fresnel reflector
Abstract: 105WATT
Text: LED Traffic Signal Series 438 Dual Voltage 120VAC-230VAC 200 mm / 300 mm View of blackened lens type signal when off • High efficiencies as a result of the new High Flux Reflector Technology and Central Light Source • No Colour Phantom when fitted with the blackened smoked effect
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120VAC-230VAC
200mm
300mm
fresnel reflector
105WATT
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uPD4632312F9-BE95X-BT3
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
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PD4632312-X
32M-BIT
16-BIT
PD4632312-X
77-pin
I/O15)
uPD4632312F9-BE95X-BT3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
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PD4632312-X
32M-BIT
16-BIT
PD4632312-X
77-pin
I/O15)
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uPD4632312F9-BE95X-BT3
Abstract: uPD4632312-X
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
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PD4632312-X
32M-BIT
16-BIT
PD4632312-X
77-pin
I/O15)
-B85X)
uPD4632312F9-BE95X-BT3
uPD4632312-X
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bussmann semiconductor fuse catalogue
Abstract: bs1362 BUSSMANN SFT Series HKP-HH fuses T2A 250V C520 A/D 1.5A, 125V, 32mm glass fuse IEC-127-4 HTC220M FUSE 3A 125V SMT
Text: Bussmann Table of Contents Fuse Holder Selection Chart 2 Surface Mount Fuses 3 Axial and Radial Leaded Fuses 8 5 x 15mm Fuses 12 5 x 20mm Fuses 18 6.3 x 32mm Fuses 36 Automotive Fuses 46 Miscellaneous Fuses 47 Fuse Clips for 5mm dia. Fuses 51 Fuse Clips for 6.3mm dia. Fuses
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S504-V
S505-V
TDC10
TDC11
TDC17
TDC180
bussmann semiconductor fuse catalogue
bs1362
BUSSMANN SFT Series
HKP-HH
fuses T2A 250V
C520 A/D
1.5A, 125V, 32mm glass fuse
IEC-127-4
HTC220M
FUSE 3A 125V SMT
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bias stability gyro mems
Abstract: No abstract text available
Text: CRS09 Angular Rate Sensor A new design of silicon MEMS gyro combined with high-quality discrete electronics, enabling best-in-class performance for demanding applications. Low noise and outstanding stability make this the sensor of choice for applications where a fibre-optic gyro would have been
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CRS09
CRS09
data3635234
CRS09-00-0100
bias stability gyro mems
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Untitled
Abstract: No abstract text available
Text: 3UHOLPLQDU\#LQIRUPDWLRQ $6:&64359// 6169#97.ð49#,QWHOOLZDWWŒ#ORZ#SRZHU#&026#65$0 HDWXUHV • Easy memory expansion with CE, OE inputs • LVTTL/LVCMOS-compatible, three-state I/O • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA
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44-pin
48-ball
AS7C181026LL)
AS7C251026LL)
AS7C31026LL-100TI
AS7C31026LL-55BC
AS7C31026LL-70BC
AS7C31026LL-100BC
AS7C31026LL-55BI
AS7C31026LL-70BI
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10n 431K varistor
Abstract: 20V-431K 10v 471k tnr 431K-471K tnd10se 221K-621K TND07 TND12V-471KB TND14SE tea 6520
Text: METAL OXIDE VARISTORS TNRTM RoHS Compliant ◆FEATURES surge capability the surge current ratings of TNR V series, by 8/20 µs, are about two times larger than TNR G series . ● Large energy capability (1.5 time larger than TNR G series). ● One rank smaller TNR V has same peak current as TNR G.
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E323623
E65426
LR97864
mm/20
E1006S
10n 431K varistor
20V-431K
10v 471k tnr
431K-471K
tnd10se
221K-621K
TND07
TND12V-471KB
TND14SE
tea 6520
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20e221
Abstract: WP1J 10V471K varistor 472 ns b 10v 471k tnr 47p3 10n 471k TRANSISTOR F10 10N metal oxide varistor 471k 20k tnr g 471k
Text: METAL OXIDE VARISTORS TNR METAL OXIDE VARISTORS TNR CAT. No. E1006S INDEX PRODUCT SEARCH SERIES TABLE PRECAUTIONS AND GUIDELINES GROUP CHART PART NUMBERING SYSTEM TECHNICAL TERMS ON VARISTORS PRODUCTION GUIDE SAFETY STANDARDS TAPING SPECIFICATION PACKAGING
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E1006S
AC110V
TND14V-271K
AC220V
TND14V-471K
20e221
WP1J
10V471K
varistor 472 ns b
10v 471k tnr
47p3
10n 471k
TRANSISTOR F10 10N
metal oxide varistor 471k 20k
tnr g 471k
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NAND Flash Programmer with TSOP-48 adapter
Abstract: INTEL Core i7 860 schematic diagram inverter lcd monitor fujitsu MB506 ULTRA HIGH FREQUENCY PRESCALER fujitsu LVDS vga MB89625R VHDL code simple calculator of lcd display JTag Emulator MB90F497 Millbrook BGA TBA 129-5
Text: Master Product Selector Guide February 2001 Fujitsu Microelectronics, Inc. Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Application Specific ICs ASICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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ER 900
Abstract: TBA 616 datasheet DB 646 TBA 616 Nd103 Yb198 1350nm tba 1175 tba 790 tba 940
Text: I Rare-earth-doped fibers NO has been manufacturing rare-earth-doped fibers for more than ten years. The inventory that we currently have includes more than 70 different types. We offer Erbium, Ytterbium, Neodymium, Thulium, Terbium and Samarium-doped fibers along with co-doped fibers like Erbium-Ytterbium.
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B-3476
ER 900
TBA 616 datasheet
DB 646
TBA 616
Nd103
Yb198
1350nm
tba 1175
tba 790
tba 940
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Untitled
Abstract: No abstract text available
Text: Direction Of Feed miniver Cathode SOT23 Melf &SOD80 Tantalum Cap. Aluminum Cap. Bridge Rectifier Trailer & Leader Specifications — I p k - Em pty Cavities Filled Cavities Em pty C avities A W P mm 8mm 2mm 4mm 4mm 8mm 25mm min. 24 12 12 6 50mm min. 24 12
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100mm)
180mm)
250mm
150mm
400mm
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
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TBA 611
Abstract: TBA 651
Text: Trailer & Leader Tape Specifications Cover Tape A Reel D ia W 8mm 4 " 100mm 12mm 16mm 7" (180mm) 24mm 32mm m ini Reel P 2mm 4mm 4mm 8mm 4mm 8mm 12mm 8mm 12mm 16mm 20mm 16mm 24mm mm C +D Nbr Cavity 25mm min. 24 12 12 6 50mm min. 24 12 8 12 8 6 5 6 4 mm Nbr
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100mm)
180mm)
250mm
150mm
400mm
SOL20
SOL24
TBA 611
TBA 651
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SAS 251
Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Text: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD
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A225D
1310P
1524D
A273D
1818D
A274D
A4100D
A277D
TJAAI80)
A4510D
SAS 251
4580d
tda 2022
Tda 865
TDA 7650
CPA 7660
cmo 765
TAA 2761 A
TCA4510
TAA761A
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74aLS808
Abstract: 74ALS677 74ALS468 SN74AS877 SN74LS630 SM54A NCE 7190 74ls631 SN74LS693 TTL Data Book for Design Engineers
Text: ADVANCED LOW-POWER SCHOTTKY AND ADVANCED SCHOTTKY CIRCUITS FUNCTION DEVICE AS1032 ALS1034 AS1034 Quad 2-Input OR Buffers/ Drivers A VAILABILITY NOW NOW NOW Hex Drivers NOW ALS1035 Hex Buffers with D-C Outputs NOW AS1036 Quad 2-Input NOR Line Driver NOW ALS1240
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ALS1032
AS1032
ALS1034
AS1034
ALS1035
AS1036
ALS1240
ALS1241
ALS1242
ALS1243
74aLS808
74ALS677
74ALS468
SN74AS877
SN74LS630
SM54A
NCE 7190
74ls631
SN74LS693
TTL Data Book for Design Engineers
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Untitled
Abstract: No abstract text available
Text: Trailer & Leader Tape Specifications P O O a o . □ o □ o o o t w _L O t s u e n . f — D i ^ ^ _ 5 — rv E Cover Tape Reel Dia W P 2mm 4mm 4mm 8mm 16mm 4mm 8mm 12mm 8mm 7 12mm 180mm 24mm 16mm 20mm 16mm 32mm 24mm 8mm 4 (100mm) 12mm " " m ini mm A 24
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180mm)
100mm)
250mm
150mm
400mm
25pcs.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM 616BV4002J-12 : 240m A (M ax.)
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KM616BV4002
616BV4002J-12
KM616BV4002J-15
4002J-20:
KM616BV4002J
44-SOJ-400
KM616BV4002
304-bit
0031fc
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KM684002J
Abstract: M68400 KM6164002
Text: KM 6164002/L CM OS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500//A (Max) Operating : KM6164002-20 : 250mA (Max.)
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KM6164002/L
500//A
KM6164002-20
250mA
KM6164002-25
240mA
KM6164002-35
220mA
44-SOJ-400
KM6164002/L
KM684002J
M68400
KM6164002
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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KM616B4002J
Abstract: SRAM 10ns
Text: PRELIMINARY BiCMOS SRAM KM616B4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60 mA (CMOS) : 30mA Operating K M 616B 4002J-10: 280mA(Max.)
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KM616B4002
KM616B4002J-10
280mA
KM616B4002J-12
270mA
KM616B4002J-15
260mA
KM616B4002J
44-SQJ-400
KM616B4002
KM616B4002J
SRAM 10ns
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Untitled
Abstract: No abstract text available
Text: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 m A (Max.) (C M O S ): 10 mA (Max.) Operating KM616V4002A -12 : 240 mA (Max.)
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KM616V4002A
KM616V4002A
KM616V4002AJ
44-SQJ-400
304-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY BiCMOS SRAM KM616B4002 256Kx 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM 616B4002J-10 : 280 mA(Max.)
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KM616B4002
256Kx
616B4002J-10
KM616B4002J-12
KM616B4002J-15
KM616B4002J
44-SOJ-400
KM616B4002
304-bit
KM616B400ddress.
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Untitled
Abstract: No abstract text available
Text: KM6161002 CMOS SRAM ELECTR O NICS 6 4 K x 1 6 B H High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002-15 : 230 mA(Max.)
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KM6161002
KM6161002-15
KM6161002-17
KM6161002-20
KM6161002
576-bit
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