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    TC. 12A MOSFET DRIVERS Search Results

    TC. 12A MOSFET DRIVERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TC. 12A MOSFET DRIVERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDB42AN15A0_F085 N-Channel Power Trench MOSFET June 2013 FDB42AN15A0_F085 N-Channel Power Trench® MOSFET 150V, 35A, 42mΩ D D Features „ Typ rDS on = 30mΩ at VGS = 10V, ID = 12A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A G „ UIS Capability „ RoHS Compliant


    Original     		PDF FDB42AN15A0 O-263

    CHM3055LAPAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAGP CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original     		PDF CHM3055LAPAGP O-252) CHM3055LAPAGP

    GS 069

    Abstract: Chenmko Enterprise
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM21A3PAPT CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


    Original     		PDF CHM21A3PAPT O-252A O-252A) GS 069 Chenmko Enterprise

    TC. 12A MOSFET Drivers

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAPT CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


    Original     		PDF CHM3055LAPAPT O-252A O-252A) TC. 12A MOSFET Drivers

    CHM21A3PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM21A3PAGP CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original     		PDF CHM21A3PAGP O-252) CHM21A3PAGP

    SVD12N65F

    Abstract: No abstract text available
    Text: SVD12N65T/SVD12N65F 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		PDF SVD12N65T/SVD12N65F SVD12N65T O-220-3mperature( O-220-3L O-220F-3L SVD12N65F

    2E12

    Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
    Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGL033R FSGL033R 2E12 FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET

    TA17522

    Abstract: IRFP9240
    Text: IRFP9240 Data Sheet July 1999 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP9240 TA17522 IRFP9240

    IRF9530

    Abstract: IRF9531 IRF9530 mosfet
    Text: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    Original     		PDF IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9530 IRF9531 IRF9530 mosfet

    IRF9530

    Abstract: dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF9530, RF1S9530SM TA17511. IRF9530 dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334

    IRFP9240

    Abstract: TA17522
    Text: IRFP9240 Data Sheet January 2002 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP9240 IRFP9240 TA17522

    IRFP9240

    Abstract: IRFP9
    Text: IRFP9240 Data Sheet July 1999 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP9240 TA17522. IRFP9240 IRFP9

    IRF9130

    Abstract: gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130
    Text: IRF9130 Data Sheet February 1999 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF9130 -100V, -100V IRF9130 gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130

    irfp9240

    Abstract: IRFP9243
    Text: IRFP9240, IRFP9241, IRFP9242, IRFP9243 S E M I C O N D U C T O R -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V These are P-Channel enhancement mode silicon gate


    Original     		PDF IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, TA17522. 199st irfp9240 IRFP9243

    IRF9530 mosfet

    Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified


    Original     		PDF IRF9530, RF1S9530SM IRF95 530SM IRF9530 mosfet IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334

    f3055l

    Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
    Text: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE O-220AB O-251AA RFP3055LE 1e-30 06e-3 f3055l FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE

    Untitled

    Abstract: No abstract text available
    Text: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGL130R FSGL130R

    FSYE13A0D

    Abstract: FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3 2E12 MIL-STD-750 a3 4741 5
    Text: FSYE13A0D, FSYE13A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYE13A0D, FSYE13A0R FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3 2E12 MIL-STD-750 a3 4741 5

    IRF9530 mosfet

    Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
    Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


    Original     		PDF IRF9530, RF1S9530SM TA17511. IRF9530 mosfet IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild

    Untitled

    Abstract: No abstract text available
    Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGL033R

    SEC irf630

    Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
    Text: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high ‹ Dynamic dv/dt Rating speed power switching applications such as switching ‹ Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.


    Original     		PDF IRF630 O-220 IRF630. SEC irf630 IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS

    Untitled

    Abstract: No abstract text available
    Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGL033R FSGL033R

    irfp9240

    Abstract: No abstract text available
    Text: HAJims S IRFP9240, IRFP9241, IRFP9242, IRFP9243 Semiconductor y y -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, -150V RFP9240, irfp9240

    Untitled

    Abstract: No abstract text available
    Text: ¡lì h a r r is U U F S S 13A 0 D , FSS1 S E M I C O N D U C T O R 12A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 12A, 100V, rOS ON = 0.1700 The Discrete Products Operation of Harris Semiconductor


    OCR Scan     		PDF MIL-STD-750, MIL-S-19500, 100ms; 500ms;