tc 122 25 5
Abstract: tc122 25 9
Text: Fast Recovery Diodes Part Number VRRM V TO-262 TSF05A20-11A TSF05A40-11A TSF05A60-11A IFAV (A) Condition IFSM (A) VFM(V) IRM(mA) Tjmax 25°C (°C) 25°C trr (ns) Case Outline 5 5 5 Tc=122℃ Tc=118℃ Tc=107℃ 80 80 80 0.98 1.25 1.7 0.03 0.03 0.03 150
|
Original
|
O-262
TSF05A20-11A
TSF05A40-11A
TSF05A60-11A
O-263AB
TSF05A20
TSF05A40
TSF05A60
TSU05A60
TSU05B60
tc 122 25 5
tc122 25 9
|
PDF
|
equivalent of TIP122
Abstract: TIP122
Text: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter
|
Original
|
TIP120/121/122
TIP125/126/127
O-220
TIP120
TIP121
TIP122
equivalent of TIP122
|
PDF
|
equivalent of TIP122
Abstract: equivalent transistor tip122 TRANSISTOR tip122 TIP120 TIP121 TIP122
Text: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter
|
Original
|
TIP120/121/122
TIP125/126/127
O-220
TIP120
TIP121
TIP122
equivalent of TIP122
equivalent transistor tip122
TRANSISTOR tip122
TIP120
TIP121
TIP122
|
PDF
|
equivalent of TIP122
Abstract: TIP120
Text: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter
|
Original
|
TIP120/121/122
TIP125/126/127
O-220
TIP120
TIP121
TIP122
equivalent of TIP122
TIP120
|
PDF
|
TIP122 transistor APPLICATION NOTES
Abstract: tip120 to-220 npn darlington TIP121 equivalent of TIP122 TRANSISTOR tip122 TIP120 TIP122T NPN Transistor TO220 VCEO 60V IC 5a
Text: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter
|
Original
|
TIP120/121/122
TIP125/126/127
O-220
TIP120
TIP121
TIP122
TIP122 transistor APPLICATION NOTES
tip120 to-220 npn darlington
TIP121
equivalent of TIP122
TRANSISTOR tip122
TIP120
TIP122T
NPN Transistor TO220 VCEO 60V IC 5a
|
PDF
|
SKKT106B18E
Abstract: 106B1
Text: SKKT 106B18 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1900 V VRRM 1800 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor Modules
|
Original
|
106B18
E63532
SKKT106B18E
106B1
|
PDF
|
semikron skkh 106
Abstract: No abstract text available
Text: SKKH 106/16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor / Diode Modules
|
Original
|
E63532
semikron skkh 106
|
PDF
|
106B12
Abstract: No abstract text available
Text: SKKT 106B12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor Modules
|
Original
|
106B12
E63532
|
PDF
|
106B1
Abstract: 106b16 E
Text: SKKT 106B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor Modules
|
Original
|
106B16
E63532
106B1
106b16 E
|
PDF
|
semikron skkh 106
Abstract: No abstract text available
Text: SKKH 106/12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor / Diode Modules
|
Original
|
E63532
semikron skkh 106
|
PDF
|
tip125
Abstract: No abstract text available
Text: TIP125/126/127 TIP125/126/127 Medium Power Linear Switching Applications • Complementary to TIP120/121/122 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter
|
Original
|
TIP125/126/127
TIP120/121/122
O-220
TIP125
TIP126
TIP127
tip125
|
PDF
|
TIP126
Abstract: tip127 data TIP127 TIP125 TIP120 equivalent
Text: TIP125/126/127 TIP125/126/127 Medium Power Linear Switching Applications • Complementary to TIP120/121/122 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter
|
Original
|
TIP125/126/127
TIP120/121/122
O-220
TIP125
TIP126
TIP127
TIP126
tip127 data
TIP127
TIP125
TIP120 equivalent
|
PDF
|
tip127 application notes
Abstract: TIP120 equivalent TIP127 equivalent TIP125
Text: TIP125/126/127 TIP125/126/127 Medium Power Linear Switching Applications • Complementary to TIP120/121/122 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter
|
Original
|
TIP125/126/127
TIP120/121/122
O-220
TIP125
TIP126
TIP127
tip127 application notes
TIP120 equivalent
TIP127 equivalent
TIP125
|
PDF
|
tt 95 n 12
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 122 N screwing depth for fillister head screw max. 11 M6x15 Z4-1 plug A 2,8 x 0,8 13 K2 G2 K1 17 23 23 15 G1 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 122 N Elektrische Eigenschaften
|
Original
|
M6x15
tt 95 n 12
|
PDF
|
|
tc122 25 8
Abstract: tc122 25 6 tc122 25 6 4 tc122 25 8 4 tc122 25 9 xmxx tc122 20 5 3 tc122 25 tc122 25 6 2 resistor smd code sheet
Text: 120 DATA SHEET ARRAY CHIP RESISTORS YC/TC 122 4Pin/2R 5%, 1% sizes 2 x 0402 Product specification – Sep 16, 2008 V.2 Supersedes Date of Mar. 06, 2003 RoHS compliant Product specification Chip Resistor Surface Mount YC/TC SCOPE ORDERING INFORMATION - GLOBAL PART NUMBER & 12NC
|
Original
|
YC122
TC122
YC/TC122
tc122 25 8
tc122 25 6
tc122 25 6 4
tc122 25 8 4
tc122 25 9
xmxx
tc122 20 5 3
tc122 25
tc122 25 6 2
resistor smd code sheet
|
PDF
|
tc122 25 8
Abstract: tc122 25 6 4 tc122 20 5 3
Text: 120 DATA SHEET ARRAY CHIP RESISTORS YC/TC 122 4Pin/2R 5%, 1% sizes 2 x 0402 Product specification – October 20, 2011 V.3 Supersedes Date of Mar. 06, 2003 RoHS compliant Product specification Chip Resistor Surface Mount YC/TC SERIES SCOPE ORDERING INFORMATION - GLOBAL PART NUMBER & 12NC
|
Original
|
YC122
TC122
YC/TC122
tc122 25 8
tc122 25 6 4
tc122 20 5 3
|
PDF
|
ultrasonic proximity sensor interfacing with microcontroller
Abstract: No abstract text available
Text: PSoC 5LP: CY8C58LP Family Datasheet ® PRELIMINARY Programmable System-on-Chip PSoC General Description With its unique array of configurable blocks, PSoC® 5LP is a true system-level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C58LP family offers a modern method of signal acquisition, signal
|
Original
|
CY8C58LP
ultrasonic proximity sensor interfacing with microcontroller
|
PDF
|
capsense
Abstract: CY8C58LP cy8c5868
Text: PSoC 5LP: CY8C58LP Family Datasheet ® Programmable System-on-Chip PSoC General Description With its unique array of configurable blocks, PSoC® 5LP is a true system-level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C58LP family offers a modern method of signal acquisition, signal
|
Original
|
CY8C58LP
capsense
cy8c5868
|
PDF
|
IRF120
Abstract: LS 74145 IRF121 IRF122 IRF123 RF122 IRF 5070 IRF N-Channel Power MOSFETs 05071
Text: 7964142 SAMSUNG SEMICONDUCTOR de I 7^4142 INC_98D_ 0 5 0 6 9_ J □ D D S D tii fj" : n -c h a n n e l POWER MOSFETS L> IR F 1 2 0 /1 2 1 /1 2 2 /1 2 3 FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
|
OCR Scan
|
IRF120/121/122/123
IRF120
IRF121
RF122
IRF123
IRF120
IRF122
LS 74145
IRF 5070
IRF N-Channel Power MOSFETs
05071
|
PDF
|
21H3600
Abstract: No abstract text available
Text: 5STP 21H4200 5STP 21H4200 Old part no. TV 989-2100-42 Phase Control Thyristor Properties High operational capability Possibility of serial and parallel connection Applications Controlled rectifiers AC drives Key Parameters V DRM , V RRM = 4 200 I TAVm = 2 192
|
Original
|
21H4200
21H4200
21H3600
1768/138a,
TV/122n-state
TV/122/04a
Jul-11
21H3600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5STP 21H4200 5STP 21H4200 Old part no. TV 989-2100-42 Phase Control Thyristor Properties § High operational capability § Possibility of serial and parallel connection Applications § Controlled rectifiers § AC drives Key Parameters V DRM, V RRM = 4 200
|
Original
|
21H4200
21H4200
21H4000
1768/138a,
TV/122/04
Jul-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CXD8237Q 1/3 IL08 * C-MOS TC(TIME CODE) READER V DD (+5V) GND GND V DD (+5V) GND GND VDD (+5V) VDD (+5V) 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
|
Original
|
CXD8237Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CXD8233Q 1/3 IL08 * C-MOS TC(TIME CODE) GENERATOR GND GND NC VDD (+5V) GND GND VDD (+5V) NC V DD(+5V) GND NC GND GND VDD (+5V) V DD(+5V) GND NC GND GND VDD (+5V) 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62
|
Original
|
CXD8233Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 120 DATA SHEET ARRAY CHIP RESISTORS YC/TC 5%, 1% sizes YC:102/104/122/124/162/164/248/324/158/358 TC: 122/124/164 Product specification – November 14, 2014 V.0 RoHS compliant 2 Product specification Chip Resistor Surface Mount YC/TC SERIES 12 102 to 358
|
Original
|
|
PDF
|