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    ADLINK Technology Inc 92-ME440-3110 (512GB MSATA MLC-ET)

    INNODISK 512GB MSATA WITH TOSHIBA 15NM 3ME3 MLC, INDUSTRIAL GRADE - Bulk (Alt: 92-ME440-3110 (512)
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    ADLINK Technology Inc SSD-128GB SATA MLC

    Solid State Drives - SSD 128 GB
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    Mouser Electronics SSD-128GB SATA MLC
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    ADLINK Technology Inc SSD-512G SATA MLC

    Solid State Drives - SSD 2.5" SATA SSD 3MG2-P 512GB Flash Type:MLC Input voltage:+5DC +- 5% Operating temperatue : 0? 70?:
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    Mouser Electronics SSD-512G SATA MLC
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    ADLINK Technology Inc SSD-256GB SATA MLC

    Solid State Drives - SSD 2.5" SATA SSD 3MG2-P 256GB Flash Type:Micron MLC SATA interface Sequential:Read(520MB/sec)/Write(300 MB/sec) Input voltage: 5V 5% Operating Temperature: 0 70?:
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    Mouser Electronics SSD-256GB SATA MLC
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    ADLINK Technology Inc DOM-8G-7V(SATA) MLC

    Solid State Drives - SSD SATADOM-SV 3ME3 8GB Flash Type: Toshiba MLCType: VerticalInterface: SATA III standard(6Gb/s)Sequential: Read:100(MB/s), Write:20(MB/s)Operating Temperature: 0-70C39.4*20.5*7.9 mm
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    Mouser Electronics DOM-8G-7V(SATA) MLC
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    TAML Datasheets Context Search

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    smd transistor marking EY

    Abstract: SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11
    Text: m&s.lTio2/16E U November 1964 WPFR5S7XNG MIL-B-195C+6D 27 Eecember 1*1 MILITASY SPECITICAT20N TRANSISTOR, GVN, SILICON TTPES 2N3.42, 2NX% , A:lD 2N343 i, mandatory for “8. of the DePart.mnt of Defame. by all ‘211h SDOoifiCd.iorJ Awmim 1. tamlt~ md -E 1.1


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    PDF lTio2/16E MIL-B-195C SPECITICAT20N 2N343 NIL-S-195Cr2 qF02ifi+ 2N342 411wII. 2N342 2N342A, smd transistor marking EY SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 3 - DECEMBER 1995 O_ FEATURES * 200 Volt V DS * ^DS on = P A R T M A R K IN G D E T A I L - M U SOT23 ABSOLUTE M A X IM U M RATINGS. VALUE UNIT V Ds 200 V C ontinuous Drain Current at Tamlj=250C


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    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTCHNAHONAL ELECTRONICS LTD, BC556 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER Package: TO-92 * Complement To BC546 * High Voltage * Collector-Emitter Voltage : Veeo=-65V ABSOLUTE MAXIMUM RATINGS at Taml»=25*C


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    PDF BC556 BC546 -10mA 100mA -10mA -100mA 200uA

    Untitled

    Abstract: No abstract text available
    Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION 1 l * t PARTMARKING DETAIL FM M V109-4A 1 3 ABSOLUTE MAXfMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamlj=25°C Ptot Tj-Tjtg Operating and Storage Temperature Range VALUE UNIT 330 mW


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    PDF V109-4A 250MHz V/25V, 50MHz

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L VALUE UNIT v CBO -50 V v CEO -45 V V EBO -5 V Peak Pulse Current 'cm -1 A Continuous Collector Current 'c -800 mA Power Dissipation at Tamlj=25°C ^tot


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    PDF -100nA -100jiA -500mA, -50mA* -300mA, -100mA, 300mA, 50MHz

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt V,DS R DS on -8£2 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage Continuous Drain Current at Tamly=250C Pulsed Drain Current Gate Source Voltage VALUE UNIT < o tn PARAMETER


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    PDF 0Q1Q354 001G35S

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -JUNE 94_ FEATURES * 60 V olt VQS * R DS on = 1 ß REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Vos 60 V •d 600 mA A Continuous Drain Current at Tamlf=25°C


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    PDF ZVN4206A

    BAT 127

    Abstract: A502GE A503GE byv 20 BYV 35 CB-127
    Text: silicon signal diodes O diodes de signal au silicium Type VRRM V |R ! V r max WA) (V) 'F 'O* ImA) schottky diodes BAR BAT BAR BAT THOMSON'CSF vf max (V) / if ImA) C / max (pF) Dynamic parameter« Vr IV) Tamlb = 25°C diodes sch ottky 19 29 35 19 4 5 5 10


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    PDF /10mA /20mA CB-247 CB-18 BAT 127 A502GE A503GE byv 20 BYV 35 CB-127

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 350 Volt VDS R OS on = 3 5 i î ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VDS 350 V b 90 mA 1 A ±20 V 700 mW -55 to +150 °C Drain-Source Voltage Continuous Drain Current at Tamlj=250C


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    PDF 100mA 300ns. ZVN2535A

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 200 Volt VDS * R DS on = 2 5 £ î ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Continuous Drain Current at Tamlj=25°C VALUE UNIT < o (/> Drain-Source Voltage


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    PDF 001G35S

    LS604

    Abstract: 74ls604 SN74LS604
    Text: TYPES SN54LS604 THRU SN54LS607, SN74LS604 THRU SN74LS607 OCTAL 2-INPUT MULTIPLEXED LATCHES D 2545, JU L Y 1979 - R E V IS E D D E C E M B E R 1 9 8 3 T IM 9 96 0 4 T H R U T IM 9 9 6 07 Choice of Outputs: Three-State ('LS604,LS606) Open-Collector ('LS605, 'LS607)


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    PDF SN54LS604 SN54LS607, SN74LS604 SN74LS607 LS604, LS606) LS605, LS607) LS605) LS604 74ls604

    ericsson bml 403

    Abstract: PBL3764 TRANSISTOR ztx 105 3a OE RSG Series TRANZORB ericsson slic JW216 TRANSISTOR ztx 105 3a circuit diagram
    Text: ERICSSON ^ September 1989 PBL 3764 Subscriber Line Interface Circuit Description Key Features The PBL 3764 Subscriber Line Interface Circuit SLIC is a bipolar integrated circuit in 75 V technology which replaces the conventional transform er based analog line


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    PDF PBL3764N* 3764J 3764/2J 3764QN* 3764QC 3764/2QC 3764CC ericsson bml 403 PBL3764 TRANSISTOR ztx 105 3a OE RSG Series TRANZORB ericsson slic JW216 TRANSISTOR ztx 105 3a circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: HD153011 2-7 RLL ENDEC built-in VFO Description The HD153011 is a 2-7 R L L EN D EC built-in VFO IC developed for magnetic disks. This device decodes a 2-7 R L L signal read from a magnetic disk into an N R Z signal, and encodes an NRZ signal to be written to a magnetic disk into a 2-7


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    PDF HD153011 HD153011 AIC-6110, CL-SH260/250

    54S474

    Abstract: tea 1601 t 54S473 3014 LED 82s141 hf 13005 t1al fuse 13005 TRANSISTOR SEC 13005 transistor 13005 can be replaced with
    Text: 1 MIL-M-38510/208C 31 J a n u a r y 1 9 8 4 iÜKtKbEÜING MIL-M-38510/208B 16 A u g u s t 1 9 8 2 MILITARY SPECIFICATION BIPOLAR, MICROCIRCUITS, DIGITAL, 4096-BIT STHOTTKY P R O G R A M M A B L E R E A D - O N L Y M E M O R Y P RO M , M O N O L I T H I C


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    PDF MIL-M-38510/208C MIL-M-38510/208B 4096-BIT I-M-3A510, H1L-H-3S510. 54S473/Nat1ona1 5349-1/Monoi 29621/Raytheon CRP/07933 54S472/Nat1onal 54S474 tea 1601 t 54S473 3014 LED 82s141 hf 13005 t1al fuse 13005 TRANSISTOR SEC 13005 transistor 13005 can be replaced with

    dilmon 28

    Abstract: transistor DA 218
    Text: be!E D • 37bfi522 DD1770R RflO m P L S B PSLU4I G E C P L E S S E Y GEC PLESSEY SEMICONDS S E M I C O N D U C T O R S DS2349-2.2 ULA DA SERIES ANALOG/DIGITAL MIXED SIGNAL ARRAY FAMILY Supersedes June 1990 Edition The ULA DA Series is a family of 8 arrays developed to


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    PDF 37bfi522 DD1770R DS2349-2 dilmon 28 transistor DA 218

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L E S S E Y S I >1 I t O S I l ( I D ADVANCE INFORMATION l< S SP8854D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP8854D is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts In the


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    PDF SP8854D SP8854D SP8852D SP6655D OP-27G L7812CP BB405B 40MHz

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR M EDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - NOVEMBER 1995 P A R T M A R K IN G D E T A IL - FMMT495 O_ §: 495 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage


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    PDF FMMT495 100nA VctP150V 250mA, 500mA,

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    TAA812

    Abstract: RS50
    Text: HIGH GAIN OPERATIONAL AMPLIFIER TAA8I2 T E N T A T IV E D A T A The TAA812 is a g en eral purpose high gain operatio n al a m p lifie r on a m onolithic silico n chip. The device is fully com pensated w ith the addition of a single cap a cito r sta b ilisin g the c irc u it. Used a s a c o m p a rato r the


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    PDF TAA812 TAA812 RS50

    4742A

    Abstract: 4735 zener zener 4733 4732A 4739A 4749A 4731A 1N4187
    Text: o zener diodes diodes zener THOMSON-CSF Types Vzr/IZT* rZT/l2T* nom V max A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A B B B B B B B 3,3 3,6 3,9 4,3 4,7 5,1 5,6 6,2 6,8 7,5 8,2 9,1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39


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    lm 2902 n

    Abstract: No abstract text available
    Text: SGS-THOMSON LM 2902 Id i LOW POWER QUAD OPERATIONAL AMPLIFIER LARGE VOLTAGE GAIN : 100 dB VERY LOW SUPPLY CURRENT/AMPLI 375 |jA LOW INPUT BIAS CURRENT : 20 nA LOW INPUT OFFSET VOLTAGE : 2 mV LOW INPUT OFFSET CURRENT : 2 nA WIDE POWER SUPPLY RANGE : . SINGLE SUPPLY : + 3 V TO + 30 V


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    PDF DIP14 CERDIP14 LM2902 lm 2902 n

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    TDA7057AQ

    Abstract: 2000 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM TDA7057A TDA7057 DC VOLUME CONTROL MSA716
    Text: Philips Sem iconductors O bjective specification 2 x 5 W stereo BTL audio output amplifier with DC volume control TDA7057AQ FEATURES GENERAL DESCRIPTION • DC volume control The TDA7057AQ is a stereo BTL output amplifier wih DC volume control in a 13-pin medium power package. The


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    PDF TDA7057AQ TDA7057AQ 13-pin MSA713 Julyi994 711Qfl2t, Q062D34 711062b 2000 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM TDA7057A TDA7057 DC VOLUME CONTROL MSA716

    10 35L V6

    Abstract: 10 35L DIODE 74ALVC164245 74ALVC164245DGG 74ALVC164245DL diode 10 35L 35L DIODE
    Text: Philips Semiconductors Product Specification 16-Bit dual supply translating transceiver; 3-state 74ALVC164245 FEATURES • QUICK REFERENCE DATA GND = 0 V; Tamb = 25°C; tr = t, < 2.5 ns Wide supply voltage range A port: 1.2 to 3.6 V B port: 1.2 to 5.5 V In accordance with JEDEC


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    PDF 16-Bit 74ALVC164245 74ALVC164245 16-bit 10 35L V6 10 35L DIODE 74ALVC164245DGG 74ALVC164245DL diode 10 35L 35L DIODE