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    TAA 761 A Search Results

    TAA 761 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD5761ARUZ Analog Devices 16-BIT 8LSB, No Reference Visit Analog Devices Buy
    AD9761ARSZRL Analog Devices 10-Bit, 40 MSPS Dual DAC Visit Analog Devices Buy
    ADP1761ACPZ1.25-R7 Analog Devices 1ALowVin, VeryLow DO low noise Visit Analog Devices Buy
    ADP1761-ADJ-EVALZ Analog Devices Adjustable output evaluation b Visit Analog Devices Buy
    AD5761ARUZ-RL7 Analog Devices 16-BIT 8LSB, No Reference Visit Analog Devices Buy

    TAA 761 A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TAA761A Unknown IC Datasheets - Shortform Scan PDF
    TAA761A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TAA761A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    TAA 761 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TCA311

    Abstract: TBB 1458 tca 311 tab-1453 tca 765 TCA 325 A TCA331 tca 761 TAA761 TAA 761 A
    Text: Integrated Circuits Operational amplifiers with NPN input Single op amps Type ^amb Kt V TAA761 G* TAA765G * TAA861 G* TAA865G * TAA 761 K JQ mA Characteristics famb =25 °C, K s=15V d v q / dt r K c Ko h V |iA V/jis mV 70 70 70 70 70 ±6 ±6 ±10 ±10


    OCR Scan     		PDF TAA861 TCA331 TBA221 TBB741 TCA311 TBB 1458 tca 311 tab-1453 tca 765 TCA 325 A tca 761 TAA761 TAA 761 A

    information applikation

    Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
    Text: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK


    OCR Scan     		PDF

    TAA 761 A

    Abstract: 85280-X 814100 TAA 761 Application fujitsu 814100 B8528
    Text: M ay 1990 IP R O D U C T p r o f il e FUJITSU : MB85280-80/-10/-12 CMOS 4M X 8 FAST PAGE MODE DRAM MODULE The Fujitsu M B 85280 is a fully decoded, C M O S dynam ic random access m em ory D R A M m odule consisting o f eight M B814100 devices. The M B85280 is optim ized fo r tho se applications requiring high speed, high


    OCR Scan     		PDF MB85280-80/-10/-12 B814100 B85280 30-pad 661REF TAA 761 A 85280-X 814100 TAA 761 Application fujitsu 814100 B8528

    Untitled

    Abstract: No abstract text available
    Text: HY U NDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling


    OCR Scan     		PDF HYM594000B HY5117400 HY514100A HYM594000BM/BLM compa-MAY93 DD16B2 4k750flA 0Q01flfl3

    LC 7258

    Abstract: 7C266 203CE
    Text: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)


    OCR Scan     		PDF CY7C266 CY7C266 32-Pin 28-Lead 600-Mil) LC 7258 7C266 203CE

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16410A HY51V1641 D32-00-MAY94 4b75Dflfl HY51V16410AJC HY51V16410ASLJC HY51V16410ATC HY51V16410ASLTC

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 S E R IE S 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.


    OCR Scan     		PDF MC-428000A32 32-BIT 110ns 428000A32-60 428000A32-70â b457525

    5117404

    Abstract: No abstract text available
    Text: HY 5117404A Series “H Y U N D A I 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 117404A HY5117404A HY5117404A 1A038-10-MAY95 DD45DD HY5117404AJ HY5117404ASLJ HY51174CMAT 5117404

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?


    OCR Scan     		PDF BR2865A DIP28pin BR2865A) BR2864A 250ns

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 18160B 16-bit HY51V18160B 16-bit. 4b75Qfl8 1AD56-10-MAY9S HY51V18160BJC

    tantalum Capacitor A8 Jh

    Abstract: No abstract text available
    Text: 21014 1M 262,144 x 4 DYNAMIC RAM WITH FAST PAGE MODE • Performance Range Parameter 21014-07 21014-08 Units tRAC Access Time from RAS 70 80 ns *CAC Access Time from CAS 20 25 ns tRC Read Cycle Time 130 160 ns Symbol ■ Fast Page Mode Operation ■ Single 5V ±10% Power Supply


    OCR Scan     		PDF 20-LEAD tantalum Capacitor A8 Jh

    M5M417400BJ

    Abstract: M5M417400B
    Text: M 5 M 7S 4 1 7 4 0 0 B J ,T P ,R T -5 ,- 6 ,- 7 ,-5 S , FAST PAGE MODE 16777216-BIT 41943Û4-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for large-capacity memory systems where high speed, low power


    OCR Scan     		PDF 16777216-BIT 4194304-word M5M417400BJ M5M417400B

    Untitled

    Abstract: No abstract text available
    Text: SAHSUN6 ELECTRONICS INC b?E ]> WË TlbMlME 0 0 1 b 0 ? l KM41C16100L T'îS • sriGK CMOS DRAM 16M X1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­


    OCR Scan     		PDF KM41C16100L KM41C16100L 110ns KM41C16100L-7 130ns KM41C16100L-8 KM41C16100L-6 150ns 47/iF 100/iF

    k3882

    Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
    Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d


    OCR Scan     		PDF

    MC-422000FA64FB

    Abstract: No abstract text available
    Text: PRELIM INARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / MC-422000FA64FB 2 M-WORD BY 64-BIT DYNAMIC RAM MODULE HYPER PAGE MODE Description The MC-422000FA64FB is a 1,048,576 words by 64 bits dynamic RAM module on which 8 pieces of 16 M DRAM: /iPD4218165 are assembled.


    OCR Scan     		PDF MC-422000FA64FB 64-BIT MC-422000FA64FB uPD4218165 b427525 L427S25

    AN 7112E

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS F U JIT SU 53E D 3 7 417b2 PROGRAMMABL SCHOTTKY? 256!-B ll READ?ONÜfMEMOR’ QQDÖ737 MB MB MB MB ñ 7111E/H 7112E/H/Y 7111L 7112L March 1986 Edition 2.0 SCHOTTKY 256 BIT DEAP PROM 32 WORDS x 8 BITS The Fujitsu MB 7111 and MB 7112 are high speed Schottky T T L electrically


    OCR Scan     		PDF 417b2 7111E/H 7112E/H/Y 7111L 7112L 20-PAD LCC-20C-F02) 20PLCS) C20004S-1C AN 7112E

    Untitled

    Abstract: No abstract text available
    Text: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56G19 is a 1M x 9 dynamic RAM module, mount­ ed two 4 Mbit DRAM HM514400AS sealed in SOJ package and 1 Mbit DRAM (HM511000AJP) sealed in SOJ package.


    OCR Scan     		PDF HB56G19 576-Word HM514400AS) HM511000AJP) 30-pin HB56G19A) HB56G19B/

    333Q

    Abstract: 27C64 CY7C266 a50tb
    Text: CY7C266 5 f C Y PR ESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Direct replacement for 27C64


    OCR Scan     		PDF CY7C266 27C64 CY7C266 600-mil-wide 45LMB 32-Pin CY7C266â 45QMB 333Q a50tb

    Untitled

    Abstract: No abstract text available
    Text: MH8M40AJD-6,-7 FAST PAGE MODE 335544320-BIT 8388608-WORD BY 40-BIT DYNAMIC RAM DESCRIPTION The M H 8 M 4 0 A J D is 8 3 8 8 6 0 8 -w o rd x 4 0 -b it d yna m ic R AM . PIN CONFIGURATION (TOP VIEW) [Both side, 2-Layer] This c o n s is ts o f tw e n ty in d u s try sta n d a rd 4 M x 4 d ynam ic


    OCR Scan     		PDF MH8M40AJD-6 335544320-BIT 8388608-WORD 40-BIT) 16400A

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C4000 44C4000-7 130ns 150ns 44C4000-6 100/jF 24-LEAD

    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


    OCR Scan     		PDF

    KM428C128

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 SAMSUNG ELECTRONICS INC 7 = ^ 4 1 4 2 OaiGbMb T 42E D 128KX8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 12 8 K X 8 bit Dual


    OCR Scan     		PDF KM428C128 128KX8 428C128 150ns 180ns 75ansfer D01QL7S 40-PIN KM428C128

    Untitled

    Abstract: No abstract text available
    Text: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)


    OCR Scan     		PDF IBM11M2645H 2Mx64 104ns 124ns

    FZH 191

    Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
    Text: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine


    OCR Scan     		PDF Integrie8510. FZH 191 FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281