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    TAA 436 Search Results

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    Kyocera AVX Components 1004369PT-AA10L0100

    Antennas Mix-Polarized Tunabl e 5GHz PCB antenna
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1004369PT-AA10L0100 990
    • 1 $4.16
    • 10 $2.38
    • 100 $1.96
    • 1000 $1.53
    • 10000 $1.34
    Buy Now

    Kyocera AVX Components 1004369PT-AA10L0135

    Antennas Assembly WLANAPT 135
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1004369PT-AA10L0135
    • 1 -
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    • 100 -
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    TAA 436 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CY7C1061AV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061AV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ 990 mW (max)


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    PDF CY7C1061AV33 16-Mbit CY7C1061AV33

    R5C833

    Abstract: pinout dell battery BCM5880 schematic lcd inverter dell SLG8LP554VTR SLG8LP554 schematic diagram lcd monitor dell camera pinout JAL10 broadcom BCM5880
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : JAL10 PCB NO : LA4151P DAA00000Q1L BOM P/N : 1 M09 Lola UMA uFCBGA Mobile Penryn Intel Cantiga GM + ICH9M 2 2 2008-07-4 REV : 1.0 @ : Nopop Component 1@ : Use TCM only 2@ : Use TAA only 3@ : Use BROADCOM TPM only


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    PDF JAL10 LA4151P DAA00000Q1L) DAA00000Q1L LA-4151P PR170 LA-4151P R5C833 pinout dell battery BCM5880 schematic lcd inverter dell SLG8LP554VTR SLG8LP554 schematic diagram lcd monitor dell camera pinout broadcom BCM5880

    IBM0164165B4M

    Abstract: IBM0164165P4M TSOP-54
    Text: IBM0164165B4M x 1613/9, 3.3V, EDO. IBM0164165P4M x 1613/9, 3.3V, LP, SR, EDO. IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:


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    PDF IBM0164165B4M IBM0164165P4M IBM0164165B IBM0164165P 104ns 128ms TSOP-54

    V53C365805A

    Abstract: WL12
    Text: MOSEL VITELIC V53C365805A 3.3 VOLT 8M X 8 EDO PAGE MODE CMOS DYNAMIC RAM V53C365805A 40 50 60 Max. RAS Access Time, tRAC 40 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 25 ns 30 ns Min. EDO Page Mode Cycle Time, (tPC) 16 ns 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)


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    PDF V53C365805A cycles/64 32-pin V53C365805A WL12

    Untitled

    Abstract: No abstract text available
    Text: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480B IBM11E4480B 4M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm


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    PDF IBM11D4480BA4M EOS11/11, IBM11E4480BA4M IBM11D4480B IBM11E4480B 72-Pin 130ns

    Untitled

    Abstract: No abstract text available
    Text: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480B IBM11E4480B 4M x 36 ECC-on-SIMM Features • Single-error-correct SEC high-speed ECC algorithm • Single 5.0V ± 0.25V Power Supply • All inputs & outputs are fully TTL & CMOS


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    PDF IBM11D4480BA4M EOS11/11, IBM11E4480BA4M IBM11D4480B IBM11E4480B 72-Pin 130ns

    8m x 36

    Abstract: No abstract text available
    Text: Discontinued 7/00 - last order; 9/00 - last ship IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480BG IBM11E8480BG 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:


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    PDF IBM11D8480BA8M EOS11/11, IBM11E8480BA8M IBM11D8480BG IBM11E8480BG 72-Pin 8m x 36

    Untitled

    Abstract: No abstract text available
    Text: Discontinued 7/00 - last order; 9/00 - last ship IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480BG IBM11E4480BG 4M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:


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    PDF IBM11D4480BA4M EOS11/11, IBM11E4480BA4M IBM11D4480BG IBM11E4480BG 72-Pin

    8m x 36

    Abstract: No abstract text available
    Text: IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm


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    PDF IBM11D8480BA8M EOS11/11, IBM11E8480BA8M IBM11D8480B IBM11E8480B 72-Pin 130ns 8m x 36

    SA14-4328-01

    Abstract: No abstract text available
    Text: IBM11D2480BA2M x 36 EOS10/10, 5.0V, Sn/Pb. IBM11E2480BA2M x 36 EOS10/10, 5.0V, Au. IBM11D2480B IBM11E2480B 2M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm


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    PDF IBM11D2480BA2M EOS10/10, IBM11E2480BA2M IBM11D2480B IBM11E2480B 72-Pin 130ns SA14-4328-01

    Untitled

    Abstract: No abstract text available
    Text: IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm


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    PDF IBM11D8480BA8M EOS11/11, IBM11E8480BA8M IBM11D8480B IBM11E8480B 72-Pin 130ns

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PDM41034 1 Megabit Static RAM 128K x 8-Bit Revolutionary Pinout Description Features n High speed access times Com’l: 10, 12, 15, 17 and 20ns Ind’l.: 12, 15, 17 and 20ns n Low power operation typical - PDM41034SA Active: 400 mW Standby: 150 mW


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    PDF PDM41034 PDM41034 PDM41034SA PDM41034LA. 32-pin 300-mil 400-mil

    Untitled

    Abstract: No abstract text available
    Text: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11E4490BG IBM11D4490BG IBM11E8490BG IBM11D8490BG 4M/8M x 36 ECC-on-SIMM w/ Error Lines Preliminary Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:


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    PDF IBM11D4480BA4M EOS11/11, IBM11E4480BA4M 72-Pin 130ns IBM11E4490BG IBM11D4490BG IBM11E8490BG IBM11D8490BG

    Untitled

    Abstract: No abstract text available
    Text: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11E4490B IBM11D4490B IBM11E8490B IBM11D8490B 4M/8M x 36 ECC-on-SIMM w/ Error Lines Preliminary Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:


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    PDF IBM11D4480BA4M EOS11/11, IBM11E4480BA4M IBM11E4490B IBM11D4490B IBM11E8490B IBM11D8490B 72-Pin

    AT75C310

    Abstract: AT75C310-Q160 PQFP160
    Text: Features ARM7TDMI ARM Thumb® Processor Core Two 16-bit Fixed-point OakDSPCore® Cores 256 x 32-bit Boot ROM 88K Bytes of Integrated Fast RAM for Each DSP Flexible External Bus Interface with Programmable Chip Selects Dual Codec Interface Multi-level Priority, Individually Maskable, Vectored Interrupt Controller


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    PDF 16-bit 32-bit 07/00/0M AT75C310 AT75C310-Q160 PQFP160

    Untitled

    Abstract: No abstract text available
    Text: ta0 E J> • aS3Sb05 D D M ^ ci37 ST1 « S I E G SIEMENS SIEMENS AKTIEN GESELLSCH AF T - 'f H Æ - i o Single Operational Amplifiers TAA 762 TAA 765 Features Bipolar 1C • W ide common-mode range • Large supply voltage range • Large control range • W ide temperature range TAA 762


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    PDF aS3Sb05 Q67000-A2271 Q67000-A2273 Q67000-A524 Q67000-A599-G403 1235b05

    TCA 430

    Abstract: 431lg
    Text: LG Semicon 1M/4M Base FPM Timing Timing Waveforms -1 tRC ÌRAS ÎRP \ RAS .2 ÌRCD tRSH tCAS tT CAS 7 •<L tRAJL tRAD tASR ADDRESS \ tcRP tcSH U se. tRAH ROW t e AH. COLUMN , tRRH , t»CH tRCS WE tCAC tAA tRAC tOFF Doirr /< -^ D our y ■'v_ ?


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    PDF

    J031

    Abstract: No abstract text available
    Text: i 6 5 9 I £ 0 PS ’O N %-ñ W ï ïB FJfcl kf t] RE V. 0NIMVHQ DATE DON M. F*J S & NO. m DESCRIPTION 2 9. F e b . 1999 43609 REV I SED 3 16.J a n . 2004 054028 DELETE COLOR DIMENSION * fi É CHK. DR. H.SAKURADA K.HASEBE H.SAKURADA K.HASEBE & r W> A PPD.


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    PDF MX5-A-14P-L-B SJ031665 MX5-A-14P-L-B J031

    Untitled

    Abstract: No abstract text available
    Text: GMM7401000BS/SG-60/70/80 LG Semicon Co.,Ltd. Description The G M M 7401000BS/SG is m 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the printed circuit board with decoupling capacitors.


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    PDF GMM7401000BS/SG-60/70/80 7401000BS/SG GMM7401000BS/SG GMM7401OOOBS 7401000BSG

    Untitled

    Abstract: No abstract text available
    Text: II II High Performance 16Kx4 CMOS SRAM AS7C188 AS7C186 16Kx4 CMOS SRAM Common I/O FEATURES • O rganization: 16,384 w ords x 4 bits • High Speed: • Com pletely static memory. No clocks or timing strobe required. • Equal access and cycle times •


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    PDF 16Kx4 AS7C188 AS7C186 16Kx4 22/24-pin 20/25/30/35/45ns 440mW 110mW

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    Untitled

    Abstract: No abstract text available
    Text: ÂS7CÏ64 AS7 C IÇ 4L CMOS SHAM 1F E A T U R E S • Organization: 8,192 words x 8 bits • Completely static memory. No clocks or timing strobe required. • Equal access and cycle times • Automatic power-down when de-selected • For high density, a slim 300 mil. 28-pin package


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    PDF 28-pin 550mW 110mW

    I1244

    Abstract: D42S18165 LH 446
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿P D 4 2 S1 8 1 6 5L, 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page


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    PDF 16-BIT, uPD42S18165L uPD4218165L /iPD42S18165L iiPD42S18165L, 4218165L 50-pin 42-pin 1PD42S18165L-A60, 4218165L-A60 I1244 D42S18165 LH 446

    RAS 05

    Abstract: HB56D436SBR-7AC HB56D436BR-7A HBS6D436SBR-8A hb56d436br-6ac
    Text: HB56D436 Series 4,194,304-word x 36-bit High D ensity D ynam ic R AM Module T h e H B 56D 436 is a 4 M x 36 d y n am ic RA M m o d u le, m ounted 8 p iece s o f 16 -M b it D R A M H M 5117400A S sealed in SO J package and 4 p ie c e s o f 4 -M b it D R A M (H M 5 1 4 1 0 0 B S /C S )


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    PDF HB56D436 304-word 36-bit 117400A HB56D436BR-6A HB56D436BR-7 RAS 05 HB56D436SBR-7AC HB56D436BR-7A HBS6D436SBR-8A hb56d436br-6ac