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    TANAKA WIRE 10 MILS Search Results

    TANAKA WIRE 10 MILS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5XRJ11PPXS-014 Amphenol Cables on Demand Amphenol MP-5XRJ11PPXS-014 Flat Silver Satin Modular Crossed wiring Cable, RJ11 / RJ11 14ft Datasheet
    MP-64RJ4528GB-003 Amphenol Cables on Demand Amphenol MP-64RJ4528GB-003 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Blue 3ft Datasheet
    MP-64RJ4528GG-014 Amphenol Cables on Demand Amphenol MP-64RJ4528GG-014 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Green 14ft Datasheet
    MP-64RJ4528GR-007 Amphenol Cables on Demand Amphenol MP-64RJ4528GR-007 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Red 7ft Datasheet
    MP-64RJ4528GY-003 Amphenol Cables on Demand Amphenol MP-64RJ4528GY-003 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Yellow 3ft Datasheet

    TANAKA WIRE 10 MILS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tanaka wire

    Abstract: MAC-3070 shinetsu tanaka au wire EME-6730UC Ablestik KMC-184 g991 EME-6730 tanaka wire 10 mils
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: November 18, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: G9911-05 Product Affected: All Platic packages Product Mark Back Mark Manufacturing Location Affected: ALL


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    G9911-05 KMC184 KMC184VA EME-6730 EME-9730 Mil-Std-883, tanaka wire MAC-3070 shinetsu tanaka au wire EME-6730UC Ablestik KMC-184 g991 tanaka wire 10 mils PDF

    tanaka TS3332LD

    Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
    Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


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    12-May-08 P1032-BD MIL-STD-883 parD-000V XP1032-BD-EV1 XP1032-BD tanaka TS3332LD XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK PDF

    tanaka gold wire

    Abstract: tanaka TS3332LD epoxy XP1056-BD XP1056-BD-EV1 XP1056-BD-000V tanaka TS3332LD
    Text: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


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    12-May-08 P1056-BD MIL-STD-883 bD-000V XP1056-BD-EV1 XP1056-BD tanaka gold wire tanaka TS3332LD epoxy XP1056-BD-EV1 XP1056-BD-000V tanaka TS3332LD PDF

    XP1054-BD

    Abstract: XP1054-BD-000V XP1054-BD-EV1 DM6030HK tanaka TS3332LD
    Text: 33.0-36.0 GHz GaAs MMIC Power Amplifier P1054-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 3W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +33.5 dBm P1dB Compression Point +34.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


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    12-May-08 P1054-BD MIL-STD-883 parD-000V XP1054-BD-EV1 XP1054-BD XP1054-BD-000V XP1054-BD-EV1 DM6030HK tanaka TS3332LD PDF

    Untitled

    Abstract: No abstract text available
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 28-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


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    28-May-08 P1057-BD MIL-STD-883 surfaD-000V XP1057-BD-EV1 XP1057-BD PDF

    tanaka gold wire

    Abstract: tanaka wire XP1057-BD DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 18 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


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    12-May-08 P1057-BD MIL-STD-883 surfaD-000V XP1057-BD-EV1 XP1057-BD tanaka gold wire tanaka wire DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy PDF

    tanaka gold wire

    Abstract: tanaka au wire DM6030HK tanaka TS3332LD
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


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    16-Oct-08 P1070-BD MIL-STD-883 chipD-000V XP1070-BD-EV1 XP1070-BD tanaka gold wire tanaka au wire DM6030HK tanaka TS3332LD PDF

    tanaka TS3332LD

    Abstract: TS3332LD
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


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    16-Oct-08 P1057-BD MIL-STD-883 sD-000V XP1057-BD-EV1 XP1057-BD tanaka TS3332LD TS3332LD PDF

    tanaka TS3332LD

    Abstract: tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


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    28-Sep-08 P1070-BD MIL-STD-883 chD-000V XP1070-BD-EV1 XP1070-BD tanaka TS3332LD tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD PDF

    XP1055-BD

    Abstract: tanaka TS3332LD epoxy
    Text: 34.0-36.0 GHz GaAs MMIC Power Amplifier P1055-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


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    12-May-08 P1055-BD MIL-STD-883 parD-000V XP1055-BD-EV1 XP1055-BD tanaka TS3332LD epoxy PDF

    tanaka TS3332LD

    Abstract: tanaka TS3332LD epoxy XP1059 XP1059-BD-000V DM6030HK-Pt tanaka gold wire TS3332LD XP1059-BD-EV1 tanaka gold wire current tanaka wire
    Text: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power


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    12-May-08 P1059-BD MIL-STD-883 passivatiD-000V XP1059-BD-EV1 XP1059-BD tanaka TS3332LD tanaka TS3332LD epoxy XP1059 XP1059-BD-000V DM6030HK-Pt tanaka gold wire TS3332LD XP1059-BD-EV1 tanaka gold wire current tanaka wire PDF

    tanaka wire

    Abstract: dm6030hk tanaka epoxy
    Text: 14.0-16.0 GHz GaAs MMIC Power Amplifier P1058-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power


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    12-May-08 P1058-BD MIL-STD-883 passivatiD-000V XP1058-BD-EV1 XP1058-BD tanaka wire dm6030hk tanaka epoxy PDF

    XP1071-BD-000V

    Abstract: tanaka gold wire ts333 tanaka au wire XP1071 XP1071-BD-EV1 tanaka TS3332LD tanaka TS3332LD epoxy
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power


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    28-Sep-08 P1071-BD MIL-STD-883 surfaD-000V XP1071-BD-EV1 XP1071-BD XP1071-BD-000V tanaka gold wire ts333 tanaka au wire XP1071 XP1071-BD-EV1 tanaka TS3332LD tanaka TS3332LD epoxy PDF

    tanaka TS3332LD epoxy

    Abstract: XP1073-BD P1073-BD ka-band bare
    Text: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


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    14-Jul-08 P1073-BD MIL-STD-883 XP1073-BD-000V tanaka TS3332LD epoxy XP1073-BD ka-band bare PDF

    ts333

    Abstract: tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt
    Text: 2.0-16.0 GHz GaAs MMIC Frequency Divider April 2007 - Rev 17-Apr-07 E1000-BD Features Divide-by-Four +5.0 dBm Output Power -30 dBc Fundamental Leakage Single-ended or Differential Input & Output 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    17-Apr-07 E1000-BD MIL-STD-883 XE1000-BD XE1000-BD-000V XE1000-BD-EV1 XE1000 ts333 tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002 December 2005 - Rev 08-Dec-05 Features Chip Device Layout Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing


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    08-Dec-05 X1002 125mA MIL-STD-883 PDF

    6OSC0460

    Abstract: DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1
    Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    17-Apr-07 Q1000-BD 100KHz MIL-STD-883 XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 XQ1000 6OSC0460 DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 PDF

    tanaka TS3332LD epoxy

    Abstract: No abstract text available
    Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    17-Apr-07 Q1000-BD 100KHz MIL-STD-883 XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 XQ1000 tanaka TS3332LD epoxy PDF

    varactor diode application

    Abstract: No abstract text available
    Text: 6.8-7.9 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1003-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    17-Apr-07 Q1003-BD 100KHz MIL-STD-883 XQ1003-BD XQ1003-BD-000V XQ1003-BD-EV1 XQ1003 varactor diode application PDF

    P1014

    Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


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    P1014-BD 03-Aug-07 XP1006 MIL-STD-883 XP1014 I0005129 XP1014-BD-000V XP1014-BD-EV1 XP1014 P1014 DM6030HK TS3332LD XP1014-BD-000V XP1006 bonding PDF

    tanaka TS3332LD

    Abstract: No abstract text available
    Text: 5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1001-BD Features On-Chip Resonator +5.0 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    17-Apr-07 Q1001-BD 100KHz MIL-STD-883 XQ1001-BD XQ1001-BD-000V XQ1001-BD-EV1 XQ1001 tanaka TS3332LD PDF

    eutectic 157

    Abstract: q1006-bd 15OSC0502 DM6030HK TS3332LD XQ1006-BD XQ1006-BD-000V XQ1006-BD-EV1
    Text: 14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1006-BD On-Chip Prescaler +5.0 dBm Output Power -35 dBc Harmonic Suppression -88 dBc/Hz @ 100KHz Phase Noise 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing


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    17-Apr-07 Q1006-BD 100KHz 110mA MIL-STD-883 XQ1006-BD XQ1006-BD-000V XQ1006-BD-EV1 XQ1006 eutectic 157 q1006-bd 15OSC0502 DM6030HK TS3332LD XQ1006-BD XQ1006-BD-000V XQ1006-BD-EV1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1006-BD On-Chip Prescaler +5.0 dBm Output Power -35 dBc Harmonic Suppression -88 dBc/Hz @ 100KHz Phase Noise 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing


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    17-Apr-07 Q1006-BD 100KHz 110mA MIL-STD-883 XQ1006-BD XQ1006-BD-000V XQ1006-BD-EV1 XQ1006 PDF

    IC 7486

    Abstract: Ic chip 7486 7486 ic diagram DIAGRAM OF IC 7486 Q1004-BD 8OSC0464 DM6030HK TS3332LD XQ1004 XQ1004-BD
    Text: 7.4-8.6 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1004-BD Features On-Chip Resonator +5.0 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


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    17-Apr-07 Q1004-BD 100KHz MIL-STD-883 XQ1004-BD XQ1004-BD-000V XQ1004-BD-EV1 XQ1004 IC 7486 Ic chip 7486 7486 ic diagram DIAGRAM OF IC 7486 Q1004-BD 8OSC0464 DM6030HK TS3332LD XQ1004-BD PDF