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    Untitled

    Abstract: No abstract text available
    Text: K4S643234E-TC/L CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Low Power 2.5V Revision 1.0 January 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 (Jan. 2001) K4S643234E-TC/L


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    PDF K4S643234E-TC/L 32bit 86-TSOP2-400F

    K4S643234E

    Abstract: No abstract text available
    Text: K4S643234E-TC CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2.5V Commercial Temperature 86-TSOP Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001)


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    PDF K4S643234E-TC 32bit 86-TSOP K4S643234E-80/10 450um 350um K4S643234E

    FPGA XILINX spartan3 pwm generator

    Abstract: DS465 Xilinx counter DS212 LogiCore
    Text: OPB Timer/Counter v1.00b DS465 December 2, 2005 Product Specification Introduction LogiCORE Facts This document describes the specifications for a timer/counter core for the On-Chip Peripheral Bus (OPB). Core Specifics The TC (Timer/Counter) is a 32-bit timer module that


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    PDF DS465 32-bit DS212 FPGA XILINX spartan3 pwm generator Xilinx counter LogiCore

    AR19

    Abstract: K3S6V2000M-TC15 RA12
    Text: K3S6V2000M-TC Synch. MROM 1M x32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Switchable organization 2,097,152 x 16 word mode / 1,048,576 x 32(double word mode) • All inputs are sampled at the rising edge of the system clock


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    PDF K3S6V2000M-TC 33MHz 50MHz 66MHz 86TSOP2 AR19 K3S6V2000M-TC15 RA12

    MT41K128M16

    Abstract: MT41K128M1 TIS87 AC135 MT41K256 MT41K128M 140-RT-T MT41K
    Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C; See SRT


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    PDF MT41K256M8 MT41K128M16 8192-cycle 09005aef847d068f MT41K128M16 MT41K128M1 TIS87 AC135 MT41K256 MT41K128M 140-RT-T MT41K

    MT41K128M16

    Abstract: MT41K512M4
    Text: 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C


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    PDF MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle 09005aef83ed2952 MT41K128M16 MT41K512M4

    DDR3L-1066

    Abstract: tis 84 tis68 DDR3L-800
    Text: Preliminary‡ 1Gb: x4, x8 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


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    PDF MT41K256M4 MT41K128M8 8192-cycle 78-ball 09005aef833b7221 DDR3L-1066 tis 84 tis68 DDR3L-800

    MT41K128M

    Abstract: No abstract text available
    Text: Preliminary‡ 1Gb: x4, x8 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


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    PDF MT41K256M4 MT41K128M8 8192-cycle 7DR3-1333 09005aef833b7221 MT41K128M

    MT41K128M16

    Abstract: No abstract text available
    Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C


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    PDF MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle 09005aef83ed2952 MT41K128M16

    B209

    Abstract: B-209
    Text: Preliminary‡ 1Gb: x4, x8 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks • Selectable BC4 or BL8 on-the-fly OTF • Self refresh mode • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C


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    PDF MT41K256M4 MT41K128M8 8192-cycle 09005aef833b7221 B209 B-209

    MT41K64M16

    Abstract: No abstract text available
    Text: 1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 – 128 Meg x 4 x 8 banks MT41K128M8 – 64 Meg x 8 x 8 banks MT41K64M16 – 32 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C


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    PDF MT41K256M4 MT41K128M8 MT41K64M16 8192-cycle 09005aef833b7221 MT41K64M16

    MT41K128M16

    Abstract: 78-Ball 96-Ball
    Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C


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    PDF MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle 09005aef83ed2952 MT41K128M16 78-Ball 96-Ball

    Untitled

    Abstract: No abstract text available
    Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


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    PDF MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C


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    PDF MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle silicon360 silicon36 andSi360 Si360

    Untitled

    Abstract: No abstract text available
    Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM EDJ4204EFBG – 128 Meg x 4 x 8 banks EDJ4208EFBG – 64 Meg x 8 x 8 banks EDJ4216EFBG – 32 Meg x 16 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


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    PDF EDJ4204EFBG EDJ4208EFBG EDJ4216EFBG 8192-cycle 09005aef8591e091

    MT41K512M8RH-125

    Abstract: 256M16
    Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


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    PDF MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270 MT41K512M8RH-125 256M16

    Untitled

    Abstract: No abstract text available
    Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


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    PDF MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270

    MT41K128M16

    Abstract: MT41K128M1 SAC305 AC175
    Text: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


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    PDF MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle 09005aef83ed2952 MT41K128M16 MT41K128M1 SAC305 AC175

    DDR3L-1866

    Abstract: MT41K512M8RH-125 256M16
    Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


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    PDF MT41K1G4 MT41K512M8 MT41K256M16 8192-cycle 09005aef84780270 DDR3L-1866 MT41K512M8RH-125 256M16

    MT41K128M16

    Abstract: 75110n 96-ball FBGA AC135 TIS95 ac130 sec DDR3L-800 DDR3L-1866 MT41K512M4
    Text: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C


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    PDF MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle 09005aef83ed2952 MT41K128M16 75110n 96-ball FBGA AC135 TIS95 ac130 sec DDR3L-800 DDR3L-1866 MT41K512M4

    MT41K64M16

    Abstract: 22tiH TIS88
    Text: 1Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks MT41K64M16 – 8 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C


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    PDF MT41K256M4 MT41K128M8 MT41K64M16 8192-cycle 78-bal 09005aef833b7221 MT41K64M16 22tiH TIS88

    Untitled

    Abstract: No abstract text available
    Text: in tc J IPKilLDfiSlDIKlMV 8XC51FX CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLERS Commercial/Express *See Table 1 for Proliferation Options High Performance CHMOS EPROM/ROM/CPU 32 Programmable I/O Lines 7 Interrupt Sources


    OCR Scan
    PDF 8XC51FX A/80C51FA/87C51FB/83C51FB/87C51FC/83C51FC 16-Bit 8XC51FX 8XC51FX-L 83C51FA /80C51 87C51FA/83C51FA/80C51 83C51FA/80C51

    V54C33332G2V

    Abstract: No abstract text available
    Text: M O SE L V IT E L IC V54C33332G2V 166/143 MHz 3.3 VOLT ULTRA HIGH PERFORMANCE 1M X 32 SDRAM 2 BANKS X 512Kbit X 32 V54C33332G2V PRELIMINARY -6 -7 -8 -10 Unit 166 143 125 100 MHz Latency 3 3 3 3 clocks Cycle Tim e tc« 6 7 8 10 ns 5.4 5.4 6 7 ns Clock Frequency (tCK)


    OCR Scan
    PDF V54C33332G2V 512Kbit V54C33332G2V 100-pin

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V ITELIC V 54C31732G 2V H IG H P ER FO R M A N C E 166/143 M H z 3.3 VOLT EN HA N CED G R A PHICS 512K X 32 S D R A M 2 BANKS X 256K bit X 32 V54C31732G2V P R E LIM IN A R Y -6 -7 -8 -10 Unit 166 143 125 100 MHz Latency 3 3 3 3 clocks Cycle Tim e tc«


    OCR Scan
    PDF 54C31732G V54C31732G2V V54C31732G2V 100-pin