HY57V641620B
Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.
|
Original
|
PDF
|
HY57V651620B
16Bit
HY57V641620B
864-bit
576x16.
400mil
54pin
HY57V651620B
HY57V651620BLTC-55
HY57V651620BTC-10
HY57V651620BTC-10P
HY57V651620BTC-10S
HY57V651620BTC-55
HY57V651620BTC-6
HY57V651620BTC-7
HY57V651620BTC-75
|
Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/C Series TMP86FS28DFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
|
Original
|
PDF
|
TLCS-870/C
TMP86FS28DFG
|
576X1
Abstract: No abstract text available
Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620B is organized as 4banks of 1,048,576x16.
|
Original
|
PDF
|
HY57V651620B
16Bit
HY57V651620B
864-bit
576x16.
400mil
54pin
576X1
|
Untitled
Abstract: No abstract text available
Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.
|
Original
|
PDF
|
HY57V658020B
HY57V658020B
864-bit
152x8.
400mil
54pin
|
Untitled
Abstract: No abstract text available
Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620B is organized as 4banks of
|
Original
|
PDF
|
HY57V651620B
16Bit
HY57V651620B
864-bit
576x16.
400mil
54pin
|
TMP86FS28DFG
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/C Series TMP86FS28DFG TMP86FS28DFG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
|
Original
|
PDF
|
TLCS-870/C
TMP86FS28DFG
TMP86FS28DFG
|
Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28FG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
|
Original
|
PDF
|
TLCS-870/C
TMP86CS28FG
|
TMP86FS28DFG
Abstract: LQFP80-P-1212-0 TC10 LCD 16*1 0F69H lcd 16*2
Text: 8 ビットマイクロコントローラ TLCS-870/C シリーズ TMP86FS28DFG セミコンダクター社 ● 当社は品質信頼性の向上に努めておりますが、一般に半導体製品は誤作動したり 故障することがあります。当社半導体製品をご使用いただく場合は、半導体製品の
|
Original
|
PDF
|
TLCS-870/C
TMP86FS28DFG
060116DCP1
31/fc
63/fc
127/fc
fc/130
LQFP80-P-1212-0
TMP86FS28DFG
TC10
LCD 16*1
0F69H
lcd 16*2
|
TMP86FS28DFG
Abstract: LQFP80-P-1212-0 TC10
Text: 8 Bit Microcontroller TLCS-870/C Series TMP86FS28DFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
|
Original
|
PDF
|
TLCS-870/C
TMP86FS28DFG
TMP86FS28DFG
LQFP80-P-1212-0
TC10
|
HY57V658020BTC-10S
Abstract: HY57V658020BTC10P HY57V658020B HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BTC-10 HY57V658020BTC-10P HY57V658020BTC-75
Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.
|
Original
|
PDF
|
HY57V658020B
HY57V658020B
864-bit
152x8.
400mil
54pin
HY57V658020BTC-10S
HY57V658020BTC10P
HY57V658020BLTC-10P
HY57V658020BLTC-10S
HY57V658020BLTC-75
HY57V658020BLTC-8
HY57V658020BTC-10
HY57V658020BTC-10P
HY57V658020BTC-75
|
TMP86CS28DFG
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28DFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
|
Original
|
PDF
|
TLCS-870/C
TMP86CS28DFG
TMP86CS28DFG
|
HY57V641620HG
Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.
|
Original
|
PDF
|
HY57V651620B
16Bit
HY57V641620HG
864-bit
576x16.
400mil
54pin
HY57V651620B
HY57V651620BLTC-55
HY57V651620BTC-10
HY57V651620BTC-10P
HY57V651620BTC-10S
HY57V651620BTC-55
HY57V651620BTC-6
HY57V651620BTC-7
HY57V651620BTC-75
|
KM48S8030BT-GL
Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
|
Original
|
PDF
|
PC100
KM48S8030BT-GL
nn5264805tt-b60
KM48S2020CT-GL
0364804CT3B-260
d4564163g5
nt56v1680a0t
D4564841g5
81F641642B-103FN
M5M4V16S30DTP
Siemens 9832
|
Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28DFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
|
Original
|
PDF
|
TLCS-870/C
TMP86CS28DFG
|
|
|
576X1
Abstract: No abstract text available
Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620B is organized as 4banks of 1,048,576x16.
|
Original
|
PDF
|
HY57V651620B
16Bit
HY57V651620B
864-bit
576x16.
400mil
54pin
576X1
|
Untitled
Abstract: No abstract text available
Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of
|
Original
|
PDF
|
HY57V658020B
HY57V658020B
864-bit
152x8.
400mil
54pin
|
Untitled
Abstract: No abstract text available
Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.
|
Original
|
PDF
|
HY57V658020B
HY57V658020B
864-bit
152x8.
400mil
54pin
|
TMP86CS28FG
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28FG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
|
Original
|
PDF
|
TLCS-870/C
TMP86CS28FG
TMP86CS28FG
|
Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/C Series TMP86CS28FG TMP86CS28FG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
|
Original
|
PDF
|
TLCS-870/C
TMP86CS28FG
|
KM416S4030BT-G10
Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
|
Original
|
PDF
|
PC100
KM416S4030BT-G10
KM48S2020CT-GL
81F641642B-103FN
d4564163g5
S9745-M06
M5M4V16S30DTP
gm72v661641ct7j
D4564163G5-A10-9JF
D4516821AG5
D4516821
|
57V651620B
Abstract: No abstract text available
Text: HY57V651620BTC 4Mx16-bit, 4K Ref., 4Banks. 3.3V D E S C R I PT I ON The Hynix H Y 5 7 V 6 4 162 0H G is a 67,1 0 8 ,8 64 -b it CMOS require large m e m o r y dens ity and high band wi dth . Synchronous DRAM, ideally suited for the main memory applications
|
OCR Scan
|
PDF
|
HY57V651620BTC
4Mx16-bit,
57V651620B
|
Untitled
Abstract: No abstract text available
Text: HY57V651620BTC-I 4Mx16-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix H Y 5 7 V 6 5 1 6 2 0 B which require l ow p o w e r is a 6 7 , 1 0 8 , 8 6 4 - b i t consumption and CMOS extended Synchronous temperature DRAM, range. i de al ly sui ted for the HY57V651620B
|
OCR Scan
|
PDF
|
HY57V651620BTC-I
4Mx16-bit,
HY57V651620B
576x16.
HY57V651620B
54pin
|
Untitled
Abstract: No abstract text available
Text: HY57V658020BTC 8Mx8-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.
|
OCR Scan
|
PDF
|
HY57V658020BTC
HY57V658020B
864-bit
152x8.
|
7-segment common anode
Abstract: NE587 bcd to 7 seg 12 volt NE587F NE587N 7 segment common anode 7segment common anode bcd to 16 seg PIN DIAGRAM FOR AV DECODER 7 segment common
Text: NE587 LED Decoder/Driver P ro d u c t S p ecificatio n PIN CONFIGURATIONS DESCRIPTION FEATURES T h e N E 58 7 is a la tc h /d e c o d e r/d riv e r fo r 7 -s e g m e n t c o m m o n a n o d e LE D d is p lays. T h e N E 58 7 h a s a p ro g ra m m a b le
|
OCR Scan
|
PDF
|
NE587
NE587
TC20860S
TC106SOS
7-segment common anode
bcd to 7 seg 12 volt
NE587F
NE587N
7 segment common anode
7segment common anode
bcd to 16 seg
PIN DIAGRAM FOR AV DECODER
7 segment common
|
