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    TE Connectivity TAA755A1611-002

    CIRC CBL 5POS RCPT TO PLUG 3.28'
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    TE Connectivity TAA755A5501-001

    CIRC CBL 5POS RCPT TO PLUG 1.64'
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    TE Connectivity TAA755A5501-020

    CIRC CBL 5POS RCPT TO PLUG 6.56'
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    TE Connectivity TAA755A1611-001

    CIRC CBL 5POS RCPT TO PLUG 1.64'
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    TE Connectivity TAA755A5501-040

    CIR CBL 5POS RCPT TO PLUG 13.12'
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    TAA 755 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HM51W18165JI-6

    Abstract: HM51W18165JI-7 HM51W18165LJI-6 HM51W18165LJI-7 Hitachi DSA0015
    Text: HM51W18165I Series 1048576-word x 16-bit Dynamic RAM ADE-203-755A Z Rev. 1.0 Mar. 10, 1997 Description The Hitachi HM51W18165I is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W18165I offers


    Original
    HM51W18165I 1048576-word 16-bit ADE-203-755A 576-word 16-bit. 42-pin ns/70 HM51W18165JI-6 HM51W18165JI-7 HM51W18165LJI-6 HM51W18165LJI-7 Hitachi DSA0015 PDF

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: HM51W18165I Series 1048576-word x 16-bit Dynamic RAM ADE-203-755A Z Rev. 1.0 Mar. 10, 1997 Description The Hitachi HM51W18165I is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W18165I offers


    Original
    HM51W18165I 1048576-word 16-bit ADE-203-755A 576-word 16-bit. 42-pin ns/70 Hitachi DSA00164 PDF

    M5M44500CJ

    Abstract: M5M418160 M5M44500 M5M418160CJ
    Text: MITSUBISHI LSIs Preliminary Spec Some of contents are subject to change without notice. MH2M36CAXJ/CANXJ-5,-6,-7 FAST PAGE MODE 75510432 -BIT 2097512-WORD BY 36-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Double side] DESCRIPTION The MH2M36CAXJ/CANXJ is 2097512-word x 36-bits dynamicRAM.


    Original
    MH2M36CAXJ/CANXJ-5 2097512-WORD 36-BIT MH2M36CAXJ/CANXJ 36-bits MH2M36CAXJ/CANXJ-5 MH2M36CAXJ/CANXJ-6 MH2M36CAXJN-3 MIT-DS-0112-0 M5M44500CJ M5M418160 M5M44500 M5M418160CJ PDF

    TAA 755

    Abstract: hidden refresh
    Text: ¡ Semiconductor ADDENDUM H ¡ Semiconductor ADDENDUM H Memory Module AC Timing Waveforms Read Cycle tRC VIH – RAS VIL – tCSH tCRP CAS tRP tRAS tRCD VIH – VIL – tCRP tRSH tCAS   ,  ,      ,    , ,      tRAD


    Original
    PDF

    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


    Original
    PDF

    M5M418160

    Abstract: No abstract text available
    Text: P ir IIBm l m is u ra B [p § M it s u b is h i ls is S o m e o f co n ten ts a ie s u b r e t t a ch a n g e w i h o u t n o t c e . A A I I A A A X X I / A K I X X I IV In ¿IV Io 0 O A A J /O A I\IA J -0 ,-0 ,- / FAST PAGE MODE 75510432-BIT (2097512-WORD BY 36-BIT DYNAMIC RAM


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    75510432-BIT 2097512-WORD 36-BIT 2097512-w 36-bits MIT-DS-0112-0 72pin M5M418160 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM51W18165I Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-755A Z Rev. 1.0 Mar. 10, 1997 Description The Hitachi HM51W18165I is a CMOS dynamic RAM organized as 1,048,576-word X 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W18165I offers


    OCR Scan
    HM51W18165I 1048576-word 16-bit ADE-203-755A 576-word 16-bit. 42-pin ns/70 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its


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    KM41C4001B KM41C4001B 304x1 110ns KM41C4001B-7 130ns KM41C4001B-8 KM41C4001B-6 150ns 20-LEAD PDF

    TAA 840

    Abstract: TAA 550
    Text: September, 1985 z' - r á -•t f flih T fíÜ ¡¿ MMy 6 -£ fV PlS~ ~?SLj MB7754-10CF CUSTOM 16384 BIT ECL RAM s - 3 / 001993 (1024 X 1 X 16 ARRAYS) r . / f « FUJITSU LIMITED 1 (OiV-y F u 3 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS RATING SYMBOL


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    MB7754-10CF TAA 840 TAA 550 PDF

    TAA 840

    Abstract: MB7754-10CF dolc
    Text: September, 1985 ¿ JÍ5 6? i n t m & • r * * ' ^ 6 - s eü /V ß i7^~9 . MB7754-10CF CUSTOM 16384 BIT ECL RAM S - 3 / 001993 (1024 X 1 X 16 ARRAYS) r . / f « . FUJITSU LIMITED 1 This Material Copyrighted By Its Respective Manufacturer f ^ u j ELECTRICAL CHARACTERISTICS


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    MB7754-10CF TAA 840 MB7754-10CF dolc PDF

    42-10A

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 4 2 1 0 A , 4 2 4 2 1 0 A 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description ThepPD 42S4210A , 424210 A are 262 144 w ords by 16 bits dynam ic CMOS RAMs w ith optional hyper page


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    16-BIT, 42S4210A /iPD42S4210A, 24210A 44-pin 40-pin 42S4210A-50, b427525 /tPD42S4210A, 42-10A PDF

    r041

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The GMM7361000BSS/SGS is an 1M x 36 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x lbit DRAMs in 20/26 pin SOJ package on both sides the printed circuit board with


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    GMM7361000BSS/SGS GMM7361000BSS/SGS I1101111 P71MI r041 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA S H E E T 4 M-BIT DYNAMIC RAM 256 K-WORD B Y 16-BIT, HYPER PA GE MODE, B Y T E READ/W RITE MODE Description The ^PD42S4210-60-G,424210-60-G is 262 144 words by 16 bits dynamic CM OS RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.


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    16-BIT, PD42S4210-60-G 424210-60-G /PD42S4210-60-G 44-pin 40-pin J/PD42S4210-60-G 424210-60-G pPD42S4210-60-G PDF

    4216100

    Abstract: sm 0038 PIN DIAGRAM M81B42
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4216100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE Description The /iPD4216100, 4217100 are 16 777 216 w o rd s b y 1 b it d y n a m ic CMOS RAMs. These are packed in 26-pin Plastic TSOP II and 26-pin Plastic SOJ.


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    uPD4216100 uPD4217100 /iPD4216100, 26-pin //PD4216100-50 /iPD4217100-50 IPD4216100-60 pPD4217100-60 /jPD4216100-70 4216100 sm 0038 PIN DIAGRAM M81B42 PDF

    Untitled

    Abstract: No abstract text available
    Text: - PRELIMINARYMarch 1995 Edition 3.0 PRO DUCT PROFILE SHEET — FUJITSU M B 8 1 1 7 4 0 0 A -50/-60/-70 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400A is a fully decoded CMOS Dynamic RAM DRAM that contains


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    MB8117400A 024-bits 374175b Q011217 PDF

    M5M44500

    Abstract: M5M44500CJ 9D01 M5M418160D M5M418160DJ
    Text: MITSUBISHI LSIs Some of contents are subject to change without notice. > M a i i ^ m n ¿ M <• ^ ^ # o b U A • i p v p. « j / U N X > p ^ _ J - o 5- o , - 7 FAST PAGE MODE 75510432-BIT 2097512-WORD BY 36-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW)


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    75510432-BIT 2097512-WORD 36-BIT MH2M36DXJ/DNXJ 36-bits MIT-DS-0193-0 26/June M5M44500 M5M44500CJ 9D01 M5M418160D M5M418160DJ PDF

    4218160

    Abstract: NEC 4218160 nec A2C UPD42S18160
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /tPD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.


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    uPD42S18160 16-BIT, /tPD42S18160, /xPD42S18160 50-pin 42-pin iPD42S18160-60, iPD42S18160-70, VP15-207-2 M27S25 4218160 NEC 4218160 nec A2C PDF

    1CP121

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 V 1 6 4 1 0 A S e r ie s 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY51V16410A HY51V1641OA 1AD32-00-M HY51V16410AJC HY51V16410ASLJC HY51V16410ATC HY51V16410ASLTC HY51V16410ARC 1CP121 PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY51V16410A HY51V1641 D32-00-MAY94 4b75Dflfl HY51V16410AJC HY51V16410ASLJC HY51V16410ATC HY51V16410ASLTC PDF

    km44c4104

    Abstract: GZ22
    Text: KM44C4104A/AL/ALL/ASL CMOS DRAM 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC tHPC 20ns KM44C4104A/ALVALL/ASL-5 50ns 13ns 90ns KM44C4104A/ALVALL/ASL-6 60ns 15ns 110ns 24ns KM44C4104A/AL/ALL/ASL-7


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    KM44C4104A/AL/ALL/ASL KM44C4104A/ALVALL/ASL-5 KM44C4104A/ALVALL/ASL-6 KM44C4104A/AL/ALL/ASL-7 KM44C4104A/AL/ALL/ASL-8 110ns 130ns 150ns 24-LEAD 400MIL, km44c4104 GZ22 PDF

    IRF 748 n

    Abstract: PD4264800
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD4264800, 4265800 are 8,388,608 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.


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    uPD4264800 uPD4265800 PD4264800, 32-pin jUPD4264800 D4265800-A50 /JPD4264800-A60 PD4264800. PD4264800G5-7JD, IRF 748 n PD4264800 PDF

    mfj 752

    Abstract: taa 723 300MIL
    Text: KM44C4104A/AL/ALL/ASL CMOS DRAM 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: KM44C4104A/AL/ALL/ASL-5 tBAC tCAC tRC tHPC 50ns 13ns 90ns 20ns KM44C4104A/AL/ALL/ASL-6 60ns 15ns 110ns 24ns KM44C4104A/AL/ALL/ASL-7


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    KM44C4104A/AL/ALL/ASL KM44C4104A/AL/ALL/ASL-5 KM44C4104A/AL/ALL/ASL-6 110ns KM44C4104A/AL/ALL/ASL-7 130ns KM44C4104A/AL/ALL/ASL-8 150ns cycles/32ms cycles/128ms mfj 752 taa 723 300MIL PDF

    Untitled

    Abstract: No abstract text available
    Text: - PRELIMINARYMarch 1995 Edition 2.1 FUJITSU PRO DUCT PROFILE SHEET MB 8 116160 A- 60/-70 CMOS 1M X 16BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116160A is a fully decoded CMOS Dynamic RAM DRAM that contains


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    16BIT MB8116160A 16-bit 256-bits 374175b 1117b PDF

    4800L

    Abstract: IC-3052B uPD424800 UPD42S480
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    uPD42S4800L uPD424800L PD42S4800L, 424800L PD42S4800L 28-pin //PD42S4800L-A70, 424800L-A70 /JPD42S4800L-A80, 4800L IC-3052B uPD424800 UPD42S480 PDF