Untitled
Abstract: No abstract text available
Text: SOA AND LOAD LINES APPLICATION NOTE 22 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX 1.0 MEANING OF SOA GRAPH (800) 546-2739 +50 SOA (Safe-Operating-Area) graphs define the acceptable limits of stresses to which power op amps can be subjected. Figure 1 depicts
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546-APEX
AN22U
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mosfet SOA testing
Abstract: AD534 PA04 PA05 PA12 PA85 soa tester
Text: SOA AND LOAD LINES APPLICATION NOTE 22 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX 1.0 MEANING OF SOA GRAPH +50 SOA (Safe-Operating-Area) graphs define the acceptable limits of stresses to which power op amps can be subjected. Figure 1 depicts
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546-APEX
AN22U
mosfet SOA testing
AD534
PA04
PA05
PA12
PA85
soa tester
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Untitled
Abstract: No abstract text available
Text: L 10 auct i, One. C^ TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE13009 SWITCHMODE Series NPN Silicon Power Transistors Features • VCEO(S11S) 400 V and 300 V • Reverse Bias SOA with Inductive Loads @ Tc = 100°C
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MJE13009
O-220AB
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Untitled
Abstract: No abstract text available
Text: Teccor brand Thyristors 12 Amp Alternistor High Communitation Triac for LED dimmer Application Q6012LH1LED Series RoHS ® Description Q6012LH1LED series is designed to meet low load current characteristics typical in LED lighting applications. By keeping holding current at 8mA maximum, this Triac
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Q6012LH1LED
Q6008LH1LED
O-220AB
O-220L
Q6012LH1LED
Q6012LH1
Q6012LH1LEDTP
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S8016N
Abstract: S2055N S4016N s8025 35 amp scr s60 S4025 S2055N equivalent S1025N S2016N S2025N
Text: D 2 Pak MT2 MT1 G 2 D Pak SCR 16 – 55 Amps 6 General Description The Teccor Electronics line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with
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teccor triac application notes
Abstract: Q6012LH1 Q6012 alternistors Alternistor motor speed M1056 ac motor control with triac Q6012lh1led Triac Heat Sink assembly
Text: Teccor brand Thyristors 12 Amp Alternistor High Communitation Triac for LED dimmer Application Q6012LH1LED Series RoHS Description Q6012LH1LED series is designed to meet low load current characteristics typical in LED lighting applications. By keeping holding current at 8mA maximum, this Triac
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Q6012LH1LED
Q6008LH1LED
O-220AB
Q6012LH1LEDTP
Q6012LH1
O-220
teccor triac application notes
Q6012
alternistors
Alternistor motor speed
M1056
ac motor control with triac
Triac Heat Sink assembly
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S6025
Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
Text: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more
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O-218AC
O-202AB
O-218X
O-220AB
tec20
S6025
S1055M
S8025
S4008
S0525
S4025
SCR S1055m
S8055R
S1070W
S6020
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mje13003 equivalent
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
mje13003 equivalent
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
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2N2222 transistor output curve
Abstract: UTCMJE13003 MJE13003 transistor
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
2N2222 transistor output curve
UTCMJE13003
MJE13003 transistor
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mje13003
Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-126
QW-R204-004
mje13003
2n2222 npn switching transistor
mje13003 equivalent
UTCMJE13003
2N2222 NPN Transistor features
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-126
QW-R204-004
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
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Q6040P
Abstract: Q8025L6 Q4025J6 q8012LH5 alternistor Q4025L6 Q4025P Q6025 Q8040J7 Q2015L6
Text: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-220AB THERMOTAB TO-218AC FASTPAK MT2 TO-218X MT1 G Alternistor Triacs 6 – 40 Amps 4 General Description handling capability. The TO-218X features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated
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O-220AB
O-218AC
O-218X
O-218X
2500VRMS.
Q6040P
Q8025L6
Q4025J6
q8012LH5
alternistor
Q4025L6
Q4025P
Q6025
Q8040J7
Q2015L6
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Untitled
Abstract: No abstract text available
Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER RANSISTORS The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching
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MJE13002
O-126
QW-R204-014
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mje13009 equivalent
Abstract: 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719
Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications
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MJE13009
MJE13009
AN-222:
mje13009 equivalent
2N2222 transistor output curve
2N2222 transistor to drive a relay
on semiconductor AN719
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Untitled
Abstract: No abstract text available
Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching
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MJE13002
O-126
QW-R204-014
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transistor, Ic 1A datasheet, NPN
Abstract: 1.5A 2A coil Driver 2N2222 NPN Transistor features 220V reversing motor control 2N2222 transistor output curve mje13002 TRANSISTOR 2n2222 npn switching transistor 4 npn transistor ic MJE13002 DATA SHEET 220V DC circuits motor control
Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching
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MJE13002
O-126
QW-R204-014
transistor, Ic 1A datasheet, NPN
1.5A 2A coil Driver
2N2222 NPN Transistor features
220V reversing motor control
2N2222 transistor output curve
mje13002 TRANSISTOR
2n2222 npn switching transistor
4 npn transistor ic
MJE13002 DATA SHEET
220V DC circuits motor control
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380 volt 50 hz 50 amp triac
Abstract: triac Q8025NH6 alternistor q6012nh5 Q8025NH6 6 amp 600 volt triac alternistors Q2008NH4 Q2010NH5 Q4008NH4
Text: D 2 Pak MT2 MT1 G 2 D Pak Alternistor Triacs 6 – 25 amps 4 General Description Teccor offers bidirectional D 2Pak alternistors with current ratings from 6 to 25 amperes with voltages from 200 to 1000 volts as part of Teccor's broad line of thyristors. Teccor's alternistor has
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e13009
Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and
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MJE13005*
e13009
E13009 TRANSISTOR equivalent
4000w audio amplifier
JE-I3009
4000w inverter circuit
4000w power amplifier
equivalent of transistor mje13007
mje13009 equivalent
125VDC to 24 VDC regulator circuit
Motorola Bipolar Power Transistor Data
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JE1300
Abstract: JE13005 mje130
Text: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA M JE13005* D esigner’s Data Sheet ‘ M otorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs These de vices are de sig ne d fo r h ig h -v o lta g e , h ig h -s p e e d pow er sw itching
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MJE13005/D
JE13005*
21A-06
O-220AB
JE1300
JE13005
mje130
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MJ10007
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS
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MJ10007'
MJ10007
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