thyristor k 202 russian
Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Text: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)
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SS15BL
M6x15
M6x10
thyristor k 202 russian
russian diode
kp20a 600v
kp20a
ZP20A
optothyristor
KP300A
KP200A
T143-630 SCR
zp5a
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS ID25 IXFN24N100 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ± 30
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IXFN24N100
250ns
OT-227
E153432
24N100
10-17-08-C
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IXFN24N100
Abstract: No abstract text available
Text: IXFN24N100 HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM
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IXFN24N100
250ns
OT-227
E153432
24N100
10-17-08-C
IXFN24N100
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET ISOPLUS247TM VDSS ID25 IXFR24N100 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 1000V 22A Ω 390mΩ 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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ISOPLUS247TM
IXFR24N100
250ns
ISOPLUS247
E153432
24N100
10-17-08-C
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IXFR24N100
Abstract: ISOPLUS247
Text: IXFR24N100 HiPerFETTM Power MOSFET ISOPLUS247TM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 1000V 22A Ω 390mΩ 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFR24N100
ISOPLUS247TM
250ns
ISOPLUS247
E153432
24N100
10-17-08-C
IXFR24N100
ISOPLUS247
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Untitled
Abstract: No abstract text available
Text: Power MOSFET VDSS ID25 IXTX24N100 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient
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IXTX24N100
PLUS247
24N100
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IXTX24N100
Abstract: PLUS247 J 115 mosfet
Text: Power MOSFET IXTX24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 (IXTX) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous
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IXTX24N100
PLUS247
24N100
10-17-08-C
IXTX24N100
PLUS247
J 115 mosfet
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IXTX24N100
Abstract: PLUS247 24N100
Text: Power MOSFET IXTX24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient
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IXTX24N100
PLUS247
24N100
IXTX24N100
PLUS247
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IXFX24N100
Abstract: IXFK24N100 PLUS247
Text: IXFK24N100 IXFX24N100 HiPerFETTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 1000V 24A Ω 390mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V
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IXFK24N100
IXFX24N100
250ns
O-264
24N100
10-17-08-C
IXFX24N100
IXFK24N100
PLUS247
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFK24N100 IXFX24N100 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 1000V 24A Ω 390mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V
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IXFK24N100
IXFX24N100
250ns
O-264
24N100
10-17-08-C
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TP0604N2
Abstract: TP0602N3 TP0602N2 TP0602 TP0604 p-channel DMOS Switching Silicon Power P-channel Fast Data Book TP0604N3 TP0604WG SOW-20
Text: TP0602 TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 SOW-20* DICE† -20V 2.0Ω -2.0A -2.4V TP0602N2 TP0602N3 — TP0602ND
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TP0602
TP0604
SOW-20*
TP0602N2
TP0602N3
TP0602ND
TP0604N2
TP0604N3
TP0604WG
TP0604ND
TP0604N2
TP0602N3
TP0602N2
TP0602
TP0604
p-channel DMOS
Switching Silicon Power P-channel Fast Data Book
TP0604N3
TP0604WG
SOW-20
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SPB80N03L
Abstract: tc 785 siemens SPP80N03L Q67040-S4735-A3
Text: SPP80N03L SPB80N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPP80N03L 30 V 80 A SPB80N03L RDS on @ VGS 0.008 Ω VGS = 4.5 V
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SPP80N03L
SPB80N03L
P-TO220-3-1
Q67040-S4735-A2
P-TO263-3-2
Q67040-S4735-A3
SPB80N03L
tc 785 siemens
SPP80N03L
Q67040-S4735-A3
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TCA 290
Abstract: tca780 tca 780 tc 785 siemens triac 289 tca 785 application TCA 785 IC Fully Controlled AC Power Controller. Circuit for Two High-Power Thyristors siemens triac max 785
Text: SIEMENS P hase C o n tro l IC T C A 785 Features • • • • • • • • Reliable recognition of zero passage Large application scope May be used as zero point switch LSL compatible Three-phase operation possible 3 ICs Output current 250 mA Large ramp current range
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Q67000-A2321
P-DIP-16
TCA 290
tca780
tca 780
tc 785 siemens
triac 289
tca 785 application
TCA 785 IC
Fully Controlled AC Power Controller. Circuit for Two High-Power Thyristors
siemens triac
max 785
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TCA785
Abstract: tca 780 CI TCA 785 tca780 siemens tca-785 TCA 785 tc 785 siemens siemens lsl TCA 785 IC application tca 780
Text: SIEMENS Phase Control IC TCA 785 Bipolar 1C Features • • • • • • • • Reliable recognition of zero passage Large application scope May be used as zero point switch LSL compatible Three-phase operation possible 3 ICs Output current 250 mA Large ramp current range
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Q67000-A2321
P-DIP-16-1
TCA785
tca 780
CI TCA 785
tca780
siemens tca-785
TCA 785
tc 785 siemens
siemens lsl
TCA 785 IC
application tca 780
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IR thyristor manual
Abstract: 7400
Text: Hinweise für Ihre LiteraturBestellung How to order Literature Folgende Hinweise gelten nur für Bestel lungen innerhalb Deutschlands. The following only applies placed in Germany. to orders Richten Sie bitte Ihre Bestellung an Send your order to Siemens AG
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sich31
B1-H6608
B1-H6608-X-X-7600
B143-H6595-X-X-7600
B143-H
6595-V1-X-7600
B111-H6740
B111-H
6740-X-X-7600
B111-H6740-V1-X-7600
IR thyristor manual
7400
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Untitled
Abstract: No abstract text available
Text: ÖÖD D • ÔE3SbQ5 0015074 ö H S I E 6 88D 15074 D T - 3 W "/ I BUZ 361 SIEMENS AKTIENûESELLSCHAF Main ratings N-Channel Vaa a 800 V Drain-source voltage Continuous drain current /„ = 2 ,9 A Drain-source on-resistance ^DS on 4,5 £2 Description Case
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23SbOS
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transistor mj 4035
Abstract: tc 785 siemens SC160
Text: SIEMENS BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BUZ173 Vbs -200 V b -3.6 A ^DS on Package Ordering Code 1.5 n TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
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BUZ173
O-220
C67078-S1452-A2
transistor mj 4035
tc 785 siemens
SC160
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DIODE S45
Abstract: No abstract text available
Text: ÖÖD D • ÔE3SbQ5 0015074 ö H S I E 6 88D 15074 D BUZ 361 SIEMENS AKTIENûESELLSCHAF Main ratings N-Channel a 800 V Drain-source voltage Vos = 2,9 A Continuous drain current h Drain-source on-resistance ^DS on 4,5 a Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode
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buz22
Abstract: No abstract text available
Text: SIEMENS BUZ 22 SIPMOS Power MOS Transistor VDS = 100 V /D = 34 A = 0.055 Q ^ D S o n • N channel • E nhancem ent mode • A valanche-proof • Package: T O -2 2 0 A B ') Type Ordering code BUZ 22 C 6 7 0 78-S 1 33 3-A 2 Maximum Ratings Parameter Symbol
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7js25
SIL00223
SIL00060
SIL00225
buz22
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SPB80N03L
Abstract: spp60n
Text: SIEMENS SPP80N03L SPB80N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP80N03L Vbs 30 V h 80 A SPB80N03L f l DS on @ VGS 0.008 Q
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SPP80N03L
SPB80N03L
SPB80N03L
P-T0220-3-1
P-T0263-3-2
Q67040-S4735-A2
Q67040-S4735-A3
spp60n
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BSS-229
Abstract: BSS229
Text: SIEMENS SIPMOS Small-Signal Transistor BSS 229 • VDS • /„ • • • • • 250 V 0.07 A ^ D S o n 100 S2 N channel Depletion mode High dynamic resistance Available grouped in VQS(th) Type Ordering Code Tape and Reel Information PinC onfigu ration Marking Package
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SS229
Q62702-S600
E6296
BSS-229
BSS229
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siemens datenbuch
Abstract: No abstract text available
Text: SIEMENS 1 Erläuterungen der Datenblattwerte Explanation of Data Sheet Parameters Symbole, Begriffe, Normen 1 Symbole und Begriffe der verwendeten Größen Symbols, Terms, Standards Symbols and Terms of Magnitudes Used Symbole Symbols Begriffe Terms A Anode
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TP0602N3
Abstract: TR0602 TP0604N2
Text: ^Supertex inc. TP0602 T P 06 04 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package B V oss / R d S ON B V dgs (m ax) (min) (max) TO-39 TO-92 SOW-20* DICE* -20V 2.0£2 -2.0A -2.4V TP0602N2 TP0602N3 —
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TP0602
TP0602N2
TP0604N2
TP0602N3
TP0604N3
SOW-20*
TP0604W
TP0602ND
TP0604ND
TR0602/TP0604
TR0602
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FAG 32 diode
Abstract: FAG 50 diode diode FAG 50 FAG40 irfag42 1000V power MOSFET reliability report G-263
Text: HE 0 I 4055455 GOGTZÖL fl | INTERNATIONAL Data Sheet No. PD-9.575A RECTIFIER INTERNATIONAL RECTIFIER IO R T -3 9 -1 3 REPETITIVE AVALANCHE AND dv/dt RATED IRFAG40 IRFAG4S HEXFET TRANSISTORS N-CHANNEL Product Summary 1000 Volt, 3.5 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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T-39-13
O-204AA
G-269
IRFAG40,
IRFAG42
G-270
FAG 32 diode
FAG 50 diode
diode FAG 50
FAG40
1000V power MOSFET reliability report
G-263
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