transistor N100
Abstract: N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911
Text: N AMER P H I L I PS /D I SC RE T E ObE D • tb53131 Power M OS transistor OOIMSOO BU Z42 5 r - 3 7 -\i May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ42
0014SDb
T-39-11
transistor N100
N100 transistor
K 192 A transistor
Transistor 5331
BUZ42
N100
T0220AB
V103
transistor k 3911
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445 nm DLP
Abstract: NU501 BYV74F M1982 BYV 22 diode
Text: D E VE LO PM EN T DATA BYV74F SERIES This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER P H I L I P S / D I S C R E T E 5SE D • bbS3T31 0G25b41 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES
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BYV74F
OT-199
M0802
bYV74h
52tiS0
T-03-19
M2881
M2882
M3091
445 nm DLP
NU501
M1982
BYV 22 diode
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TB531
Abstract: No abstract text available
Text: 2SE D N AMER P H I L I P S / D I S C R E T E • bbSBTBl 0030335 3 B U K 4 4 5-50 A B U K 445-50B P o w erM O S tra n s is to r G E N E R A L D E S C R IP T IO N N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The device is intended fo r use in
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445-50B
45-50A
TB531
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE HSE D ^ 53^31 DoniB? 4 • BDX66; 66A . BDX66B; 66C T-3S -3I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,
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BDX66;
BDX66B;
BDX67,
BDX67A,
BDX67B
BDX67C.
BDX66
T-33-37
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