B60C 800 Si

Abstract: 0/B60C 800 Si
Contextual Info: 1 I n t e r n a t io n a l R e c t i f i e r G o v e rn m e n t a n d S p a c e P ro d u c ts Paît Number 2 BV[)SS (Volts) RDS(on) (Ohms) Ip • Tc°25° (Amps) Id 9 TC«100" (Amps) Total Dos* Rating Rads (Si) Pd O Tc=25* (Watts) 15 7 15.3 12.7 6.0 24.3

452 diode

Contextual Info: Zero-TC Reference Diodes Part Number ; Microsemi Division Scottsdale 1N4S65A Scottsdale 1N4565A-1 Scottsdale 1N4566 Scottsdale 1N4566-1 Scottsdale 1N4566A Scottsdale 1N4566A-1 Scottsdale 1N4567 Scottsdale 1N4567-1 Scottsdale 1N4567A Scottsdale 1N4567A-1 Scottsdale

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

Contextual Info: Government and Space Products Internationa! XQR Rectifier p *0 Part RDS on bVDSS (V) Number T c=, 2 r c (A) D @ TC = 25°C (W) T , = lOO°C (A) HEXFET Power MOSFETs Fax Case on Demand Outline Number Key SEE Hardened TO-254AA N-Channel 31 19 250 91393 T

tc 9123

Abstract: IC 9122 IRFF9121 IRFF9122 IRFF9120 IRFF9123 9121
Contextual Info: SILICONIX INC IflE I> f Ô254735 D014Ô33 2 U IRFF9120/9121 /9122/9123 « y S ilìc o n ix J M • in c o r p o ra te d P-Channel Enhancement Mode Transistors " T - l 0! - ! 0 ! TQ-205AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS IRFF9120 •d ,Dg r

Contextual Info: PD - 91224D IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard ™ HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 22A QPL Part Number

TO-254

Abstract: 91224D IRHM7360SE JANSR2N7391
Contextual Info: PD - 91224D IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard ™ HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 22A QPL Part Number

IRHM7360SE

Contextual Info: PD - 91224C IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

IRHM7450SE

Abstract: aval
Contextual Info: PD - 91223C IRHM7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation

Contextual Info: PD-91224E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID QPL Part Number

Contextual Info: PD - 91223D IRHM7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET

IRHM7450SE

Abstract: 400V to 12V DC Regulator
Contextual Info: PD - 91223D IRHM7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H

TC5082P

Abstract: 9101p 6129P 9122P 5082P 2058F 9198P TA8460F 6134a 8191F
Contextual Info: Frequency Synthesizer C lassifica tion T y p « No. F un ction Pa ckage T C 5081A P P h ase com p a ra to r T C 5082P /P -L H igh-speed divid er 1/256, 1/1024, 1/2048, 1/4096 T C 9122P H igh-speed pro g ra m m a b le c o u n te r BC D 1/3999 T C 9101P /F P LL fo r M C A /P e rson al radio

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

9137

Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
Contextual Info: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.

USART 8251

Abstract: P8251A pin configuration of 8251 usart D8251A MD8251A MD8251 pin diagram 8251A block diagram 8251A 8251a tc 9123
Contextual Info: 8251A Program m able Communication In terface DISTINCTIVE CHARACTERISTICS G ENERAL DESCRIPTION • Synchronous operation up to 64K baud The AM D 8251A is the enhanced version of the industry sta n d a rd 8251 U n ive rsa l S y n c h ro n o u s /A s y n c h ro n o u s

Contextual Info: International PD'9-1229 [jogRectifier_ IRFP350LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, C0Ss, ^rss Isolated Central Mounting Hole Dynamic dv/dt Rated

semiconductor

Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRFP350LC

Contextual Info: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247

IRFP360LC

Contextual Info: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 0.55 Qg (Max.) (nC) 62 Qgs (nC) 10 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 0.55 Qg (Max.) (nC) 62 Qgs (nC) 10 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole