstract: No abstract text available
Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TTL) : 110 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5% Power Supply
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KM68B261A
32Kx8
100MHz)
KM68B261AJ
SOJ-300
KM68B261A
144-bit
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Untitled
Abstract: No abstract text available
Text: M D K l W N N 5 1 V 4400 B s e rie s Fast Page Mode CMOS 1Mx4bit Dynamic RAM DESCRIPTION The N N 51V4400B series is a high perform ance CMOS Dynam ic Random A ccess M em ory organized as 1,048,576 words by 4 bit. The N N 51V4400B series is fabricated with advanced C M OS technology and designed with innovative de
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51V4400B
NN51V4400B
NN51V4400BL
V4400BXX
128ms
G13G4
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PDF
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V53C104
Abstract: l04b 256KX4 V53C104B tnr dip mil std v53c104b80
Text: JVH VITEUC V53C104B HIGH PERFORMANCE, LO W POW ER 256K X 4 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 6 0 /6 0 L 7 0 /7 0 L 8 0 /80L Max. RAS Access Time, t p ^ 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cyde Time, (tp^)
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V53C104B
60/60L
70/70L
80/80L
V53C104BL
V53C104B-80
V53C104B-1
V53C104
l04b
256KX4
tnr dip mil std
v53c104b80
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Untitled
Abstract: No abstract text available
Text: MOSEL V IT E U C V53C16256H 2 5 6 K X 16 CMOS DYNAMIC RAM WITH SELF REFRESH PRELIMINARY HIGH PERFORMANCE 45 SO 55 60 Max. RAS Access Time, tRAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, (tcAA> 22 ns 25 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC)
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V53C16256H
V53C16256H
53C16256H
b3533Tl
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MN6126A
Abstract: MN6126 T74G N15K
Text: PANASONIC IN D L / E L E K -CIO 7S 69328.52 P A N A S O N I C D E jb ^ E flS S □0GL,73C] □ INDLtELECTRONIC 72C 0 6 7 3 9 D MN6126, MN6126A . M N 6 1 2 6 , M N 6 1 2 6 A h— • Wl Tone Squelch fo r Com munication C ontrol H M N6126. ■ MN6126A l i . ± l c ^ - f
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MN6126,
MN6126A
MN6126A
N6126.
MN6126
MN6126
T74G
N15K
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PDF
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NEC uPD
Abstract: 4264405 D42S65405
Text: DATA SHEET NEC / _/ MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿/PD4264405, 42S65405, 4265405 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs w ith optional EDO. EDO is a kind of the page m ode and is useful fo r the read operation.
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uPD4264405
uPD42S65405
uPD4265405
/PD4264405,
42S65405,
42S65405
32-pin
JPD4264405-A50
PD42S65405-A50,
NEC uPD
4264405
D42S65405
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PDF
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Untitled
Abstract: No abstract text available
Text: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE
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MT48LC16M4A1
MT48LC8M8A1/A2
MT48LC4M16A1/A2
096-cycle,
54-PIN
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PDF
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ks531
Abstract: TC9318FA
Text: TOSHIBA TC9318FA/FB TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9318FA, TC9318FB SINGLE CHIP DTS MICROCONTROLLER D TS -21 The TC9318FA and TC9318FB are a 4bit CMOS microcontroller for signal chip digital tuning systems. It is capable of functioning at a low voltage of 3V and
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TC9318FA/FB
TC9318FA,
TC9318FB
TC9318FA
TC9318FB
230MHz,
65-mm-pitch
LQFP64-P-1010-0
25TYP
ks531
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PDF
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85C330
Abstract: 85C320 t23h SiS 386
Text: SIS 85C 330 _ Data Buffer Rev 1.1 Prelim inary FEATURES • Provides 32 Bits Data Buffer between CPU and 386 A T System • Provides 128 Bytes Internal Cache Memory • Bus Conversion and Swap Logic for 32 Bits, 16 Bits and 8 Bits Transfers in CPU and DMA
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85C330
100-Pin
85C330
128-byte
-T27-
-T28-
85C320
t23h
SiS 386
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55V1326AFF-66 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1326AFF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM
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TC55V1326AFF-66
768-WORD
32-BIT
TC55V1326AFF
576-bit
LQFP100-P-1420-0
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PDF
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6265 SRAM
Abstract: No abstract text available
Text: MOSEL- VITELIC MS6265 8K x 8 SLOW SPEED CMOS STA TIC RAM ULTRA LOW DATA RETENTION CURRENT Features Description • Available in 100 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: MS6265 - 220mW (Max.) Operating - 5.5|iW (Max.) Power Down
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MS6265
220mW
MS6265LL
500mV
MS6265-10NC
MS6265-10FC
MS6265-10PC
MS6265-10PI
6265 SRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: blE D • mSbSQB 002318b 721 ■ HIT2 HM514270/L Series Preliminary 262,144-word x 16-bit Dynamic Random Access Memory H IT A C H I/ The Hitachi HM514270 are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM514270 have realized higher density, higher performance
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QG231flt>
HM514270/L
144-word
16-blt
HM514270
16-bit.
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PDF
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Untitled
Abstract: No abstract text available
Text: Vertical Receptacles 2.00 mm .079" FCI basics Various housing heights to meet your specific design requirements: 2.10 mm, 2.30 mm, 3.00 mm, 4.00 mm, 4.50 mm Dual-beam contact design for highly reliable electrical performance High temperature plastic Selective plating
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1-888-499-4FCI
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PDF
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