equivalents SC1815
Abstract: SC1815 SC1815 transistor GSA1015 GSC1815
Text: CORPORATION GSC1815 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B NPN EPITAXIAL PLANAR TANSISTOR Description The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Complementary to GSA1015 Package Dimensions
|
Original
|
GSC1815
2004/11/29B
GSC1815
GSA1015
equivalents SC1815
SC1815
SC1815 transistor
GSA1015
|
PDF
|
pnp array
Abstract: Q62702-C2411 marking code w1s transistor Common collector configuration
Text: BCR 10PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=10kΩ) Tape loading orientation
|
Original
|
Q62702-C2411
OT-363
Nov-26-1996
pnp array
marking code w1s
transistor Common collector configuration
|
PDF
|
Marking WUS sot
Abstract: transistor Common collector configuration Common collector configuration pnp array Q62702-C2495
Text: BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=47kΩ) Tape loading orientation
|
Original
|
Q62702-C2495
OT-363
Nov-26-1996
Marking WUS sot
transistor Common collector configuration
Common collector configuration
pnp array
|
PDF
|
TANSISTOR
Abstract: MMBTA05LT1 VCBO-60V
Text: MMBTA05LT1 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Symbol Rating 2.4
|
Original
|
MMBTA05LT1
500mA
225mW
100mA
100mA
100MHz
062in
300uS
MMBTA05LT1
TANSISTOR
VCBO-60V
|
PDF
|
c2375
Abstract: pnp array transistor Common emitter configuration Q62702-C2375 marking WPs
Text: BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) Tape loading orientation
|
Original
|
Q62702-C2375
OT-363
Nov-26-1996
c2375
pnp array
transistor Common emitter configuration
marking WPs
|
PDF
|
MMBTA05LT1
Abstract: TANSISTOR
Text: MMBTA05LT1 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Symbol Rating 2.4
|
Original
|
MMBTA05LT1
500mA
225mW
100mA
100mA
100MHz
062in
300uS
MMBTA05LT1
TANSISTOR
|
PDF
|
Q62702-C2486
Abstract: transistor digital 47k 22k PNP NPN Marking wfs sot
Text: BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation
|
Original
|
Q62702-C2486
OT-363
Nov-26-1996
transistor digital 47k 22k PNP NPN
Marking wfs sot
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 10PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit >Two galvanic internal isolated NPN/PNP Transistor in one package »Built in bias resistor (1^=10kf2, R2=10kil) Tape loading orientation
|
OCR Scan
|
10kf2,
10kil)
Q62702-C2411
OT-363
E35LQS
BCR10PN
fl23Sb05
|
PDF
|
Q62702-C2411
Abstract: No abstract text available
Text: SIEMENS BCR 10PN NPN/PNP Silicon Digital Tansistor Array >Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R-|=10k£i, R ^ lO k iî) Tape loading orientation
|
OCR Scan
|
Q62702-C2411
OT-363
|
PDF
|
SOT-363 fg
Abstract: WFs transistor
Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2ki2, R2=47k£2) Tape loading orientation
|
OCR Scan
|
OT-363
Q62702-C2486
BCR08PN
SOT-363 fg
WFs transistor
|
PDF
|
transistor bc 577
Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2
|
OCR Scan
|
47ki2
Q62702-C2496
OT-363
transistor bc 577
bc 574 transistor
common collector pnp array
transistor marking code wts
transistor Bc 574
47k2
MARKING wts sot363
marking 32 SOT-363
transistor BC 575
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation
|
OCR Scan
|
Q62702-C2486
OT-363
as35b05
D15DLSB
E35bD5
01EDbS4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5142 TO SHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE ? < ; r M T s i V • ù. i Unit in mm H O R IZO N TA L DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 20.5MAX. HIGH SPEED SW ITCHING APPLICATIONS • • i- High Voltage : VcBO = 1500V
|
OCR Scan
|
2SC5142
15/is
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2
|
OCR Scan
|
47ki2,
Q62702-C2496
OT-363
235LQ5
D12Qb7M
BCR48PN
D12Qb75
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R-|=22kO, R2=22kfl) C1 Tape loading orientation
|
OCR Scan
|
22kfl)
Q62702-C2375
OT-363
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SD2498 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV • • High Voltage : V c b o = 1500V Low Saturation Voltage : v C E s a t = 5V (Max-)(Ic = 4A, IB = 0.8A) High Speed : tf=0.4//s(Typ.)
|
OCR Scan
|
2SD2498
|
PDF
|
2SD2499 equivalent
Abstract: tansistor 2SD2499 2-16E3A 2SC2482
Text: TO SHIBA 2SD2499 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V C BO - 1500V • High Speed • _ O -* ' O : tf=0.3/*s (Typ. o r\i 4.0 Collector Metal (Fin) is Fully Covered with Mold Resin.
|
OCR Scan
|
2SD2499
2SD2499 equivalent
tansistor
2SD2499
2-16E3A
2SC2482
|
PDF
|
564 sot363
Abstract: No abstract text available
Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation
|
OCR Scan
|
Q62702-C2375
OT-363
564 sot363
|
PDF
|
tansistor
Abstract: 2SD2498 2-16E3A 2SC2482
Text: TOSHIBA 2SD2498 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V C BO - 1500V • High Speed • _ ^ Low Saturation Voltage : VC E sat = 5V(Max.)(IC = 4A, IB = 0.8A) 3.0 ±0.3 p-(
|
OCR Scan
|
2SD2498
tansistor
2SD2498
2-16E3A
2SC2482
|
PDF
|
tansistor
Abstract: 2SC5048 2-16E3A 2SK528
Text: TOSHIBA 2SC5048 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5048 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 15.5 ± 0.5 HIGH SPEED SWITCHING APPLICATIONS • • 3.0 ±0.3 wí¡ High Voltage : VCBO- 1500V
|
OCR Scan
|
2SC5048
-10ms
tansistor
2SC5048
2-16E3A
2SK528
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation
|
OCR Scan
|
10kiJ,
Q62702-C2495
OT-363
|
PDF
|
2SC5148
Abstract: tansistor 2-16E3A 2SK528
Text: TOSHIBA 2SC5148 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2 S C 5 1 48 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, U nit in mm COLOR TV High Speed • High Voltage : V C B O - 1500V • Low Saturation Voltage : VCE sat = 5V (M ax.)(IC = 5A,IB = 1.3A)
|
OCR Scan
|
2SC5148
2SC5148
tansistor
2-16E3A
2SK528
|
PDF
|
2SD2539 equivalent
Abstract: 2SD2539
Text: TOSHIBA 2SD2539 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V c b o = 1500V Low Saturation Voltage .15.5 + 0.5 . 03.6± 0.3 3.0+ 0.3 : v C E s a t = s v (M a x ’) ( I c = 5 A , I b = 1 -0 A )
|
OCR Scan
|
2SD2539
2SD2539 equivalent
2SD2539
|
PDF
|
2sc5129 toshiba L
Abstract: 2SC5129 tansistor 2-16E3A 2SK528
Text: 2SC5129 TOSHIBA TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S C 5 1 29 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. 15.5 ± 0 .5 . 0 3 .6 ± 0 .3 HIGH SPEED SWITCHING APPLICATIONS. • • • • Wo High Speed : tf=0.15/*s Typ.
|
OCR Scan
|
2SC5129
-1500V
2sc5129 toshiba L
2SC5129
tansistor
2-16E3A
2SK528
|
PDF
|
