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    TA 8754 Search Results

    TA 8754 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    87543-4111LF Amphenol Communications Solutions Modular Jack, Input Output Connectors, Cat 3 Single, Vertical, Surface Mount, 4 Positions, 1 Port Visit Amphenol Communications Solutions
    87543-4111CLF Amphenol Communications Solutions Modular Jack, Input Output Connectors, Cat 3 Single, Vertical, Surface Mount, 4 Positions, 1 Port, with Mylar Visit Amphenol Communications Solutions
    87543-1114LF Amphenol Communications Solutions Modular Jack, CAT 3, Standard, 4P4C, Vertical, Surface Mount, without Shield, 1 Port. Visit Amphenol Communications Solutions
    87545-4114LF Amphenol Communications Solutions Modular Jack, CAT 3, Standard, 6P6C, Vertical, Surface Mount, without Shield, 1 Port. Visit Amphenol Communications Solutions
    87543-4114LF Amphenol Communications Solutions Modular Jack, CAT 3, Standard, 4P4C, Vertical, Surface Mount, without Shield, 1 Port. Visit Amphenol Communications Solutions

    TA 8754 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    thermal fuse 115

    Abstract: No abstract text available
    Text: Data Sheet • Electronic 1-phase Switch-mode power supplies c o n n e c t P o w e r I N S TA P O W E R CP SNT 24 W CP SNT 25 W CP SNT 48 W NEW Power supplies for DIN-rail mounting • Output voltage adjustable via potentiometer • Wide-range input: 85…264 VAC /


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    25/48W) 1/07-LIT0701 thermal fuse 115 PDF

    87541

    Abstract: 2SJ190 2062a ITR00029 ITR00030 ITR00032 ITR00033 ITR01031
    Text: 注文コード No.N 3 7 6 3 2SJ190 No. 3 7 6 3 51899 新 2SJ190 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    2SJ190 250mm2 500mA 500mA, ITR00036 ITR00035 --30V --10V 87541 2SJ190 2062a ITR00029 ITR00030 ITR00032 ITR00033 ITR01031 PDF

    2SJ193

    Abstract: 2062a ITR00057 ITR00058 ITR00059 ITR00060 ITR00061 ITR00062 37662
    Text: 注文コード No.N 3 7 6 6 2SJ193 No. 3 7 6 6 51899 2SJ193 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    2SJ193 250mm2 500mA 500mA, ITR00064 ITR00063 --50V --10V 2SJ193 2062a ITR00057 ITR00058 ITR00059 ITR00060 ITR00061 ITR00062 37662 PDF

    54AC00

    Abstract: 54ACT00 AC00
    Text: 54AC00 54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Outputs source/sink 24 mA n ’ACT00 has TTL-compatible inputs n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699


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    54AC00 54ACT00 ACT00 ACT00: DS100257-3 DS100257-1 DS100257-2 DS100257 54AC00 54ACT00 AC00 PDF

    54AC00

    Abstract: 54ACT00 AC00 act00
    Text: 54AC00 54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Outputs source/sink 24 mA n ’ACT00 has TTL-compatible inputs n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699


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    54AC00 54ACT00 ACT00 ACT00: DS100257-3 DS100257-1 DS100257-2 DS100257 54AC00 54ACT00 AC00 PDF

    54ACT00

    Abstract: 54AC00 54ACT 74AC AC00
    Text: 54AC00/54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699 n 54AC00 now qualified to 300Krad RHA designation,


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    54AC00/54ACT00 ACT00 ACT00: 54AC00 300Krad DS100257 54ACT00 54ACT 74AC AC00 PDF

    2092A

    Abstract: 2SJ195
    Text: Ordering number: EN3768A _ 2SJ195 N0.3768A P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage


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    EN3768A 2SJ195 -100V 2092A PDF

    EN3767

    Abstract: 2SJ194
    Text: Ordering number:EN37 67 _ 2SJ194 No.3767 P-Channel MOS Silicon FET Very High-Speed Switching Applications Featu res •Low ON resistance. •Very high-speed switching. •Low-voltage drive. i solute Maximum R atings at Ta —25°C Drain to Source Voltage


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    EN3767 2SJ194 100juA -100V EN3767 PDF

    2SJ191

    Abstract: No abstract text available
    Text: 2SJ191 2083A LD L o w D rive Series V Dss = 6 0 V 2092A P Channel Power MOSFET 3764A Features • Low ON resistance •Very high-speed switching • Low-voltage drive Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


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    2SJ191 10/js, 2SJ191 PDF

    2092A

    Abstract: No abstract text available
    Text: 2SJ192 2083A LD L o w D rive S eries V Dss=60V 2092A P Channel Power M OSFET Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


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    2SJ192 41293TH 2092A PDF

    3773A

    Abstract: 2SK1472
    Text: Ordering number: E N 3 7 7 3 A 2SK1472 N0.3773A N-Channel MOS Silicon FET Very High-Speed Switching Applications i F eatu res - Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b solu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage


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    EN3773A 2SK1472 100//A 3773A PDF

    2SK1471

    Abstract: No abstract text available
    Text: Ordering num ber: E N 3 77 2A _ 2SK1471 N0.3772A N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. b s o lu te M ax im u m R a tin g s a t Ta —25°C


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    EN3772A 2SK1471 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ194 _ 2 0 9 2 A_ ^ LD L o w D riv e S e rie s V d s s = 1 0 0 V P Channel Power M OSFET 13767 F eatures - Low ON resistance. •Very high-speed switching. • Low-voltage drive. isolute M axim um R atings at Ta = 25°C Drain to Source Voltage


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    2SJ194 41293TH PDF

    diode sy 710

    Abstract: sy 710 diode 2SJ192
    Text: 2SJ192 2083A 2092A LD L o w D riv e S e rie s V qSs = 6 0 V P Channel Power MOSFET 3765 Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage


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    2SJ192 diode sy 710 sy 710 diode 2SJ192 PDF

    bd7s

    Abstract: 2SK1471 2083A 0d13
    Text: 2SK1471 2083A LD L o w D rive S eries V Dss = 6 0 V 2092A N Channel Power MOSFET 3772A Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. b solute M axim um R atings at Ta = 25°C Drain to Source Voltage V DSS Gate to Source Voltage


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    2SK1471 10//S, bd7s 2SK1471 2083A 0d13 PDF

    mosfet 3767

    Abstract: 2SJ194 2092A
    Text: 2SJ194 2083A LD L o w D rive Series V Ds s = 1 0 0 V 2092A P Channel Power MOSFET 3767 Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute Maximum R atings at Ta = 25°C Drain to Source Voltage Vd ss Gate to Source Voltage


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    2SJ194 2083a 2092a mosfet 3767 2SJ194 2092A PDF

    37751

    Abstract: 2092A
    Text: 2SK1474 2083A LD L o w D riv e S e rie s 2092A V Ds s — 100V N Channel Power MOSFET .T 3 7 7 5 A F eatures • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A b solu te M axim um R atings at Ta = 25°C Drain to Source Voltage


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    2SK1474 90893TH 37751 2092A PDF

    2SJ195

    Abstract: No abstract text available
    Text: 2SJ195 2083a 2092 A LD L o w D rive S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


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    2SJ195 2083a 42693TH 2SJ195 PDF

    2SK1474

    Abstract: No abstract text available
    Text: Ordering number: EN3775A 2SK1474 N0.3775A N-Channel M O S Silicon F E T Very High-Speed Switching Applications F e a tu re s • Low O N resistance. •V ery high-speed switching. ■Low-voltage drive. A b so lu te M ax im u m R a tin g s at Ta = 25°C Drain to Source Voltage


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    EN3775A 2SK1474 10/iS, PDF

    2SK1474

    Abstract: 3775A M19-6
    Text: 2SK1474 LD Low Drive Series V Ds s = 1 0 0 V 2 Q83 A_ 2092 A N Channel Power MOSFET 3775A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. bso iu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage


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    2SK1474 2092A PWS10/ 100//A DD13Ti3 2SK1474 3775A M19-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ189 • ♦ 2083A 2092A LD L o w D riv e S e rie s V DSs= 3 0 V P Channel Power M OSFET 3762A F e a tu re s •Low ON resistance • Very high-speed switching • Low-voltage drive A b so lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage


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    2SJ189 --10V, 42893TH/N1292MH PDF

    d3s diode

    Abstract: DIODE d3s 2092A
    Text: 2SK1471 LD L o w D rive S eries V D3s = 6 0 V 2083 A2092A N Channel Power M OSFET E 3772A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage


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    2SK1471 A2092A 71993TH d3s diode DIODE d3s 2092A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ195 2083A 2092A LD L o w D rive Series VDs s = 1 0 0 V P Channel Power MOSFET 3768 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta=25°C Drain to Source Voltage V d ss Gate to Source Voltage


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    2SJ195 42693TH PDF

    2092A

    Abstract: No abstract text available
    Text: 20 83A LD L o w D rive S eries V Dss = 6 0 V 2092A P Channel Power M OSFET \E 3 7 6 4 A F e a tu re s •Low ON resistance ■Very high-speed switching • Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C D rain to Source Voltage V d ss Gate to Source Voltage


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    42893TH/N1292MH 2SJ191 2092A PDF