Untitled
Abstract: No abstract text available
Text: • S iili* « 131,072 WORDS X 8 BIT STATIC RAM DESCRIPTION The T C 551001PL /FL is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V power supply. Advanced circuit techniques provide both high speed and low power features w ith an operating cu rren t of 5mA/MHz Typ. and
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551001PL
85/100ns.
TC551001
85L/PLâ
TC551001FLâ
85L/FLâ
DIP32
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TC551001PI-10L
Abstract: No abstract text available
Text: 131,072 W O R D S x 8 BIT ST A TIC R A M PRELIMINARY D E S C R IP T IO N The TC551001PI / FI is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V power supply. Advanced circuit techniques
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TC551001PI
100ns.
TC551001PI/FI
TC551001
TC551001FI
DIP32
TC551001PI-10L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 4ÖE LOGIC/MEMORY D ^0=17240 GOEElbS T ' Ï Ï O a S Íj{QX0)1J IH í “ IT0S5Í 11 !!. l j C ^ i ) 1 j (QXö)if I H j = - iK öjL. _ 131,072 WORDS x 8 BIT STATIC RAM PRELIMINARY DESCRIPTION The T C 5 5 1 0 0 1 P I/F I is 1,048,576 bits static random access memory organized as 131,072 words by 8
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100ns.
551001P
1754fl
TC551001
DIP32
DD22171
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Untitled
Abstract: No abstract text available
Text: INTEGRATED OSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554001 FI/FTI-85L TC554001 FI/FTI-10L SILICON GATE CMOS DATA 524,288 WORDS X 8 BIT STATIC RAM DESCRIPTION TENTATIVE DATA The TC554001FI/FTI is a 4,194,304-bit static random access memory SRAM organized as 524,288
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TC554001
FI/FTI-85L
FI/FTI-10L
TC554001FI/FTI
304-bit
10mA/MHz
TC554001FI-L-7_
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