Untitled
Abstract: No abstract text available
Text: K4S643234E-TC/L CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Low Power 2.5V Revision 1.0 January 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 (Jan. 2001) K4S643234E-TC/L
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K4S643234E-TC/L
32bit
86-TSOP2-400F
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K4S643234E
Abstract: No abstract text available
Text: K4S643234E-TC CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2.5V Commercial Temperature 86-TSOP Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001)
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K4S643234E-TC
32bit
86-TSOP
K4S643234E-80/10
450um
350um
K4S643234E
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FPGA XILINX spartan3 pwm generator
Abstract: DS465 Xilinx counter DS212 LogiCore
Text: OPB Timer/Counter v1.00b DS465 December 2, 2005 Product Specification Introduction LogiCORE Facts This document describes the specifications for a timer/counter core for the On-Chip Peripheral Bus (OPB). Core Specifics The TC (Timer/Counter) is a 32-bit timer module that
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DS465
32-bit
DS212
FPGA XILINX spartan3 pwm generator
Xilinx counter
LogiCore
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AR19
Abstract: K3S6V2000M-TC15 RA12
Text: K3S6V2000M-TC Synch. MROM 1M x32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Switchable organization 2,097,152 x 16 word mode / 1,048,576 x 32(double word mode) • All inputs are sampled at the rising edge of the system clock
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K3S6V2000M-TC
33MHz
50MHz
66MHz
86TSOP2
AR19
K3S6V2000M-TC15
RA12
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MT41K128M16
Abstract: MT41K128M1 TIS87 AC135 MT41K256 MT41K128M 140-RT-T MT41K
Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C; See SRT
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MT41K256M8
MT41K128M16
8192-cycle
09005aef847d068f
MT41K128M16
MT41K128M1
TIS87
AC135
MT41K256
MT41K128M
140-RT-T
MT41K
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MT41K128M16
Abstract: MT41K512M4
Text: 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C
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MT41K512M4
MT41K256M8
MT41K128M16
8192-cycle
09005aef83ed2952
MT41K128M16
MT41K512M4
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DDR3L-1066
Abstract: tis 84 tis68 DDR3L-800
Text: Preliminary‡ 1Gb: x4, x8 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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MT41K256M4
MT41K128M8
8192-cycle
78-ball
09005aef833b7221
DDR3L-1066
tis 84
tis68
DDR3L-800
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MT41K128M
Abstract: No abstract text available
Text: Preliminary‡ 1Gb: x4, x8 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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MT41K256M4
MT41K128M8
8192-cycle
7DR3-1333
09005aef833b7221
MT41K128M
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MT41K128M16
Abstract: No abstract text available
Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C
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MT41K512M4
MT41K256M8
MT41K128M16
8192-cycle
09005aef83ed2952
MT41K128M16
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B209
Abstract: B-209
Text: Preliminary‡ 1Gb: x4, x8 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks • Selectable BC4 or BL8 on-the-fly OTF • Self refresh mode • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C
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MT41K256M4
MT41K128M8
8192-cycle
09005aef833b7221
B209
B-209
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MT41K64M16
Abstract: No abstract text available
Text: 1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 – 128 Meg x 4 x 8 banks MT41K128M8 – 64 Meg x 8 x 8 banks MT41K64M16 – 32 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C
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MT41K256M4
MT41K128M8
MT41K64M16
8192-cycle
09005aef833b7221
MT41K64M16
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MT41K128M16
Abstract: 78-Ball 96-Ball
Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C
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MT41K512M4
MT41K256M8
MT41K128M16
8192-cycle
09005aef83ed2952
MT41K128M16
78-Ball
96-Ball
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Untitled
Abstract: No abstract text available
Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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MT41K1G4
MT41K512M8
MT41K256M16
8192-cycle
09005aef84780270
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C
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MT41K512M4
MT41K256M8
MT41K128M16
8192-cycle
silicon360
silicon36
andSi360
Si360
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Untitled
Abstract: No abstract text available
Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM EDJ4204EFBG – 128 Meg x 4 x 8 banks EDJ4208EFBG – 64 Meg x 8 x 8 banks EDJ4216EFBG – 32 Meg x 16 x 8 banks • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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EDJ4204EFBG
EDJ4208EFBG
EDJ4216EFBG
8192-cycle
09005aef8591e091
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MT41K512M8RH-125
Abstract: 256M16
Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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MT41K1G4
MT41K512M8
MT41K256M16
8192-cycle
09005aef84780270
MT41K512M8RH-125
256M16
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Untitled
Abstract: No abstract text available
Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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MT41K1G4
MT41K512M8
MT41K256M16
8192-cycle
09005aef84780270
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MT41K128M16
Abstract: MT41K128M1 SAC305 AC175
Text: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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MT41K512M4
MT41K256M8
MT41K128M16
8192-cycle
09005aef83ed2952
MT41K128M16
MT41K128M1
SAC305
AC175
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DDR3L-1866
Abstract: MT41K512M8RH-125 256M16
Text: 4Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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MT41K1G4
MT41K512M8
MT41K256M16
8192-cycle
09005aef84780270
DDR3L-1866
MT41K512M8RH-125
256M16
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MT41K128M16
Abstract: 75110n 96-ball FBGA AC135 TIS95 ac130 sec DDR3L-800 DDR3L-1866 MT41K512M4
Text: 2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C
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MT41K512M4
MT41K256M8
MT41K128M16
8192-cycle
09005aef83ed2952
MT41K128M16
75110n
96-ball FBGA
AC135
TIS95
ac130 sec
DDR3L-800
DDR3L-1866
MT41K512M4
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MT41K64M16
Abstract: 22tiH TIS88
Text: 1Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks MT41K64M16 – 8 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C
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MT41K256M4
MT41K128M8
MT41K64M16
8192-cycle
78-bal
09005aef833b7221
MT41K64M16
22tiH
TIS88
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Untitled
Abstract: No abstract text available
Text: in tc J IPKilLDfiSlDIKlMV 8XC51FX CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLERS Commercial/Express *See Table 1 for Proliferation Options High Performance CHMOS EPROM/ROM/CPU 32 Programmable I/O Lines 7 Interrupt Sources
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OCR Scan
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8XC51FX
A/80C51FA/87C51FB/83C51FB/87C51FC/83C51FC
16-Bit
8XC51FX
8XC51FX-L
83C51FA
/80C51
87C51FA/83C51FA/80C51
83C51FA/80C51
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V54C33332G2V
Abstract: No abstract text available
Text: M O SE L V IT E L IC V54C33332G2V 166/143 MHz 3.3 VOLT ULTRA HIGH PERFORMANCE 1M X 32 SDRAM 2 BANKS X 512Kbit X 32 V54C33332G2V PRELIMINARY -6 -7 -8 -10 Unit 166 143 125 100 MHz Latency 3 3 3 3 clocks Cycle Tim e tc« 6 7 8 10 ns 5.4 5.4 6 7 ns Clock Frequency (tCK)
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V54C33332G2V
512Kbit
V54C33332G2V
100-pin
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Untitled
Abstract: No abstract text available
Text: M O S E L V ITELIC V 54C31732G 2V H IG H P ER FO R M A N C E 166/143 M H z 3.3 VOLT EN HA N CED G R A PHICS 512K X 32 S D R A M 2 BANKS X 256K bit X 32 V54C31732G2V P R E LIM IN A R Y -6 -7 -8 -10 Unit 166 143 125 100 MHz Latency 3 3 3 3 clocks Cycle Tim e tc«
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54C31732G
V54C31732G2V
V54C31732G2V
100-pin
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