T718N
Abstract: T1189N T1509N T1989N T358N T508N T588N T879N
Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung [°C] [A] [W] 25 302 431 482 609 943 1225 1406 1791 2025 2910 290 413 462 583
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TA 2025 B
Abstract: bv 2025 BV EI 302 2025
Text: phone: 49 6402 808-0 HAHN - Elektrobau GmbH telefax: 49 (6402) 808-60 Bellersheimer Strasse 45 e-mail: info@hahn-trafo.de D - 35410 Hungen data sheet: BV EI 302 2025 size 2 a: height 21.8 mm 1.5 VA ta 70/F
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com/english/daten/3022025
TA 2025 B
bv 2025
BV EI 302 2025
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bt 2025
Abstract: transistor bc 541 2SK334 TRANSISTOR IFW transistor Bc 542 60N11
Text: S ANYO SEMICONDUCTOR CORP 3SE D 7^707^ 00CHEE1 1 . T-29-25 —— N-Channel Junction Silicon FET 2025 Capacitor Microphone Applications • 933C FEA TU RE •Because it has an ultra-compact outline, sets can be made compact. A BS O L U T E M AXIM U M RATINGS/Ta = 25° C
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T-29-25
T-91-20
SC-43
bt 2025
transistor bc 541
2SK334
TRANSISTOR IFW
transistor Bc 542
60N11
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190mAh
Abstract: No abstract text available
Text: 0Em EEMB BATTERY Lithium Polymer Battery B rie fD a ta s he e t 1 BASIC SPECIFICATION LP 50 2025 1 Bat tery Type 2 Nomi nal C apaci ty 3 Nomi nal Vol tage 3 . 7V 0. 2C d i sc ha r ge 4 Char gi ng Vol tage 4.2V±0.05V S tandar d Char ge Method: C C / C V ( con s t an t c ur r en t/ c o ns ta n t vol t age)
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190mAh
180mAh
180mA
180mA
Cto45Â
500cycles
190mAh
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TT 2206
Abstract: cvr 440 2SK595
Text: 2SK595 2025 N9- Y * \ ,a * B c,») - - M t t t * * J l t %’ •FBET7ot^ «S. Assolute Ha» 1nun k A tin ça A * - - 5 #C un 1 1 •20 10 1 100 12S -55-025 r - k - r u o W£ V c o o r- > m t 1G ru !0 Po Tj TtlB s a n a ta * E l e c t x i c a l C h *X A ct- ri*tic*/T »- 2 S #C
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2SK595
2SK595U
VCC14
23s24
3097JN
TT 2206
cvr 440
2SK595
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MSM5052-02
Abstract: thermistor 7 rom clinical Thermometer ki 10938
Text: O K I Semiconductor MSM5052-02 Clinical Thermometer with Clock Function GENERAL D ESC R IPTIO N The MSM5052-02 is an IC, equipped with both clinical thermometer and clock functions. This device uses a thermistor as its sensing element and displays temperatures in the range of 32 °
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MSM5052-02
MSM5052-02
17-bit
thermistor 7 rom
clinical Thermometer
ki 10938
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5052-02 Clinical Thermometer with Clock Function GENERAL DESCRIPTION The M SM 5052-02 is an IC, equipped w ith both clinical therm om eter and clock functions. This device uses a therm istor as its sensing elem ent and displays tem peratures in the range of 32 °
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MSM5052-02
b724240
80-PIN
FP80-P-1420-K
FP84-P-1420-BK
b72424D
001flm2
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thermistor 103
Abstract: t3d2d Ishizuka Electronics 103AT thermistors 103AT 11 40 pin configuration LCD 3.5-DIGIT thermistors 103AT IN 5339
Text: O K I Semiconductor MSM5052-10 Thermometer with Clock and Alarm Function GENERAL DESCRIPTION The MSM5052-10 is a 4-bit low-power microcontroller, manufactured using CMOS process technology, and is equipped with a digital thermometer, an alarm with a snooze function, and
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MSM5052-10
MSM5052-10
103-AT
thermistor 103
t3d2d
Ishizuka Electronics 103AT
thermistors 103AT 11
40 pin configuration LCD 3.5-DIGIT
thermistors 103AT
IN 5339
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clinical Thermometer
Abstract: Thermometer clock LCD ic xl 1507 MSM5052-02 lcd N7 Linear Thermometer ic 3.5-DIGIT lcd IC 2025 Thermometer ic oki c301
Text: O K I Semiconductor MSM5052-02 Clinical Thermometer with Clock Function GENERAL DESCRIPTION The M SM 5052-02 is an IC, equipped w ith both clinical therm om eter and clock functions. This device uses a therm istor as its sensing elem ent and displays tem peratures in the range of 32 °
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MSM5052-02
MSM5052-02
80-PIN
QFP80-P-1420-K
QFP84-P-1420-BK
clinical Thermometer
Thermometer clock LCD ic
xl 1507
lcd N7
Linear Thermometer ic
3.5-DIGIT lcd
IC 2025
Thermometer ic
oki c301
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M S M 5 5 2 - 1 Thermometer with Clock and Alarm Function GENERAL DESCRIPTION T he MSM5052-10 is a 4-bit lo w -p o w e r m icrocontroller, m a n u fa ctu re d u sin g CM OS p rocess technology, a n d is eq u ip p e d w ith a d ig ital th erm o m eter, a n ala rm w ith a sn o o ze fu n ctio n , an d
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MSM5052-10
b724240
80-PIN
QFP80-P-1420-K
QFP84-P-1420-BK
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thermistor 103
Abstract: thermistor 10k 25 3435 MSM5052-10 3.5-DIGIT lcd IC 2025 Thermometer clock LCD ic Digital alarm clock ic with 28 pin 158T MSM5052-10GS-BK MSM5052-10GS-K
Text: O K I Semiconductor M S M 5 5 2 - 1 Thermometer with Clock and Alarm Function GENERAL DESCRIPTION T he MSM5052-10 is a 4-bit lo w -p o w e r m icrocontroller, m a n u fa ctu re d u sin g CM OS p rocess technology, a n d is eq u ip p e d w ith a d ig ital th erm o m eter, a n ala rm w ith a sn o o ze fu n ctio n , an d
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MSM5052-10
MSM5052-10
80-PIN
QFP80-P-1420-K
QFP84-P-1420-BK
thermistor 103
thermistor 10k 25 3435
3.5-DIGIT lcd
IC 2025
Thermometer clock LCD ic
Digital alarm clock ic with 28 pin
158T
MSM5052-10GS-BK
MSM5052-10GS-K
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IC 2025
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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smd diode af3
Abstract: SMD IC 2025 DIODE BAT 85 SMD PACKAGE PLCC28R IC 2025 PEB2025 PEB2025-N PEB2025-P PL-CC-28-R 2025N
Text: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. ATTENTION ISDN Exchange Power Controller IEPC PEB 2025 CMOS IC Features ● Supplies power to up to four transmission lines
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P-LCC-28-R
P-DIP-22
smd diode af3
SMD IC 2025
DIODE BAT 85 SMD PACKAGE
PLCC28R
IC 2025
PEB2025
PEB2025-N
PEB2025-P
PL-CC-28-R
2025N
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AN1955
Abstract: MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA
Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 1, 8/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to
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MRF7P20040H
MRF7P20040HR3
MRF7P20040HSR3
MRF7P20040HR3
AN1955
MRF7P20040H
J1311
A114
A115
JESD22
ATC600F2R4AT250XT
j182 semiconductor
J1240
CRCW12061000FKEA
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C5750X7S2A106KT
Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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AFT20P140--4WN
AFT20P140-4WNR3
AFT20P140--4WN
C5750X7S2A106KT
AFT20P140-4WNR3
aft20p140-4wn
aft20p140
TRANSISTOR GF 507
MXc 501
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CW12010T0050GBK
Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550
Text: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20160H
MRF8P20160HSR3
CW12010T0050GBK
CW12010T0050G
J965
ATC600F1R1BT250XT
Transistor J550
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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AFT20P140--4WN
AFT20P140-4WNR3
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CW12010T0050GBK
Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to
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MRF8P2160H
MRF8P20160HR3
MRF8P20160HSR3
MRF8P20160HR3
CW12010T0050GBK
J965
J546
mrf8p
GCS351-HYB1900
ATC600F1R1BT250XT
MRF8P2160H
ATC600F0R3BT250XT
ATC600F2R4BT250XT
CRCW12068R25FKEA
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to
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MRF8P2160H
MRF8P20160HR3
MRF8P20160HSR3
MRF8P20160HR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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AFT20P140--4WN
1880-2025dated
AFT20P140-4WNR3
AFT20P140-4WGNR3
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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AFT20P140--4WN
AFT20P140-4WNR3
AFT20P140-4WGNR3
1/2014Semiconductor,
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PE4462
Abstract: PE4462-48MLP7X7-4000C PE4462-48MLP7X7-52A
Text: ADVANCE INFORMATION PE4462 High Isolation, Non-Blocking 4x6 RF Matrix Switch Product Description The PE4462 is a high-performance monolithic CMOS switch matrix with integrated power splitters for nonblocking operation. Any of the four RF inputs can be connected to one or more of the six RF outputs
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PE4462
PE4462
PE4462-48MLP7X7-4000C
PE4462-48MLP7X7-52A
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PE4462
Abstract: PE4462-48MLP7X7-4000C PE4462-48MLP7X7-52A
Text: ADVANCE INFORMATION PE4462 High Isolation, Non-Blocking 4x6 RF Matrix Switch Product Description The PE4462 is a high-performance monolithic CMOS switch matrix with integrated power splitters for nonblocking operation. Any of the four RF inputs can be connected to one or more of the six RF outputs
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PE4462
PE4462
PE4462-48MLP7X7-4000C
PE4462-48MLP7X7-52A
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to
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MRF7P20040H
MRF7P20040HR3
MRF7P20040HSR3
10yees,
MRF7P20040HR3
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