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    TA 7250 Search Results

    TA 7250 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    72V7250L10BBG Renesas Electronics Corporation 3.3V 2K X 72 SUPERSYNCII Visit Renesas Electronics Corporation
    72V7250L10BBG8 Renesas Electronics Corporation 3.3V 2K X 72 SUPERSYNCII Visit Renesas Electronics Corporation
    72V7250L15BBGI Renesas Electronics Corporation 3.3V 2K X 72 SUPERSYNCII Visit Renesas Electronics Corporation
    72V7250L15BBGI8 Renesas Electronics Corporation 3.3V 2K X 72 SUPERSYNCII Visit Renesas Electronics Corporation
    72V7250L15BB8 Renesas Electronics Corporation 3.3V 2K X 72 SUPERSYNCII Visit Renesas Electronics Corporation
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    TA 7250 Price and Stock

    Wima SMDTF02470TA00JQ00

    Film Capacitors 250V .047uF 5% MAX REFLOW 230C
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    Mouser Electronics SMDTF02470TA00JQ00
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    Nidec Corporation SA-7250TA

    Coded Rotary Switches smd 7mm code hex real, top adj., J-hook, cross slot
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    Mouser Electronics SA-7250TA
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    EDAC Inc 629-24W7250-4TA

    D-Sub Mixed Contact Connectors Right-angle Power Combo D-Sub Connector
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    Mouser Electronics 629-24W7250-4TA
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    EDAC Inc 629-24W7250-3TA

    D-Sub Mixed Contact Connectors Right-angle Power Combo D-Sub Connector
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    Mouser Electronics 629-24W7250-3TA
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    EDAC Inc 630-24W7250-1TA

    D-Sub Mixed Contact Connectors Right-angle Power Combo D-Sub Connector
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    Mouser Electronics 630-24W7250-1TA
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    TA 7250 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TA7250AP Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TA7250AP Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TA7250BP Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TA7250BP Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TA7250BP Unknown Industrial Linear IC Data Book Scan PDF
    TA7250BP Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TA7250BP Unknown Single-Channel Audio Power-Output Amplifier Scan PDF
    TA7250BP Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TA7250BP Toshiba (TA7251BP) 30W BTL AUDIO POWER AMPLIFIER Scan PDF
    TA7250BP Toshiba 30W BTL AUDIO POWER AMPLIFIER Scan PDF
    TA7250P Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TA7250P Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TA7250P Toshiba Scan PDF

    TA 7250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ616

    Abstract: No abstract text available
    Text: 2SJ616 Ordering number : EN7270B P-Channel Silicon MOSFET 2SJ616 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


    Original     		PDF 2SJ616 EN7270B PW10s, 250mm20 2SJ616

    2SJ628

    Abstract: No abstract text available
    Text: 2SJ628 Ordering number : EN7271A P-Channel Silicon MOSFET 2SJ628 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


    Original     		PDF 2SJ628 EN7271A PW10s, 250mm20 2SJ628

    0705V

    Abstract: SMO0705V
    Text: SMO 0705V Hybrid MIC Module Use TENTATIVE • Data communications VCO Voltage Controlled Oscillator module. Absolute Maximum Ratings/Ta=25°C Parameter Conditions Symbol Ratings unit 6 V Operating Current Voltage VD Control Voltage VC 15 V Operating Temperature


    Original     		PDF 980213TM2fXHD 0705V SMO0705V

    j652

    Abstract: No abstract text available
    Text: Ordering number : EN7625A 2SJ652 P-Channel Power MOSFET http://onsemi.com –60V, –28A, 38mΩ, TO-220F-3SG Features • • • ON-resistance RDS on 1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF EN7625A 2SJ652 O-220F-3SG 4360pF PW10s, --30V, --28A L500H, j652

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN7681B 2SK3703 N-Channel Power MOSFET 60V, 30A, 26mΩ, TO-220F-3SG http://onsemi.com Features • • ON-resistance RDS on 1=20mΩ (typ.) 4V drive • Input capacitance Ciss=1780pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF EN7681B 2SK3703 O-220F-3SG 1780pF PW10s, L200H,

    trumeter 7250

    Abstract: trumeter M261NX 4 pin din DIN CONNECTION adaptor AC to DC ScansUX67
    Text: 5-240V Adaptor Module 7250 DIN SPECIFICATION: Timing Inputs: 5 to 48V AC /D C and 48 to 240V AC/DC 50mS m in pulse length. Input Impedance: 5 to 48V input: 10Kohm 48 to 240V input: 58.5K ohm Reset input: C ontact closure only via external volt free co nta ct. 15mS (m in) co n ta ct ON time.


    OCR Scan     		PDF 10Kohm 8-240V M261NX, trumeter 7250 trumeter M261NX 4 pin din DIN CONNECTION adaptor AC to DC ScansUX67

    Teradyne connector 72 pin

    Abstract: No abstract text available
    Text: H D M /H U M 2 mm Backplane Interconnection System ^ H ig h -d e n s ity 2 m m c o n t a c t sp a c in g : 2 0 c o n ta c ts p er lin e a r c m * S ta n d a r d a n d s h ie ld e d d a u g h te r b o a r d c o n n e c t o r o p t io n s v M o d u la r c o m p o n e n t s for


    OCR Scan     		PDF -1217-Cbackplane 0896-BHP-5000 Teradyne connector 72 pin

    AD2033

    Abstract: No abstract text available
    Text: PHOTO RELAY TLP795G TLP795G TELECOMM UNICATION D A TA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP795G consists of a n a lum inum gallium arsenide infrared em ittin g diode optically coupled to a photo-MOS FE T in a six lead plastic DIP package.


    OCR Scan     		PDF TLP795G TLP795G) TLP795G 150mA 5000Vrm AD2033

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs Chip Form Features • High power - P1dB = 31.5 dBm at f= 15 GHz • High gain - G idB = 6.5 dB a tf = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8855 15GHz 002221b

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT «-FA ST-O N -TA B ♦100 High Power Switching Applications Motor Control Applications F e a tu re s • High input im pedance • High speed: tf = 1 .0|is Max.


    OCR Scan     		PDF MG25Q2YS91 PW038Â

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT 4-FA ST-O N -TA B * 100 High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 1 .Ops Max. • Lo w saturation:


    OCR Scan     		PDF MG50Q2YS91 PW03840796

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P 1dB = 24 dBm at f = 8 GHz • High gain - G-,dB = 8 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8835 D02S177 JS8911-AS

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8851

    TLP595A

    Abstract: TLP595 E67349 11-9A1
    Text: PHOTO RELAY TLP595A T L P 5 9 5 A TELECOMM UNICATION D A TA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595A consists of an alum inum gallium arsenide infrared e m itting diode optically coupled to a photo-MOS FET in a six lead plastic D IP package.


    OCR Scan     		PDF TLP595A TLP595A) TLP595A 300mA 2500Vrms UL1577, E67349 TLP595 E67349 11-9A1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8836A Power GaAs FETs Chip Form Features •H ig h power - Pld B = 29.5 dBm at f = 8 GHz • High gain - G-|dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8836A S8836A 0D221fl3

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P-idB = 33.5 dBm at f = 8 GHz • High gain - G 1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8838A S8838A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8837A Power GaAs FETs Chip Form Features • High power - Pi(jB = 32 dBm at f = 8 GHz • High gain - G-|dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8837A S8837A

    TPM1617

    Abstract: TPM1617-8
    Text: High Power GaAs FET L, S-Band TPM1617-8 FEATURES: • HIGH POWER P ld B = 39.5 dBm at 1.6 GHz to 1 .7GHz ■ PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 13 dB at 1.6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS (Ta = 25°C)


    OCR Scan     		PDF TPM1617-8 TPM1617 TPM1617-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8853 Power GaAs FETs Chip Form Features • High power - P idB = 28 dBm at f= 15 GHz • High gain - GidB = 7 dB at f = 15 GHz • Suitable for Ku-Bar\d amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8853 15GHz S8853

    TPM1617-16

    Abstract: TPM1617
    Text: TPM1617-16 FEATURES: • HIGH POWER PldB = 42.5 dBm at 1.6 GHz to 1 .7 GHz > PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 1 3 d B at 1,6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS Output Power at 1 dB Com­


    OCR Scan     		PDF -TPM1617-16 13dBat RCH725G QD2ET75 TPM1617-16 TPM1617

    JS8836A-AS

    Abstract: No abstract text available
    Text: JS8836A-AS FEATURES: • HIGH POWER PldB = 29.5 dBm at f = 8 GHz ■ SUITABLE FOR C-BAND AMPLIFIER IOIM IMPLANTATION HIGH GAIN G1dB = 7 5 dB at f = 8 GHz ■ CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° CÌ TYPE NUMBER JS8836A -A S (CHIP CHARACTERISTIC SYMBOL


    OCR Scan     		PDF JS8836A-AS Sat20 CH72S0 JS8836A-AS TDCI72SG 0D22c

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET JS8894-AS Power GaAs FETs Chip Form Features • High power - P1(jB = 27.0 dBm at f = 23 GHz • High gain - G1dB = 6.0 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF JS8894-AS 23GHz MW10170196 JS8894-AS

    A1203

    Abstract: JS8851-AS MW1011
    Text: TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs Chip Form Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF JS8851-AS 24dBmatf 15GHz 18GHz 15GHz A1203 JS8851-AS MW1011

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET JS8837A-AS Power GaAs FETs Chip Form Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G1dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF JS8837A-AS Type17 JS8837A-AS MW10080196