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    TC 4000 Search Results

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    Analog Devices Inc

    Analog Devices Inc LTC4000IUFD-1-PBF

    IC BATT CHG IRON PHOSPHATE 28QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LTC4000IUFD-1-PBF Tube 959 1
    • 1 $11.79
    • 10 $8.172
    • 100 $7.08753
    • 1000 $7.08753
    • 10000 $7.08753
    Buy Now

    Analog Devices Inc LTC4000IGN-PBF

    IC BATT CHG IRON PHOSPHAT 28SSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LTC4000IGN-PBF Tube 300 1
    • 1 $12.39
    • 10 $8.525
    • 100 $6.91551
    • 1000 $6.1
    • 10000 $6.1
    Buy Now

    Analog Devices Inc LTC4000IGN-1-PBF

    IC BATT CHG IRON PHOSPHAT 28SSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LTC4000IGN-1-PBF Tube 269 1
    • 1 $14.2
    • 10 $9.859
    • 100 $8.0498
    • 1000 $7.31252
    • 10000 $7.31252
    Buy Now

    Analog Devices Inc LTC4000EGN-PBF

    IC BATT CHG IRON PHOSPHAT 28SSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LTC4000EGN-PBF Tube 143 1
    • 1 $11.62
    • 10 $7.963
    • 100 $6.43959
    • 1000 $5.6
    • 10000 $5.6
    Buy Now

    Analog Devices Inc LTC4000EGN-1-PBF

    IC BATT CHG IRON PHOSPHAT 28SSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LTC4000EGN-1-PBF Tube 107 1
    • 1 $12.48
    • 10 $8.595
    • 100 $6.97449
    • 1000 $6.16252
    • 10000 $6.16252
    Buy Now

    TC 4000 Datasheets (16)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    TC-40.000MBD-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 40.000MHZ CMOS SMD Original PDF
    TC-40.000MBE-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 40.000MHZ CMOS SMD Original PDF
    TC-40.000MCD-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 40.000MHZ CMOS SMD Original PDF
    TC-40.000MCE-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 40.000MHZ CMOS SMD Original PDF
    TC-40.000MDD-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 40.000MHZ CMOS SMD Original PDF
    TC-40.000MDE-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 40.000MHZ CMOS SMD Original PDF
    TC4000BP
    Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF
    TC4000BP
    RFT CMOS/MOS ICs Scan PDF
    TC4000BP
    Toshiba DUAL 3-INPUT NOR GATE PLUS INVERTER Scan PDF
    TC4000H
    Lite-On Technology SMD, Bidirectional Thyristor Surge Protective Device, 360V, 100A, Silicon Diode Scan PDF
    TC-4.000MBD-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 4.000MHZ CMOS SMD Original PDF
    TC-4.000MBE-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 4.000MHZ CMOS SMD Original PDF
    TC-4.000MCD-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 4.000MHZ CMOS SMD Original PDF
    TC-4.000MCE-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 4.000MHZ CMOS SMD Original PDF
    TC-4.000MDD-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 4.000MHZ CMOS SMD Original PDF
    TC-4.000MDE-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 4.000MHZ CMOS SMD Original PDF

    TC 4000 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Contextual Info: SEMiX151GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 450 A -40 . 175 °C Tc = 25 °C


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    SEMiX151GAL12T4s PDF

    Contextual Info: SEMiX151GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 450 A -40 . 175 °C Tc = 25 °C


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    SEMiX151GAR12T4s PDF

    SEMIX302GAL12T4S

    Contextual Info: SEMiX302GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C Tc = 25°C 356


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    SEMiX302GAL12T4s SEMIX302GAL12T4S PDF

    Contextual Info: SEMiX151GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C Tc = 25°C 189


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    SEMiX151GAR12T4s PDF

    Contextual Info: SEMiX453GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 683 A Tc = 80°C 526 A 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 544 A Tc = 80°C 407 A 1350 A -40 . 175 °C Tc = 25°C 544


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    SEMiX453GAR12T4s PDF

    Contextual Info: SEMiX453GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 683 A Tc = 80°C 526 A 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 544 A Tc = 80°C 407 A 1350 A -40 . 175 °C Tc = 25°C 544


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    SEMiX453GAL12T4s PDF

    Contextual Info: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C Tc = 25°C 356


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    SEMiX302GAR12T4s PDF

    Contextual Info: SEMiX151GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C Tc = 25°C 189


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    SEMiX151GAL12T4s PDF

    200A inverter

    Abstract: diode 300v 200A igbt 300v 200a wechselrichter SII200N06
    Contextual Info: SII200N06 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(50)oC ICRM TC= 50oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter


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    SII200N06 150oC 125oC 000A/us 200A inverter diode 300v 200A igbt 300v 200a wechselrichter SII200N06 PDF

    Contextual Info: SEMiX453GD12Vc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 673 A Tc = 80 °C 513 A 450 A ICnom ICRM SEMiX 33c ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 516 A Tc = 80 °C


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    SEMiX453GD12Vc E63532 PDF

    Contextual Info: SEMiX303GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 466 A Tc = 80°C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 338 A Tc = 80°C 252 A 900 A -40 . 175 °C ICRM = 3xICnom VGES


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    SEMiX303GB12T4s PDF

    Contextual Info: SEMiX101GD12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 159 A Tc = 80 °C 121 A 100 A ICnom ICRM SEMiX 13 ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 121 A Tc = 80 °C 91


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    SEMiX101GD12Vs E63532 PDF

    E63532

    Abstract: SKM400GA12V skm400 UPS sinus circuit
    Contextual Info: SKM400GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 598 A Tc = 80 °C 451 A 400 A ICnom ICRM SEMITRANS 4 ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440 A Tc = 80 °C 329


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    SKM400GA12V E63532 SKM400GA12V skm400 UPS sinus circuit PDF

    SEMIX503GB

    Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


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    SEMiX503GB126HDs SEMIX503GB PDF

    Contextual Info: SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 304 A Tc = 80 °C 229 A 200 A ICnom ICRM SEMITRANS 3 ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A Tc = 80 °C 172


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    SKM200GB12V PDF

    Contextual Info: SKiM909GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 899 A Tc = 70 °C 715 A 900 A ICnom ICRM ICRM = 2xICnom 1800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C 670 A Tc = 70 °C 521 A VGES SKiM 93


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    SKiM909GD066HD PDF

    Contextual Info: SEMiX653GAR176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


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    SEMiX653GAR176HDs PDF

    Contextual Info: SEMiX352GAR128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 377 A Tc = 80°C 268 A 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 297 A Tc = 80°C 204 A ICRM = 2xICnom VGES SEMiX 2s SPT IGBT Modules


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    SEMiX352GAR128Ds PDF

    SEMiX403GD128Dc

    Contextual Info: SEMiX403GD128Dc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 418 A Tc = 80°C 298 A 450 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 342 A Tc = 80°C 235 A ICRM = 2xICnom VGES SEMiX 33c SPT IGBT Modules


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    SEMiX403GD128Dc SEMiX403GD128Dc PDF

    E63532

    Contextual Info: SEMiX553GD128Dc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 533 A Tc = 80°C 379 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 421 A Tc = 80°C 289 A ICRM = 2xICnom VGES SEMiX 33c SPT IGBT Modules


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    SEMiX553GD128Dc E63532 PDF

    E63532

    Abstract: M535
    Contextual Info: SEMiX703GAR126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


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    SEMiX703GAR126HDs E63532 M535 PDF

    E63532

    Contextual Info: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


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    SEMiX653GB176HDs E63532 PDF

    scsoa

    Abstract: diode SHSMG1003 SHSMG1004 SHSMG1009 SHSMG1010 SHSMG1012 SHSMG1015 SHSMG1016 SHSMG1017
    Contextual Info: IGBT HIGH SPEED IGBT DEVICES VCES PART NUMBER CONTINUOU S COLLECTOR CURRENT IC @ Tc=90oC CONTINUOU S COLLECTOR CURRENT IC @ TC=25oC Amps Amps Volts PULSED COLLEC T. CURRE NT TC=25oC 1 ms VCE sat @Ic V A Ciss typ tfi typ 25oC pF ns MAXIMU M PD@ TC=25oC RθJC


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    SHSMG1003 SHSMG1004 SHSMG1026 SHSMG1027 scsoa diode SHSMG1003 SHSMG1004 SHSMG1009 SHSMG1010 SHSMG1012 SHSMG1015 SHSMG1016 SHSMG1017 PDF

    Contextual Info: SKM400GAL12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 598 A Tc = 80 °C 451 A 400 A ICnom ICRM SEMITRANS 3 ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440 A Tc = 80 °C


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    SKM400GAL12V PDF