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    TANSISTOR NPN Search Results

    TANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    2SK160A-T1B-A Renesas Electronics Corporation Junction Field Effect Tansistors, MM, /Embossed Tape Visit Renesas Electronics Corporation

    TANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    equivalents SC1815

    Abstract: SC1815 SC1815 transistor GSA1015 GSC1815
    Text: CORPORATION GSC1815 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B NPN EPITAXIAL PLANAR TANSISTOR Description The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Complementary to GSA1015 Package Dimensions


    Original     		PDF GSC1815 2004/11/29B GSC1815 GSA1015 equivalents SC1815 SC1815 SC1815 transistor GSA1015

    pnp array

    Abstract: Q62702-C2411 marking code w1s transistor Common collector configuration
    Text: BCR 10PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=10kΩ) Tape loading orientation


    Original     		PDF Q62702-C2411 OT-363 Nov-26-1996 pnp array marking code w1s transistor Common collector configuration

    Marking WUS sot

    Abstract: transistor Common collector configuration Common collector configuration pnp array Q62702-C2495
    Text: BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=47kΩ) Tape loading orientation


    Original     		PDF Q62702-C2495 OT-363 Nov-26-1996 Marking WUS sot transistor Common collector configuration Common collector configuration pnp array

    TANSISTOR

    Abstract: MMBTA05LT1 VCBO-60V
    Text: MMBTA05LT1 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Symbol Rating 2.4


    Original     		PDF MMBTA05LT1 500mA 225mW 100mA 100mA 100MHz 062in 300uS MMBTA05LT1 TANSISTOR VCBO-60V

    c2375

    Abstract: pnp array transistor Common emitter configuration Q62702-C2375 marking WPs
    Text: BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) Tape loading orientation


    Original     		PDF Q62702-C2375 OT-363 Nov-26-1996 c2375 pnp array transistor Common emitter configuration marking WPs

    MMBTA05LT1

    Abstract: TANSISTOR
    Text: MMBTA05LT1 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Symbol Rating 2.4


    Original     		PDF MMBTA05LT1 500mA 225mW 100mA 100mA 100MHz 062in 300uS MMBTA05LT1 TANSISTOR

    Q62702-C2486

    Abstract: transistor digital 47k 22k PNP NPN Marking wfs sot
    Text: BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation


    Original     		PDF Q62702-C2486 OT-363 Nov-26-1996 transistor digital 47k 22k PNP NPN Marking wfs sot

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 10PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit >Two galvanic internal isolated NPN/PNP Transistor in one package »Built in bias resistor (1^=10kf2, R2=10kil) Tape loading orientation


    OCR Scan     		PDF 10kf2, 10kil) Q62702-C2411 OT-363 E35LQS BCR10PN fl23Sb05

    Q62702-C2411

    Abstract: No abstract text available
    Text: SIEMENS BCR 10PN NPN/PNP Silicon Digital Tansistor Array >Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R-|=10k£i, R ^ lO k iî) Tape loading orientation


    OCR Scan     		PDF Q62702-C2411 OT-363

    SOT-363 fg

    Abstract: WFs transistor
    Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2ki2, R2=47k£2) Tape loading orientation


    OCR Scan     		PDF OT-363 Q62702-C2486 BCR08PN SOT-363 fg WFs transistor

    transistor bc 577

    Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2


    OCR Scan     		PDF 47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation


    OCR Scan     		PDF Q62702-C2486 OT-363 as35b05 D15DLSB E35bD5 01EDbS4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5142 TO SHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE ? < ; r M T s i V • ù. i Unit in mm H O R IZO N TA L DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 20.5MAX. HIGH SPEED SW ITCHING APPLICATIONS • • i- High Voltage : VcBO = 1500V


    OCR Scan     		PDF 2SC5142 15/is

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2


    OCR Scan     		PDF 47ki2, Q62702-C2496 OT-363 235LQ5 D12Qb7M BCR48PN D12Qb75

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R-|=22kO, R2=22kfl) C1 Tape loading orientation


    OCR Scan     		PDF 22kfl) Q62702-C2375 OT-363

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SD2498 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV • • High Voltage : V c b o = 1500V Low Saturation Voltage : v C E s a t = 5V (Max-)(Ic = 4A, IB = 0.8A) High Speed : tf=0.4//s(Typ.)


    OCR Scan     		PDF 2SD2498

    2SD2499 equivalent

    Abstract: tansistor 2SD2499 2-16E3A 2SC2482
    Text: TO SHIBA 2SD2499 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V C BO - 1500V • High Speed • _ O -* ' O : tf=0.3/*s (Typ. o r\i 4.0 Collector Metal (Fin) is Fully Covered with Mold Resin.


    OCR Scan     		PDF 2SD2499 2SD2499 equivalent tansistor 2SD2499 2-16E3A 2SC2482

    564 sot363

    Abstract: No abstract text available
    Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation


    OCR Scan     		PDF Q62702-C2375 OT-363 564 sot363

    tansistor

    Abstract: 2SD2498 2-16E3A 2SC2482
    Text: TOSHIBA 2SD2498 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V C BO - 1500V • High Speed • _ ^ Low Saturation Voltage : VC E sat = 5V(Max.)(IC = 4A, IB = 0.8A) 3.0 ±0.3 p-(


    OCR Scan     		PDF 2SD2498 tansistor 2SD2498 2-16E3A 2SC2482

    tansistor

    Abstract: 2SC5048 2-16E3A 2SK528
    Text: TOSHIBA 2SC5048 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5048 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 15.5 ± 0.5 HIGH SPEED SWITCHING APPLICATIONS • • 3.0 ±0.3 wí¡ High Voltage : VCBO- 1500V


    OCR Scan     		PDF 2SC5048 -10ms tansistor 2SC5048 2-16E3A 2SK528

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation


    OCR Scan     		PDF 10kiJ, Q62702-C2495 OT-363

    2SC5148

    Abstract: tansistor 2-16E3A 2SK528
    Text: TOSHIBA 2SC5148 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2 S C 5 1 48 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, U nit in mm COLOR TV High Speed • High Voltage : V C B O - 1500V • Low Saturation Voltage : VCE sat = 5V (M ax.)(IC = 5A,IB = 1.3A)


    OCR Scan     		PDF 2SC5148 2SC5148 tansistor 2-16E3A 2SK528

    2SD2539 equivalent

    Abstract: 2SD2539
    Text: TOSHIBA 2SD2539 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V c b o = 1500V Low Saturation Voltage .15.5 + 0.5 . 03.6± 0.3 3.0+ 0.3 : v C E s a t = s v (M a x ’) ( I c = 5 A , I b = 1 -0 A )


    OCR Scan     		PDF 2SD2539 2SD2539 equivalent 2SD2539

    2sc5129 toshiba L

    Abstract: 2SC5129 tansistor 2-16E3A 2SK528
    Text: 2SC5129 TOSHIBA TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S C 5 1 29 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. 15.5 ± 0 .5 . 0 3 .6 ± 0 .3 HIGH SPEED SWITCHING APPLICATIONS. • • • • Wo High Speed : tf=0.15/*s Typ.


    OCR Scan     		PDF 2SC5129 -1500V 2sc5129 toshiba L 2SC5129 tansistor 2-16E3A 2SK528