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    TA 100W Search Results

    TA 100W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-100P Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0035-100 Rochester Electronics CLF1G0035-100 - 100W Broadband RF power GaN HEMT Visit Rochester Electronics Buy
    CLF1G0035-100H Rochester Electronics CLF1G0035-100 - 100W Broadband RF power GaN HEMT (Custom) Visit Rochester Electronics Buy
    CLF1G0035-100R Rochester Electronics CLF1G0035-100 - 100W Broadband RF power GaN HEMT (Custom) Visit Rochester Electronics Buy
    TM-100 Rochester Electronics LLC TM-100/CLF1G0035S-100 - 100W Broadband RF Power RF Mosfet Gan HEMT Visit Rochester Electronics LLC Buy

    TA 100W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STK4141

    Abstract: STK4201II STK4231 transformer 100w STK4231V 100W 50hz power amplifier
    Text: Ordering number: EN 4590B Thick Film Hybrid IC STK4231V AF Power Amplifier Split Power Supply (100W+100W min, THD = 0.08%) Features Package Dimensions • Muting circuit built-in to isolate all types of shock noise • Current mirror circuit for low 0.08% total harmonic distortion


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    4590B STK4231V STK4201II STK4141X STK4231V] STK4141 STK4231 transformer 100w STK4231V 100W 50hz power amplifier PDF

    4590B

    Abstract: STK4231V STK4141X Transformer MG-200 STK4231 STK4201II transformer 100w MG-200 4590-2 STK4141
    Text: Ordering number: EN 4590B Thick Film Hybrid IC STK4231V AF Power Amplifier Split Power Supply (100W+100W min, THD = 0.08%) Features Package Dimensions • Muting circuit built-in to isolate all types of shock noise • Current mirror circuit for low 0.08% total harmonic distortion


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    4590B STK4231V STK4201II STK4141X STK4231V] 4590B STK4231V Transformer MG-200 STK4231 transformer 100w MG-200 4590-2 STK4141 PDF

    Untitled

    Abstract: No abstract text available
    Text: PT4474—24V 100Watt 5V 20 Amp Programmable Isolated DC-DC Converter SLTS106 Revised 10/31/2000 Patent pending on package assembly Features Description • Input Range: 18V to 36V • Programmable Output: 4.2V to 5.7V • Temp Range: -40° to +100°C • 1500 VDC Isolation


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    PT4474--24V 100Watt SLTS106 PT4494 PT4474 PDF

    PT4494 CURRENT BOOSTER

    Abstract: 500LFM PT4474 PT4494 TR-332
    Text: PT4474—24V 100Watt 5V 20 Amp Programmable Isolated DC-DC Converter SLTS106A Revised 2/21/2001 Patent pending on package assembly Features Description • Input Range: 18V to 36V • Programmable Output: 4.6V to 5.7V • Temp Range: -40° to +100°C • 1500 VDC Isolation


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    PT4474--24V 100Watt SLTS106A PT4494 PT4474 PT4494 CURRENT BOOSTER 500LFM PT4494 TR-332 PDF

    12v 100w amplifier

    Abstract: 12v to Amplifier 100w 100w 12v POWER AMPLIFIER 2SA877 SILICON PNP POWER TRANSISTOR
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA877 DESCRIPTION •High Power Dissipation: PC= 100W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for power amplifier and general purpose


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    2SA877 -50mA 12v 100w amplifier 12v to Amplifier 100w 100w 12v POWER AMPLIFIER 2SA877 SILICON PNP POWER TRANSISTOR PDF

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear


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    NES1823P-100 NES1823P-100 IMT-2000 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 615t 2C156 PDF

    2SA1987 2SC5359

    Abstract: 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
    Text: JMnic Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage


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    2SA1987 2SC5359 -230V; 2SA1987 2SC5359 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359 PDF

    2SD2155

    Abstract: 2SB1429
    Text: SavantIC Semiconductor Product Specification 2SD2155 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1429 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage


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    2SD2155 2SB1429 2SD2155 2SB1429 PDF

    DDX-2060

    Abstract: DDX2060 car class d audio 50W DDX-8000 ddx-4100a DDX-4100 100w Mono CLASS D amplifier diagram 2060 data sheet DDX-2000 100 100w stereo amplifier
    Text: DDX-2060 All-Digital High Efficiency Power Amplifier FEATURES • HIGH OUTPUT CAPABILITY • 2 x 35W into 8Ω or 1 x 70W into 4Ω @ <1% THD • 2 x 50W into 8Ω or 1 x 100W into 4Ω @ 10% THD • SINGLE SUPPLY +9V to +30V • COMPACT SURFACE MOUNT PACKAGE


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    DDX-2060 DDX-2060 Rev09 DDX2060 car class d audio 50W DDX-8000 ddx-4100a DDX-4100 100w Mono CLASS D amplifier diagram 2060 data sheet DDX-2000 100 100w stereo amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 4:1 & 5:1 Wide Input Single Output Metallic Case - 1 500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950


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    MGDI-100 FC06-054 PDF

    Untitled

    Abstract: No abstract text available
    Text: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 5:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950


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    MGDI-100 FC06-054 PDF

    Untitled

    Abstract: No abstract text available
    Text: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 5:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start PREL IMIN ARY • Galvanic isolation 1.500 VDC according to EN 60950


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    MGDI-100 FC06-054 PDF

    100w audio amplifier

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Com plem entary to 2SD 2155 • Recom m end for 100W High Fidelity Audio Frequency - Amplifier O utput Stage Absolute Maximum Ratings (Ta = 25 C)


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    2SB1429 2SD2155 100w audio amplifier PDF

    tr 2sc5200

    Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
    Text: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


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    2SC5200 2SA1943 2-21F1A tr 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1943 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 2 0 .5 M A X • • 3.3 ±0 .2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC


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    2SA1943 2SC5200 --50mA, --800mA 2-21F1A PDF

    2SA1302

    Abstract: Toshiba 2Sa1302
    Text: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL


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    2SA1302 2SC3281 2-21F1A 2SA1302 Toshiba 2Sa1302 PDF

    2SB713

    Abstract: transistor npn 100w amplifier 2SD751
    Text: PANASONIC INDL/ELEK -CIO 15E D • t,=132852 0DlD4tl 1 Silicon Epitaxal Base Mesa Transistor 2SB713 PNP 2SD751 (NPN) TOP-3 Package (See Page 36 For Dimensions) 2SB713 (PNP) Absolute Maximum Ratings (Ta=25°C) Hem Collector-Base Voltage Collector-Emitter Voltage


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    2SB713 2SD751 2SB713 2SD751 transistor npn 100w amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS C u rre n t R ating: 3A AC,DC V oltage R ating: 300 V AC,DC T e m p e ra tu re Range: —2 5 ‘ C ~ + 8 5 ‘ C C o n ta c t R esistance: 20m Q Max In su la tio n R esistance: 100MQ Min W ith sta nd ing V oltage: 1000V A C /m in u te Pin M aterial: B r a s s /T in - p la te d


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    100MQ A21OOWVâ A2100WV-XPX PDF

    2sa1943 toshiba transistor

    Abstract: No abstract text available
    Text: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.


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    2SA1943 2SC5200 2-21F1A -230V 2sa1943 toshiba transistor PDF

    100w audio amplifier

    Abstract: 2SC1343 2SA753
    Text: AOK AOK Semiconductor Product Specification 2SA753 S ilicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC1343 APPLICATIONS • For 100W audio amplifier power output applications PINNING see Fig.2


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    2SA753 2SC1343 220WKX 13MAX- 100w audio amplifier PDF

    STK4231II

    Abstract: STK4231 for power supply STK4231 stk4231 ll STK4231 II tagl2 8Q transistor 100 100w stereo amplifier 8c 617 transistor DBA40C
    Text: Ordering number: EN 2307 Thick Film Hybrid IC No.2307 S T K 4 2 3 1 II 2-Channel 1Û0W min AF Power Amp Dual Supplies Features • The STK4201II series (STK4231II) and STK4201V series (high-grade type) are pin-compatible in the output range of 60W to 100W. Once the PCB pattern is designed, you can easily satisfy the require­


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    9018TA/TS STK4231II STK4201II STK4231II) STK4201V STK4231II STK4231 for power supply STK4231 stk4231 ll STK4231 II tagl2 8Q transistor 100 100w stereo amplifier 8c 617 transistor DBA40C PDF

    2SA1011

    Abstract: 2SC2344
    Text: AOK AOK Semiconductor Product Specification 2SA1011 Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2344 APPLICATIONS • High voltage switching , • Audio frequency power amplifier; • 100W output predriver applications


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    2SA1011 T0-220 2SC2344 O-220C) 300t001 PDF

    2SA1302 transistor

    Abstract: No abstract text available
    Text: i TOSHIBA TRANSISTOR n ft SILICON PNP EPITAXIAL TYPE PCT PROCESS ZSA130Z POWER AMPLIFIER APPLICATIONS. Unit in m m 20.5 M A X . FEATURES: 0 3 l3 ± O l2 T . Co mplementary to 2SC3281 . Recommmend for 100W High Fiderity Audio Frequency Amplifier Output Stage.


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    ZSA130Z 2SC3281 Ta-25 2SA1302 2SA1302 transistor PDF

    251C

    Abstract: 2SA1535 2SA1535A
    Text: AOK AOK Semiconductor P ro d u c t S p e c ific a tio n 2SA1535 2SA1535A S ilic o n PNP P ow er T ra n s is to rs DESCRIPTION • With T0220Fa package • Complement to type 2SC3944/3944A • Optimum for the driver-stage of a 60W to 100Woutput amplifier APPLICATIONS


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    2SA1535 2SA1535A T0220Fa 2SC3944/3944A 100Woutput 220Fa> 2sa1535a 251C PDF